GB1480761A - Chargecoupled area array - Google Patents
Chargecoupled area arrayInfo
- Publication number
- GB1480761A GB1480761A GB33848/74A GB3384874A GB1480761A GB 1480761 A GB1480761 A GB 1480761A GB 33848/74 A GB33848/74 A GB 33848/74A GB 3384874 A GB3384874 A GB 3384874A GB 1480761 A GB1480761 A GB 1480761A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- cells
- register
- transferred
- chargecoupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000003384 imaging method Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
1480761 Imaging devices FAIRCHILD CAMERA & INSTRUMENT CORP 31 July 1974 [27 Aug 1973] 33848/74 Heading H1K An imaging array comprises a plurality of light sensitive cells each associated with a different element of one of a plurality of chargecoupled shift registers in such a way that light generated charge pockets can be transferred from each cell to the associated element. As described the cells (Fig. 1), arranged in columns in a P type silicon substrate, each consist of an ion-implanted N type region 12 bounded on three sides by a P + channel stop region 20, the open side communicating with the corresponding N region 14 of a register element via an N- implanted barrier region 22, the transfer electrode system, disposed over superposed silicon nitride and dioxide layers 26, 24, consisting of a first set of N type polysilicon strips 32 each overlying a column of cells and a set of N-doped strips 32 of an overall polysilicon layer normal to, and oxide isolated from, the first set. A light stop 36 of oxide insulated aluminium overlies each shift register. The array has an input shift register (Fig. 3 not shown) to enable its use with an electronic rather than the optical input, and the plurality of shift registers feed into an output register through which the charge pockets are transferred to an output amplifier.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39111973A | 1973-08-27 | 1973-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1480761A true GB1480761A (en) | 1977-07-27 |
Family
ID=23545328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33848/74A Expired GB1480761A (en) | 1973-08-27 | 1974-07-31 | Chargecoupled area array |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5615592B2 (en) |
| CA (1) | CA1049652A (en) |
| DE (1) | DE2439680A1 (en) |
| FR (1) | FR2242779B1 (en) |
| GB (1) | GB1480761A (en) |
| HK (1) | HK47480A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636143Y2 (en) * | 1976-09-27 | 1981-08-25 | ||
| JPS5642118U (en) * | 1979-09-06 | 1981-04-17 | ||
| JPS6024093U (en) * | 1983-07-26 | 1985-02-19 | 株式会社日立ホームテック | Heating coil for induction cooker |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443330B2 (en) * | 1971-08-26 | 1979-12-19 |
-
1974
- 1974-07-25 CA CA205,678A patent/CA1049652A/en not_active Expired
- 1974-07-31 GB GB33848/74A patent/GB1480761A/en not_active Expired
- 1974-08-19 DE DE2439680A patent/DE2439680A1/en active Pending
- 1974-08-23 FR FR7428985A patent/FR2242779B1/fr not_active Expired
- 1974-08-27 JP JP9829574A patent/JPS5615592B2/ja not_active Expired
-
1980
- 1980-08-28 HK HK474/80A patent/HK47480A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| HK47480A (en) | 1980-09-05 |
| FR2242779A1 (en) | 1975-03-28 |
| JPS5615592B2 (en) | 1981-04-10 |
| FR2242779B1 (en) | 1978-12-01 |
| DE2439680A1 (en) | 1975-03-06 |
| JPS5076995A (en) | 1975-06-24 |
| CA1049652A (en) | 1979-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |