GB1411512A - Image pick-up devices - Google Patents

Image pick-up devices

Info

Publication number
GB1411512A
GB1411512A GB1170473A GB1170473A GB1411512A GB 1411512 A GB1411512 A GB 1411512A GB 1170473 A GB1170473 A GB 1170473A GB 1170473 A GB1170473 A GB 1170473A GB 1411512 A GB1411512 A GB 1411512A
Authority
GB
United Kingdom
Prior art keywords
charge
array
biased
line
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1170473A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1411512A publication Critical patent/GB1411512A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals

Abstract

1411512 Charge transfer image pick-up device WESTERN ELECTRIC CO Inc 12 March 1973 [(17 March 1972 18 Dec 1972] 11704/73 Heading H4F A charge transfer image pick-up device comprises an array of electrodes 10 associated with and insulated from a surface of a charge storage medium, different sets, e.g. rows, of the electrodes being alternately biased, e.g. at A1 and A2, during alternate charge integration periods (e.g. fields) so as to collect charge carries in the medium beneath the biased electrodes resulting from an image incident on the medium and then alternately biased at a faster rate to transfer them into a similar storage array through which they are similarly transferred by alternately applying biases at B1 and B2, the information in each line being sequentially read out from a final line array of electrodes 11 by alternately applying biases at C1 and C2 to obtain a video signal at output 12. The array biased at B1 and B2 and the last line of image-sensing array (biased by A2) are shielded from incident radiation i.e. only the top six lines are exposed. The resulting video signal comprises a line interlaced video signal, the charge collected under the three rows coupled to A1 being collected in one field and the charge under the top three rows coupled to A2 being collected in a second field. The composite array of charge transfer devices may be of the "charge coupled" or "bucket brigade" type, the latter type including regions of fixed charge in the storage medium beneath each electrode and mobile charge integration sites being provided. The above sensing array comprises a twophase device driven by conductive paths A1 and A2, three-phase and four-phase devices are described respectively with reference to Figs. 5 and 4 (not shown) and a line image device with reference to Figs. 6 and 7 (not shown).
GB1170473A 1972-03-17 1973-03-12 Image pick-up devices Expired GB1411512A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23574172A 1972-03-17 1972-03-17
US31610572A 1972-12-18 1972-12-18

Publications (1)

Publication Number Publication Date
GB1411512A true GB1411512A (en) 1975-10-29

Family

ID=26929181

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1170473A Expired GB1411512A (en) 1972-03-17 1973-03-12 Image pick-up devices

Country Status (8)

Country Link
JP (1) JPS5218083B2 (en)
CA (1) CA993100A (en)
DE (1) DE2312952C3 (en)
FR (1) FR2176831B1 (en)
GB (1) GB1411512A (en)
IT (1) IT979787B (en)
NL (1) NL164705C (en)
SE (1) SE379453B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array
JPS5828945B2 (en) * 1976-07-30 1983-06-18 沖電気工業株式会社 Graphic input device
JPS5425114A (en) * 1977-07-27 1979-02-24 Matsushita Electronics Corp Solid pickup unit
JPS55151959A (en) * 1980-04-04 1980-11-26 Teresensarii Systems Inc Photoelectric converter
JPS62200008U (en) * 1986-06-11 1987-12-19

Also Published As

Publication number Publication date
FR2176831A1 (en) 1973-11-02
NL164705C (en) 1981-01-15
CA993100A (en) 1976-07-13
DE2312952B2 (en) 1974-04-25
DE2312952C3 (en) 1974-11-21
DE2312952A1 (en) 1973-09-20
NL164705B (en) 1980-08-15
JPS4914025A (en) 1974-02-07
FR2176831B1 (en) 1976-12-03
JPS5218083B2 (en) 1977-05-19
SE379453B (en) 1975-10-06
IT979787B (en) 1974-09-30
NL7303443A (en) 1973-09-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19930311