GB1375176A - - Google Patents

Info

Publication number
GB1375176A
GB1375176A GB507971A GB507971A GB1375176A GB 1375176 A GB1375176 A GB 1375176A GB 507971 A GB507971 A GB 507971A GB 507971 A GB507971 A GB 507971A GB 1375176 A GB1375176 A GB 1375176A
Authority
GB
United Kingdom
Prior art keywords
layer
charges
stored
sio
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB507971A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to GB507971A priority Critical patent/GB1375176A/en
Priority to IT67541/72A priority patent/IT949161B/en
Priority to FR7205908A priority patent/FR2126277A1/fr
Priority to NL7202320A priority patent/NL7202320A/xx
Priority to DE19722208324 priority patent/DE2208324A1/en
Publication of GB1375176A publication Critical patent/GB1375176A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Non-Volatile Memory (AREA)

Abstract

1375176 Television DEFENCE SECRETARY OF STATE FOR 17 Feb 1972 [22 Feb 1971] 5079/71 Heading H4F [Also in Division H1] A memory device which may be used to generate television signals comprises charge carrier injection and extraction means in a semi-conductor body 1, e.g. in the form of source and drain regions S1 and D1 respectively, and a plurality of capacitive gate electrodes C11-C16 spaced along an insulating layer over the channel between the regions S1 and D1. The insulating layer is capable of storing charges injected therein from the body 1 under the influence of a suitable voltage on any of the gate electrodes C11-C16, and preferably comprises a layer 3 of Si 3 N 4 on a layer 2 of SiO 2 , charges being stored at the layer interface 2a on tunnelling through the layer 2. Non-destructive read-out is achieved by measuring the current which can flow between the regions S1 and D1, this being influenced by the presence of any stored charges. The stored information may be erased by applying a gate potential of such magnitude and polarity as to cause the charge to retunnel back through the layer 2 into the body 1. The Si 3 N 4 layer 3 is preferably limited to a strip along the row of elements illustrated, similar strips being provided for other rows. Each strip 3 of Si 3 N 4 is bounded laterally, as well as beneath, by SiO 2 . A further SiO 2 layer may be provided over the gate electrodes 4, with additional capacitive electrodes (17), Fig. 8 (not shown), being situated thereon overlapping each adjacent pair of electrodes (4). The invention covers various alternative forms of input and output of information for storage. In one case, using optical writing and electrical reading, the body 1 is of Si, and charges are stored at the elements of a 2-dimensional array in response to incident radiation. The radiation may be white or monochromatic light and may represent a scene to be imaged.
GB507971A 1971-02-22 1971-02-22 Expired GB1375176A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB507971A GB1375176A (en) 1971-02-22 1971-02-22
IT67541/72A IT949161B (en) 1971-02-22 1972-02-21 SEMICONDUCTOR DEVICE
FR7205908A FR2126277A1 (en) 1971-02-22 1972-02-22
NL7202320A NL7202320A (en) 1971-02-22 1972-02-22
DE19722208324 DE2208324A1 (en) 1971-02-22 1972-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB507971A GB1375176A (en) 1971-02-22 1971-02-22

Publications (1)

Publication Number Publication Date
GB1375176A true GB1375176A (en) 1974-11-27

Family

ID=9789369

Family Applications (1)

Application Number Title Priority Date Filing Date
GB507971A Expired GB1375176A (en) 1971-02-22 1971-02-22

Country Status (5)

Country Link
DE (1) DE2208324A1 (en)
FR (1) FR2126277A1 (en)
GB (1) GB1375176A (en)
IT (1) IT949161B (en)
NL (1) NL7202320A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788167A2 (en) * 1992-03-24 1997-08-06 Seiko Instruments Inc. Semiconductor radial rays detecting with a reading condenser

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533371B1 (en) * 1982-09-21 1985-12-13 Thomson Csf GRID STRUCTURE FOR AN INTEGRATED CIRCUIT COMPRISING ELEMENTS OF THE GRID-INSULATOR-SEMICONDUCTOR TYPE AND METHOD FOR PRODUCING AN INTEGRATED CIRCUIT USING SUCH A STRUCTURE
JP2642750B2 (en) * 1988-10-20 1997-08-20 キヤノン株式会社 Semiconductor device and signal processing device equipped with the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788167A2 (en) * 1992-03-24 1997-08-06 Seiko Instruments Inc. Semiconductor radial rays detecting with a reading condenser
EP0790650A2 (en) * 1992-03-24 1997-08-20 Seiko Instruments Inc. Semiconductor radiation detector with a reading condenser
EP0788167A3 (en) * 1992-03-24 1998-03-11 Seiko Instruments Inc. Semiconductor radial rays detecting with a reading condenser
EP0790650A3 (en) * 1992-03-24 1998-03-11 Seiko Instruments Inc. Semiconductor radiation detector with a reading condenser

Also Published As

Publication number Publication date
NL7202320A (en) 1972-08-24
IT949161B (en) 1973-06-11
DE2208324A1 (en) 1972-09-07
FR2126277A1 (en) 1972-10-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee