JPS5350990A - Line photo sensor using charge transfer device - Google Patents
Line photo sensor using charge transfer deviceInfo
- Publication number
- JPS5350990A JPS5350990A JP12595376A JP12595376A JPS5350990A JP S5350990 A JPS5350990 A JP S5350990A JP 12595376 A JP12595376 A JP 12595376A JP 12595376 A JP12595376 A JP 12595376A JP S5350990 A JPS5350990 A JP S5350990A
- Authority
- JP
- Japan
- Prior art keywords
- charge transfer
- transfer device
- photo sensor
- line photo
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To simplify electrode structure and improve resolution and color sensitivity characteristics by segmenting a semiconductor substrate of one conductivity type to each individual area, providing impurity diffused layers of opposite conductivity type here in one row to form a multiplicity of optoelectro transducers and providing charge transfer electrodes along this row.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12595376A JPS5350990A (en) | 1976-10-20 | 1976-10-20 | Line photo sensor using charge transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12595376A JPS5350990A (en) | 1976-10-20 | 1976-10-20 | Line photo sensor using charge transfer device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5350990A true JPS5350990A (en) | 1978-05-09 |
Family
ID=14923049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12595376A Pending JPS5350990A (en) | 1976-10-20 | 1976-10-20 | Line photo sensor using charge transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5350990A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5062786A (en) * | 1973-10-03 | 1975-05-28 | ||
JPS5158880A (en) * | 1974-11-18 | 1976-05-22 | Matsushita Electric Ind Co Ltd |
-
1976
- 1976-10-20 JP JP12595376A patent/JPS5350990A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5062786A (en) * | 1973-10-03 | 1975-05-28 | ||
JPS5158880A (en) * | 1974-11-18 | 1976-05-22 | Matsushita Electric Ind Co Ltd |
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