JPS5617084A - Infrared ray detector - Google Patents

Infrared ray detector

Info

Publication number
JPS5617084A
JPS5617084A JP9224779A JP9224779A JPS5617084A JP S5617084 A JPS5617084 A JP S5617084A JP 9224779 A JP9224779 A JP 9224779A JP 9224779 A JP9224779 A JP 9224779A JP S5617084 A JPS5617084 A JP S5617084A
Authority
JP
Japan
Prior art keywords
infrared ray
electrode
detector
ray detector
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9224779A
Other languages
Japanese (ja)
Other versions
JPH0159745B2 (en
Inventor
Hiroshi Takigawa
Shoji Doi
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9224779A priority Critical patent/JPS5617084A/en
Publication of JPS5617084A publication Critical patent/JPS5617084A/en
Publication of JPH0159745B2 publication Critical patent/JPH0159745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H01L27/14881—Infrared CCD or CID imagers of the hybrid type

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To solidify perfectly the infrared ray detector and to enhance the measurement precision of the direction of a target by a method wherein a polyelement type infrared ray detector arranged circularly with plural fan-shaped infrared ray detecting elements and electric charge transfer elements are combined. CONSTITUTION:Plural photovoltaic type fan-shaped infrared ray detecting elements 101-112 are assembled and arranged on a substrate 5 to form a polyelement-type infrared ray detector D, and the generated output is received with an electrode change transfer device S to be formed to a two-phase driven type shift register to output a time series signal. The element S is constituted of change transfer electrodes 201-224, input diodes 301-312, an input gate electrode 21, a temporarily storing electrode 22, a transferring gate electrode 23, etc., and each element 101- 112 of the detector D is connected respectively to corresponding diodes 301-312. An output gate electrode 24, a charge detecting diffusion layer 25, a resetting electrode 26, a charge abolishing drain region 27, etc., are provided in the element S, and the individual signal received with each element in the detector D is converted to the time series signal by the element S to detect the direction of a target.
JP9224779A 1979-07-19 1979-07-19 Infrared ray detector Granted JPS5617084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9224779A JPS5617084A (en) 1979-07-19 1979-07-19 Infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9224779A JPS5617084A (en) 1979-07-19 1979-07-19 Infrared ray detector

Publications (2)

Publication Number Publication Date
JPS5617084A true JPS5617084A (en) 1981-02-18
JPH0159745B2 JPH0159745B2 (en) 1989-12-19

Family

ID=14049089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9224779A Granted JPS5617084A (en) 1979-07-19 1979-07-19 Infrared ray detector

Country Status (1)

Country Link
JP (1) JPS5617084A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50131712A (en) * 1974-04-04 1975-10-18
JPS5184633A (en) * 1975-01-23 1976-07-24 Asahi Optical Co Ltd
JPS52137921A (en) * 1976-05-14 1977-11-17 Toshiba Corp Solid photographing device
JPS5430787A (en) * 1977-08-12 1979-03-07 Fujitsu Ltd Infrared-ray detector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50131712A (en) * 1974-04-04 1975-10-18
JPS5184633A (en) * 1975-01-23 1976-07-24 Asahi Optical Co Ltd
JPS52137921A (en) * 1976-05-14 1977-11-17 Toshiba Corp Solid photographing device
JPS5430787A (en) * 1977-08-12 1979-03-07 Fujitsu Ltd Infrared-ray detector

Also Published As

Publication number Publication date
JPH0159745B2 (en) 1989-12-19

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