JPS5717185A - Photosensor - Google Patents
PhotosensorInfo
- Publication number
- JPS5717185A JPS5717185A JP9147380A JP9147380A JPS5717185A JP S5717185 A JPS5717185 A JP S5717185A JP 9147380 A JP9147380 A JP 9147380A JP 9147380 A JP9147380 A JP 9147380A JP S5717185 A JPS5717185 A JP S5717185A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- germanium
- silicon
- electrode
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To enable high resolution and high-speed signal processing by a photoconductive layer in an amorphous material, which contains hydrogen or a halogen element and a parent substance thereof is silicon or germanium. CONSTITUTION:Each layer of the first doping layers 104 formed on picture element electrodes 102, a photoconductive layer 106 and the second doping layer 107 is constituted by the amorphous material, which contains at least one of hydrogen or the halogen element and the parent substance thereof is at least one of silicon or germanium, and a predetermined N type impurity is further doped to the two doping layers by a fixed quantity. Accordingly, an ohmic contact is ensured excellently by using an N type layer, to which P or/and As is doped, as an electrode at the light receiving surface side or as one part of the electrode because each layer is controlled in N types, and the photosensor having excellent characteristics is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9147380A JPS5717185A (en) | 1980-07-04 | 1980-07-04 | Photosensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9147380A JPS5717185A (en) | 1980-07-04 | 1980-07-04 | Photosensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5717185A true JPS5717185A (en) | 1982-01-28 |
Family
ID=14027355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9147380A Pending JPS5717185A (en) | 1980-07-04 | 1980-07-04 | Photosensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5717185A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5738611U (en) * | 1980-08-15 | 1982-03-02 | ||
JPS57173966A (en) * | 1981-04-20 | 1982-10-26 | Fuji Photo Film Co Ltd | Solid state image pickup device |
-
1980
- 1980-07-04 JP JP9147380A patent/JPS5717185A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5738611U (en) * | 1980-08-15 | 1982-03-02 | ||
JPS5933282Y2 (en) * | 1980-08-15 | 1984-09-17 | 松下電器産業株式会社 | pressure regulating valve |
JPS57173966A (en) * | 1981-04-20 | 1982-10-26 | Fuji Photo Film Co Ltd | Solid state image pickup device |
JPH023552B2 (en) * | 1981-04-20 | 1990-01-24 | Fuji Photo Film Co Ltd |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR870005477A (en) | Semiconductor devices | |
JPS57115556A (en) | Photoconductive material | |
JPS56135980A (en) | Photoelectric conversion element | |
JPS55121685A (en) | Manufacture of photovoltaic device | |
IE812064L (en) | Increasing the band gap in photoresponsive amorphous alloys¹and devices | |
JPS5718372A (en) | Semiconductor photoreceiving element | |
JPS5717185A (en) | Photosensor | |
JPS5739588A (en) | Solid state image pickup device | |
JPS57181176A (en) | High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor | |
JPS5717952A (en) | Electrophotographic receptor | |
JPS56150877A (en) | Photoelectric converter | |
JPS5721876A (en) | Photosensor | |
GB1521341A (en) | Charge-coupled arrangements | |
JPS5739569A (en) | Solid state image pickup device | |
JPS5575264A (en) | Charge transfer element | |
JPS5769778A (en) | Semiconductor device | |
JPS56153782A (en) | Photoconductive thin-film for television camera tube using photosensitizer layer containing amorphous silicon | |
JPS57155784A (en) | Photodiode | |
JPS5548964A (en) | High-voltage-resisting planar semiconductor device | |
EP0388154A3 (en) | Photosemiconductor devices | |
JPS55146967A (en) | Semiconductor ic device | |
Kaneko et al. | Correlation of photoelectric properties of a-Si: H image sensor with compositional distribution of Si3N4 blocking interface | |
JPS577976A (en) | Photo electromotive force element | |
JPS55123177A (en) | Solar cell | |
JPS5630373A (en) | Solid image pickup unit |