CA1020656A - Buried-channel charge-coupled linear imaging device - Google Patents

Buried-channel charge-coupled linear imaging device

Info

Publication number
CA1020656A
CA1020656A CA190,114A CA190114A CA1020656A CA 1020656 A CA1020656 A CA 1020656A CA 190114 A CA190114 A CA 190114A CA 1020656 A CA1020656 A CA 1020656A
Authority
CA
Canada
Prior art keywords
buried
imaging device
linear imaging
channel charge
coupled linear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA190,114A
Other versions
CA190114S (en
Inventor
Choong-Ki Kim
Rudolph H. Dyck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of CA1020656A publication Critical patent/CA1020656A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/7685—Three-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA190,114A 1973-03-22 1974-01-15 Buried-channel charge-coupled linear imaging device Expired CA1020656A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34375973A 1973-03-22 1973-03-22

Publications (1)

Publication Number Publication Date
CA1020656A true CA1020656A (en) 1977-11-08

Family

ID=23347531

Family Applications (1)

Application Number Title Priority Date Filing Date
CA190,114A Expired CA1020656A (en) 1973-03-22 1974-01-15 Buried-channel charge-coupled linear imaging device

Country Status (4)

Country Link
JP (2) JPS49123722A (en)
CA (1) CA1020656A (en)
GB (1) GB1453341A (en)
HK (1) HK6480A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846068B2 (en) * 1978-02-06 1983-10-14 フエアチヤイルド・カメラ・エンド・インスツルメント・コ−ポレ−シヨン charge-coupled device
JPS57190471A (en) * 1981-05-19 1982-11-24 Fuji Photo Film Co Ltd Two-dimensional solid state image pickup device
EP0068786B1 (en) * 1981-06-24 1988-11-09 Plessey Overseas Limited Improvements in or relating to detector arrays
JPS58202685A (en) * 1982-05-21 1983-11-25 Sony Corp Charge transfer device for synthesization of signal
US4490036A (en) * 1982-08-18 1984-12-25 Eastman Kodak Company Image sensor and rangefinder device having background subtraction with paired analog shift registers
GB2262010B (en) * 1991-11-27 1996-01-17 Eev Ltd Charge - coupled device
EP0608130B1 (en) * 1993-01-21 1998-03-25 Sony Corporation Solid-state imaging device with fast clock speed for improved image quality

Also Published As

Publication number Publication date
JPS55171169U (en) 1980-12-08
GB1453341A (en) 1976-10-20
HK6480A (en) 1980-03-07
JPS49123722A (en) 1974-11-27

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19941108