JPS63299268A - Solid-state image sensing device - Google Patents

Solid-state image sensing device

Info

Publication number
JPS63299268A
JPS63299268A JP62133665A JP13366587A JPS63299268A JP S63299268 A JPS63299268 A JP S63299268A JP 62133665 A JP62133665 A JP 62133665A JP 13366587 A JP13366587 A JP 13366587A JP S63299268 A JPS63299268 A JP S63299268A
Authority
JP
Japan
Prior art keywords
pulse
output
channel transistor
cmos inverter
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62133665A
Inventor
Masayuki Matsunaga
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62133665A priority Critical patent/JPS63299268A/en
Publication of JPS63299268A publication Critical patent/JPS63299268A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To reduce the power consumption by a method wherein a CCD and a pulse mixing circuit of CMOS structure to output a three-valued pulse are constituted in an integrated manner by using a high-resistance substrate inside the identical semiconductor substrate.
CONSTITUTION: When a pulse mixing circuit is to be constituted by a CMOS transistor, a p-channel transistor 14 is formed on an n-type semiconductor substrate 12 as it is; an n-channel transistor 15 is formed inside a first p-well 13 or inside a second p-well 16 which has been formed separately. The pulse mixing circuit is constituted by combining the p-channel transistor 14 and the n-channel transistor 15. A substrate 12 used for a CCD and the p-wells 13, 14 are composed of materials of high specific resistance. An output of a second CMOS inverter 18 is used as a lower power supply for a first CMOS inverter 17. The output of a second CMOS inverter 19 is used as a higher power supply of a second CMOS inverter 20. By this setup, one three-valued pulse output is obtained from two two-valued pulse inputs.
COPYRIGHT: (C)1988,JPO&Japio
JP62133665A 1987-05-29 1987-05-29 Solid-state image sensing device Pending JPS63299268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62133665A JPS63299268A (en) 1987-05-29 1987-05-29 Solid-state image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62133665A JPS63299268A (en) 1987-05-29 1987-05-29 Solid-state image sensing device

Publications (1)

Publication Number Publication Date
JPS63299268A true JPS63299268A (en) 1988-12-06

Family

ID=15110056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62133665A Pending JPS63299268A (en) 1987-05-29 1987-05-29 Solid-state image sensing device

Country Status (1)

Country Link
JP (1) JPS63299268A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05176241A (en) * 1991-12-24 1993-07-13 Nec Corp Drive circuit for charge coupled image pickup device
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
US6297070B1 (en) 1996-12-20 2001-10-02 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6320617B1 (en) 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
CN103002233A (en) * 2011-09-14 2013-03-27 株式会社 东芝 Solid-state image sensing device and control method of solid-state image sensing device
JP2014064240A (en) * 2012-09-24 2014-04-10 Canon Inc Imaging device, method for driving the same, and imaging system

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05176241A (en) * 1991-12-24 1993-07-13 Nec Corp Drive circuit for charge coupled image pickup device
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6027955A (en) * 1995-04-13 2000-02-22 Eastman Kodak Company Method of making an active pixel sensor integrated with a pinned photodiode
US6320617B1 (en) 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
US6297070B1 (en) 1996-12-20 2001-10-02 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
CN103002233A (en) * 2011-09-14 2013-03-27 株式会社 东芝 Solid-state image sensing device and control method of solid-state image sensing device
JP2013062733A (en) * 2011-09-14 2013-04-04 Toshiba Corp Solid-state imaging device
US8854521B2 (en) 2011-09-14 2014-10-07 Kabushiki Kaisha Toshiba Solid-state image sensing device and control method of solid-state image sensing device
JP2014064240A (en) * 2012-09-24 2014-04-10 Canon Inc Imaging device, method for driving the same, and imaging system

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