USRE27951E

USRE27951E - Device for converting a physical pattern into an electric signal as a function of time utilizing an analog shift register

Info

Publication number: USRE27951E
Authority: US
Priority date: 1968-04-23
Filing date: 1973-01-05
Publication date: 1974-03-26

Abstract

A DEVICE FOR CONVERTING ENERGY PATTERS IN THE FORM OF LIGHT, PRESSURE, HEAT OR MANGETIC IMAGES INTO AN ELECTRICAL SIGNAL AS A FUNCTION OF TIME WETHER THE NECESSITY FOR A SCANNING BEAM OR A CROSSED BAR READOUT SYSTEM IS ELIMINATED BY CASCADING ELEMENTS WHICH FUNCTION AS BOTH STORAGE AND ENERGY SENSITIVE DEVICES AND BY PROVIDING CIRCUITRY FOR SHIFTING (THE) CHARGES (OF THE ENERGY SENSITIVE STORAGE) STORED IN THE ELEMENTS IN A SINGLE DIRECTION ALONG THE CASCADED ARRAY.

Description

March 26, 1974 TEER ETAL Re. 27,951

DEVICE FOR CONVERTING A PHYSICAL PATTERN INTO AN ELECTRIC swmu, AS A FUNCTION OF mm UTILIZING AN ANALOG SHIFT REGISTER Original Filed April 17, 1969 4 Sheets-Sheet 1 March 26, 1974 E ETAL DEVICE FOR CONVERTING A PHYSICAL PATTERN INTO AN ELECTRIC SIGNAL AS A FUNCTION OF TIME UTILIZING AN ANALOG SHIFT REGISTER Original Filed April 17, 1969 4 Sheets-Sheet 2 n u H u n u u 1.| i d I n a J .m n u M It I I I I II n n n Fl 2 2 2 w +|||3 MW 1 1. I

o i l fig.2

March 26, 1974 K. TEER FI'AL Re. 27,951

DEVICE FOR CQNVERTING A PHYSICAL PATTERN INTO AN ELECTRIC SIGNAL AS A FUNCIIGN OF TIME UTILIZING AN ANALOG SHIFT REGISTER Original Filed April 17, 1969 4 Sheets-Sheet 5 L 1 2 T H T j" I m 1% L J': ----.,.x

m' m? 412 IT In H1 i P, 0

March 26, 1974 7559 ETAL DEVICE FOR CONVERTING A PHYSICAL PATTERN INTO AN ELECTRIC SIGNAL AS A FUNCIION OF TIME UTILIZING AN ANALOG SHIFT REGISTER 4 Sheets-Sheet 4 Original Filed April fig.4a

IIJWI fig.4b

United States Patent 68 Int. Cl. G06g 7/12; H011 11/14 US. Cl. 307-229 12 Claims Matter enclosed in heavy brackets appears in the original patent but forms no part of this reissue specification; matter printed in italics indicates the additions made by reissue.

ABSTRACT OF THE DISCLOSURE A device for converting energy patterns in the form of light, pressure, heat or magnetic images into an electrical signal as a function of time where the necessity for a scanning beam or a crossed bar readout system is eliminated by cascading elements which function as both storage and energy sensitive devices and by providing circuitry for shifting [the] charges [of the energy sensitive storage] stored in the elements in a single direction along the cascaded array.

The invention relates to a device for converting an energy pattern into an electric signal as a function of time, which device comprises at least one row of pickup elements. In the pickup elements, which comprise a semiconductor circuit element, the information of the energy pattern is converted into an electric voltage corresponding thereto in value across a capacitance in a pickup element.

Such a device, for example, for observing a scene optically or in the infrared range is known from the article Charge Storage Lights the Way for Solid-State Image Sensors by G. P. Weckler in Electronics," May 1, 1967, pp. 75-78.

In the said articles pickup elements are described inter alia which contain semiconductor metal oxide (MOS) transistors. A PN-junction of the MOS transistors of the P-channel type brought in the cutoff condition serves as a capacitance. The radiation from the scene to be observed is incident on said capacitance. Dependent upon the intensity of the radiation more or fewer holes and electrons will be created in the boundary layer between the semiconductor P- and N-layers which discharge the capacitance by recombination with the charge provided on the capacitance. By subsequently charging the capacitance again by means of a pulsatory voltage and determining the charge required for that purpose, an indication regarding the intensity of the incident radiation is obtained for a pickup element in the form of an electric signal.

Pickup elements forming a pickup array are also described in the article, in which the capacitances collecting the radiation are constituted by phototransistors, the pulsatory charging voltage being applied through MOS transistors serving as switches. It is proposed to use a system of crossed bars to obtain the electric signal representing the physical information from the pickup elements. The pickup elements are provided between the intersections of two pairs of intersecting parallel conductors. The pickup elements are thus connected in rows and columns by means of the conductors. By applying a switching signal to one of the row conductors and one Re. 27,951 Reissued Mar. 26, 1974 of the column conductors, the electric signal representing the radiation is obtained, through the MOS transistor operating as a switch, from the pickup element arranged between the relative conductors.

The reading out of the said pickup array by means of a system of crossed bars, presents many problems and disadvantages. The intersecting conductors of the system of crossed bars are located close to each other. Therefore, comparatively large stray capacitances are present between the conductors. Since for reading out the pickup elements a high-frequency switching signal is required said stray capacitances give a disturbing crosstalk effect.

Since the requirement holds that only one pickup element of a row or of a column should provide its information, the result is that between the relative pickup element and the conductor, a small resistance must be present and between the other pickup elements and the conductor a large resistance must be present. For that purpose it is stated in the abovementioned article that in each phototransistor operating as a capacitance, a MOS transistor must be provided which serves as a switch. It also holds that a conductor must be very low-ohmic in order that the switching signal be attenuated by the conductor as little as possible. The attenuation and, for example, the voltage drop across the conductor resulting therefrom, may in fact have for its result that a pickup element other than the relative pickup element also provides information. The requirements of the readily conducting material for the conductor for which, for example, aluminum is suitable, presents difficulties in integration methods for the pickup elements constructed with semiconductor material as regards the provision and the required connections.

In addition at least two shift registers are required for supplying the switching signal to the rows and to the columns.

It is the object of the invention to provide a device which does not exhibit the abovementioned drawbacks associated with a system of crossed bars, in which also the influence of stray capacitances occurring is used to advantage. The device according to the invention pro vides an entirely new method of reading out the pickup elements and for that purpose it is characterized in that the capacitance in a pickup element is present between an output electrode and a control electrode of the said semiconductor circuit element. The control electrode is connected, through a voltage source which can produce a voltage having a value as a function of time cutting off the semiconductor circuit element, to a control electrode of another semiconductor circuit element between the output electrode and control electrode of which another capacitance is present. The output electrode of one semiconductor circuit element is coupled to the input electrode of the other semiconductor circuit element [,1 A transport of charge which depends upon the information of the radiation pattern [occurring] occurs in said coupling between one capacitance and the other capacitance as a result of bringing the other semiconductor circuit element in the conductive condition by means of the said voltage source.

In order that the invention may be readily carried into effect, a few examples thereof will now be described in greater detail with reference to the accompanying drawings.

FIG. 1 shows a device according to the invention in which the pickup elements are provided with semiconductor circuit elements constructed as MOS transistors.

FIG. 2 serves to explain the operation of the device shown in FIG. 1 and shows diagrammatically a few diagrams as a function of time.

FIG. 3 shows a device according to the invention provided with several rows of pickup elements.

FIGS. 4a and 4b show an example of an embodiment of the pickup elements in lC-form of a device according to the invention.

Referring now to FIG. 1, of a device according to the invention constructed with a number of pickup elements 1 to n which are collectively denoted by pickup elements B to B the first three pickup elements B B and B are shown in detail. Since the pickup elements B to B are constructed in the same manner, a detailed description is given of the pickup element B only. The pickup element B comprises two [semiconductor] semiconductor circuit elements, denoted as transistors T and T which are further constructed as semiconductive metal oxide (MOS) transistors of the N-channel type. An input or source electrode denoted by S and an arrow indicating the direction of current of MOS transistor T, is connected to an output or drain electrode of MOS transistor T denoted by D, while of MOS transistors T and T, a {mass or] common bias electrode 8 arranged on the substrate of each transistor is connected to a terminal having a negative potential V,,. The terminal which is at the potential V,, forms part, in a manner not shown, of a direct voltage source V another terminal of which is connected to ground. The same will apply to further direct voltage sources to be mentioned in the description. A control or gate electrode G of MOS transistors T and T respectively, is coupled to the drain electrode D through a capacitance denoted as capacitors C and C, respectively.

The pickup elements B to B are connected together by connecting of each pickup element, except for the last pickup element B the source electrode S of MOS transistor T, to the drain electrode D of the MOS transistor T in the succeeding pickup element and by interconnecting the gate electrodes G of the MOS transistors T and T respectively. The source electrode S of the MOS transistor T, in the pickup element B (not shown) may be connected both to a terminal having positive potential and may not be connected further, that is to say, it may be kept floating. The drain electrode D of the MOS transistor T in the pickup element B is connected to the source electrode S of a MOS transistor T the bias electrode B of which is connected to the terminal having a negative potential --V and the gate electrode G is connected to that of MOS transistors T In the pickup elements B B and B13, the potentials at the drain electrodes D of the MOS transistors T and T respectively, are denoted V11, V and V and V V and V respectively.

The interconnected gate electrodes G of MOS transistors T MOS transistors T and MOS transistors T respectively, are connected to ground, through voltage source P and P respectively. Voltage sources P and P produce the clock voltages U and U, as a function of time shown in FIG. 1, which voltages vary between the ground potential denoted by zero and a potential 'value +13. The voltage U; produced by the voltage source P, lags half a period with respect to voltage U which is supplied by the voltage source P The drain electrode D of MOS transistor T is connected to ground through a capacitor C Parallel to the capacitor C is connected a voltage source I, which supplies a clock voltage U as shown through a diode D connected with its cathode to capacitor C The voltage U having a square-wave form as a function of time varies between the potential value +E and a reference value +2E. The terminal of the capacitor C having a potential V is connected to the gate electrode G of a MOS transistor T of the N-channel type, the bias electrode B and the drain electrode D, respectively, being connected to a terminal having a potential -V,, and 4-, respectively. The source electrode S of MOS transistor T is connected to ground through a resistor R and the voltage produced across the resistor R dependent upon the value of potential V appears at an output terminal Z of the device.

Instead of MOS transistors, germanium transistors or silicon transistors may alternatively be used in the device. The said input or source electrode S and output or drain electrode D correspond to an emitter and collector electrode respectively. The said gate electrode [6] G corresponds to a base electrode, which two electrodes may collectively be referred to as control electrodes.

As is known, the construction of the said transistors [T T T T and T as MOS transistors, as compared with normal germanium or silicon transistors for the same drive, presents the advantage of a very much smaller value of the current through the gate electrode G than through the base electrodes of the normal transistors. Of course, normal transistors in the known Darlington arrangement could also be used to obtain the same effect, or the loss of charge corresponding to the said base current could be eliminated by providing charge amplifiers between a few pickup elements. Alternatively, transistors using a field-effect (so-called FETs) are to be considered.

In the embodiment shown the physical pattern which is to be converted into an electric signal influences the voltage across the capacitors [C1 and C2] C and C, and hence the values of the potentials V11, V V12, V and so on, by a physical interaction which is denoted diagrammatically by [arrows in] dot-and-dash lines. As already stated in the above-mentioned Weckler article, the interaction may be photoelectric. The capacitors C and C each denote the essentially parallel capacitance of the PN-junction of the substrate-drain diode in the MOS transistors T and T and that present between the gate electrodes G and the drain electrodes D. In the capacitors C and C shown the stray capacitances are included in the MOS transistors T and T and these are thus used to advantage.

It is also possible to construct capacitors C and C, as separate components having a leak resistance, the value of which depends upon the number of incident photons, for example, the dielectric of a parallel arranged photoresistor. Alternatively a pattern characterized by a pressure distribution or a geometry of unevenesses could act upon the dielectric constructed with piezc oxides, or on, for example, pressure sensitive resistors connected parallel to the capacitor C and C The same applies to a. magnetization pattern, the magnetic field distribution of which influences the value of a resistor which is sensitive to magnetic fields. For that purpose the resistor may consist, for example, of an InSb-mass, in which NiSb-needles occur. The magnetic field influences the position of the NiSb-needles readily conducting electric current in the InSb-mass poorly conducting electric current.

The operation of the device according to the invention shown in FIG. 1 will now be explained with reference to the diagrams shown in FIG. 2. The diagrams shown in FIG. 2 as a function of time give the voltages U U and U supplied by voltage sources P P and P and the potentials V0, V11, V V13, V12, V1 and V occur at the places already shown in FIG. 1. To explain the operation of the device shown in FIG. 1 it is sufiicient to consider a device having only three pickup elements B 1, B and B It is assumed that the source electrode S of MOS transistor T in the pickup element B is kept floating. To obtain a closely reasoned explanation of the cyclic operation of the device a given condition is started from. It will appear that after the period to be explained, the assumed given condition is again reached automatically. The period of the square wave voltage U is shown in FIG. 2 with a few time intervals t to t t to t,;- t to 1:13.

In FIG. 2 an instant t -At is shown shortly after which the potentials shown V V V V V and V all appear to have the value +E, which the potential V is equal to +213. Starting from the instant t at in which a time interval denoted by M for television will be found to lie in the order of a few tens of milliseconds,

the following occurs in the time interval M the value of the voltages U; and U, supplied during the time interval At to the gate electrodes G of MOS transistors T T and T by voltage sources P and P is equal to ground potential, so that said transistors are cutoff during the time interval At due to the higher potential at the source electrodes S. In the time interval At the value of the voltage U, supplied by the voltage source P varies between the potentials +2E and +13. Since the potential V has the value +2E and keeps it during the time interval At when leakage losses are negligible, the diode D will not conduct. In order to show that, for example, for television, the time interval M is relatively long with respect to the recurrence period of the voltage U the voltage U during the time axis denoted by a broken line, shortened relative to that which is shown by a solid line, is shown again with an apparently more rapidly varying square-wave voltage. During the comparatively long time interval At the energy pattern to be converted influences the voltage across the capacitors C and C and causes it to decrease dependent upon the value of the information. Assuming the information in the form of photons to represent a scene to be picked up, the light from the scene varying in brightness from white peak via gray to black, it may be assumed that, for example, the bright white light impinges upon capacitor C of pickup element B and no light impinges upon the capacitor C of the pickup element B while the intermediate grey values are evently distributed between the other capacitors C, and C The result is that during the time interval at the potentials V V V V and V decrease, while the potential [V V for negligible dark current, remains constant. The potential drop during the time interval At is shown linearly in FIG. 2, which, however, is not required. A nonlinear, for example, exponential drop is also readily possible. As will become apparent in the course of the description, the minimum occurring potential value for the maximum value of the brightness of the light should not be smaller than /2E. This value is reached for white peak, by the potential V at the end of the time interval At that is to say at the instant t It is found that the potentials V to V at the end of the time interval At have values L] which, dependent upon the brightness of the ]light, vary from /fiE for white peak to +13 for blac At the instant t the value of the voltage U supplied by the voltage source P steps from ground potential 0 to +E. The result is that this potential step is impressed upon the gate electrodes, G of the MOS transistors T and the terminals of capacitors C connected thereto. As a result of this the potential step having the value E will simultaneously occur, through the capacitors C in the potentials V11, V and V13, so that these reach values at the instant t which lie between +116 and approximately [+3E] +2E. The potential step from 0 to +E. on the gate electrode G of M08 transistor T sets it in the conductive condition if the potential V at [the] its source electrode S is lower than +E, which potential V is in turn determined by the charge condition of C and applied potential U As a result of this the capacitors C and C3 in the pickup elements B and B are connected together until, apart from threshold voltages. the value of the potential at the source electrode S has become equal to that at the gate electrode G of the MOS transistor T The charge required therefor cannot be applied through the gate electrode G but must be supplied from the capacitor C through the drain electrode D and the source electrode S to the capacitor 0,. Starting from substantially the same values of the capacitors C and C, it is found that, as shown in FIG. 2 in the time interval t to t the respective potentials V and V will have to decrease as much.

as the respective potentials v and V will increase.

Since no light has impinged upon the capacitor C in pickup elements B the [change] charge of the capacitor C, has remained constant. The potential step from 0 to +13 at the gate electrode G of MOS transistor T in pickup element B13, Will therefore not cause the same to become conductive.

The result of the potential step in the voltage U at the instant t is that in a pickup element the loss of charge in the capacitors C due to the charging to the potential +E, has been transferred to the capacitor C through the source electrode S and the drain electrode D of the conductive MOS transistor T The potentials V V and V thus obtain a given value relative to the value +2E which difference value corresponds to the brightness of the light which is incident on the pickup elements B B12 and B13- At the instant t the value of the voltages U and U respectively, supplied by the voltage sources P and P respectively, steps back from the value +E, and +2E, respectively, to ground potential and potential value +E, respectively. Simultaneously the voltage U, supplied by the voltage source P steps from ground potential up to the value +E. The potential step in the voltages U and U respectively, show a potential step E downwards and upwards, respectively. In the pickup elements B11, B and B the so far cutofl MOS transistors T, will become conductive instead of the MOS transistors T as it also holds for MOS transistor T As a result of this, the terminal of capacitor C which has a potential V equal to +2E, is connected through MOS transistor T to the terminal of capacitor C in pickup element B which has a potential V Since potential V is lower than +E, which value is impressed upon the gate electrode G of MOS transistor T by the voltage source P with 'voltage U the potential V will increase to the value +E. As already described above, the charge required for that purpose will have to be supplied by capacitor C For a value of capacitor C equal to that of capacitor C in pickup elements B11, the increase of potential V will be equal to the drop of potential V The same phenomenon presents itself between the pickup elements 11, B12 and B the loss of charge in the capacitors C in the pickup elements B and B respectively, being transmitted to the capacitor C in pickup elements B and B This is expressed in FIG. 2 when the potentials V V and V respectively, are compared with the potentials V V and V respectively, during the stated time interval t to t During this time interval t to t the diode D remains cut oil since the value of the voltage U is equal to +E.

The potential V decreased from +2E to approximately "+E, causes through the [transistor] resistor R a smaller current to flow through the MOS transistor T so that relative to ground a voltage occurs at the output terminal Z of the device which is equal to potential V The voltage drop occurring at the output terminal Z, thus represents the brightness of the light which impinges upon the pickup element B At the instant t a potential step occurs in the voltages U U and U after which these voltages obtain the same value as shortly after the instant t The result is the same operation of the device as already described at the instant t A dilference is, however, that in the time interval t to t the potential V. will increase to the value +2E, since this value is impressed by the voltage source P, through the conductive diode D;,.

For illustration FIG. 2 shows a part of the potential variations which correspond to the brightness of the light incident upon the pickup element B as a shaded area. It can simply be seen that during the time interval t to t the information given by the value of potential V,, relative to +'E is transmitted to the potential V and is superimposed thereon relative to the value +2E. During the time interval t to t the total information which is suppiied to the pickup element B during the time interval M is transferred to the capacitor C3 in the pickup elemeat 8;; as a result of which the potential V; varies relative to the value +2E. During the period t to [t the information of the pickup element B is transferred in the pickup element B from the capacitor C having a potential V to capacitor C having a potential V The result is that in the time interval t to t the information given by the pickup element B is transferred to the capacitor C and hence to the Output terminal Z. The information of the pickup element B becomes available at the output terminal Z for further processing in the time interval t to t It has been found that for reading out a device comprising three pickup elements it is necessary and sufficient that the voltages U and U supplied by the voltage sources P and P show three square-wave pulses during the time interval t to t From this it appears that shortly after the instant t the value of the potentials V V V V and V V is equal to +E while that of potential V is equal to +2E. As already described above it is found that after reading out the device, the condition is automatically reached from which was started for the explanation. The result is that the instant t for a cyclic operation of the device corresponds to the instant t At For a device comprising n-pickup elements 8 B [b B to B in which a time interval M in which the light of the scene to be picked up influences the potemiflls 11 11 12. 12 13 ia im m' must be comparatively large relative to the time interval t to t This requirement does not hold for a device in which the information of the physical pattern is written instantaneously without integration in time. An example thereof may be a device in which a pattern characterized by a pressure distribution in an instantaneous manner influences the potential picture of the dielectric constructed with a piezo oxide of capacitors C and C It is obvious from the variation of the potentials V and V that the potential drop under the influence of the light from the scene for white peak cannot be more than /2E. If in fact the light impinges upon both capacitors C and C in the pickup element B with maximum brightness that is to say white peak, the potential V will decrease from +l /2E to +E in the time interval t to t The result is that shortly before the instant t the potential V at the drain electrode D, the potential V at the source electrode 8, and the potential at the gate electrode G of MOS transistor T in the pickup ele ment B all have the value +E. If, however, the potentials V and V should experience a larger drop than AB and reach, for example, the value +%E, the potential V will decrease from +lVsE to +E in the time interval t to t Due to this the potential V can only increase by VsE to the value +/sE. Since for a correct operation of the device it is required that the potential V at the source electrode S increases to the reference value +E, the limit already set results.

The stated limit of /2E for the potential droo does not hold for the case in which in each picku: element the voltage across the capacitor C or C is not influenced by the physical information but is kept constant at the reference value +E, so that the reference value is always available in a pickup element. As a result of this the other capacitor in the pickup element may experience a voltage drop by the value B, so may be substantially [be] discharged without interfering with the correct operation of the device. This may be realized, for example, by screening the dielectric of a capacitor C or C in each pickup element from the physical information or making it insensitive thereto.

When the device is actuated the charging of the capacitors C and C in the pickup elements B B B and B occurs in a simple manner by means of the voltage sources P P and P already described with reference to FIG. 1. The squarewave voltage U supplied by the voltage source P charges the capacitor C [at] to the value +2E via diode D so that the potential V obtains the value +2E. The voltage U; supplied by the voltage source P, then makes the MOS transistor [t T conductive at the value +E so that in the manner already described the potentials V and V obtain the value +5. The voltage U, supplied by the voltage source P; then renders the MOS transistor [t T, conductive at the value +E so that [as a result of the charge distribution between two capacitors,] the potentials V and V obtain the values 0 and E respectively [value +5613]. Simultaneously, the capacitor C is charged again so that the potential V again has the value +2E. In a following period it is achieved that the potentials V and V reach the values 0 and E respectively [value /SE]. After n periods the potentials V and V are equal to 0 and B respectively [2(l2n)E, which value then rapidly increases]. Due [due] to the further charging of the preceding capacitors C and C3 [until] after some time a voltage having substantially a value +E is available across all the capacitors C and C2 present in the pickup elements B B12, B to B This instant corresponds to the instant t -At in FIG. 2. Of course, the charging can be accelerated by increasing the frequency of the voltages U1, U2 and U3.

For analyzing optical, magnetic, or other physically given phenomena which manifest themselves in a onedimensional pattern it is possible, as shown in FIG. 1, to use a single row of pickup elements for converting the physical pattern into an electric signal as a function of time. If itshould be desirable to convert the information in a two-dimensional manner, the device shown in FIG. 3 provides a solution.

FIG. 3 shows a device according to the invention which is provided with m rows having n pickup elements. Since a row of pickup elements B11, B B to [B B was already described with reference to FIG. 1, and since in FIG. 3 the rows are constructed in an equivalent manner, the components of the pickup elements are not shown in detail. Further components already shown in FIG. I are denoted by the same reference numerals in FIG. 3 at least substantially. The MOS transistor T associated with the row in FIG. 1, which for reading a row of pickup elements connects the same to the capacitor C is constructed m-fold in FIG. 3 and is denoted for the TOWS l, 2, 3, m, 1,1 T01, T02, T03 T Instead of the source electrode S of the MOS transistor T in the last pickup element B which in the explana tion of FIG. 1 was assumed to be floating, the corresponding source electrodes S of the MOS transistors T in the last pickup elements B Ban, B to B in FIG. 3 are connected together and connected to a terminal having a potential +V All this is not essential for the invention.

The device shown in FIG. 3, may serve, for example, as a television camera, in which the light from the scene to be picked up is incident on the pickup elements B to B In order to obtain the image signal produced by the camera at the output terminal Z, the voltage U is shown at an input terminal X of the camera which voltage is produced by a voltage source P not shown. In order to obtain the voltages U and U: a combined voltage source (P P is shown which may comprise, for example, a symmetical bistable trigger circuit which is pulsed by the voltage U The voltage U, is also applied to an rt-divider (denoted by n). The output voltage of the n-divider is applied to an m-divider (denoted by m) and to each of the shift register stages K K K to K constituting a shift register. The voltage supplied by the m-divider is applied to the first shift register stage K The outputs of the shift register stages K K K to K are connected to an input of gates (L L (L L "(L L3) to (L,,,, L,,,'), respectively, to a second input of which gates L the [volume] voltage U and to a second input of which gates L the voltage U is also applied. The output of gates L and L, respectively, supplies the voltages U and U respectively, to a row of the pickup elements dependent upon the voltage supplied by the associated shift register stage K.

The voltage supplied by the m-divider has a recurrence period which is equal to [ram] mxn periods of the voltages U U and U and serves as a starting voltage for the first register stage K This latter then supplies a voltage to the gates L and L during n-periods as a result of which the voltages U and U; are transferred to the pickup elements B to B The image signal supplied by the first row of pickup elements B to B appears at the output terminal Z during the n-periods. After the n-periods the voltage supplied by the shift register stage K, varies, so that the gates L and L are closed and the shift register stage K is pulsed so that as a result of the varied voltage supplied by the stage K the gates L and L, open for the second number of nperiods. After the in number of n-periods, the row of the pickup elements B to B has supplied its image signal to the output terminal Z.

In the description with reference to FIGS. 1 and 2 the time interval M is shown which occurs between two successive reading out operations of a row of pickup elements B to B For the device shown in FIG. 3, having m rows of pickup elements, the time interval M in a cyclic operation appears to be equal to (m--l) times the reading out interval of a row of pickup elements. For a television system having 25 images per second built up to 625 lines, the time interval At is approximately equal to 40 ms minus 64 us.

It is obvious that in a simple manner the known interlacing with two frames can be reached by applying the voltage supplied by shift register stages K, to the gates L and L while the gates I and L, are connected to a shift register stage which opens the same after approximately /z[m.n.]m n periods.

It is obvious that for deriving a video signal having the so-called line blanking from the image signal occurring at the output terminal Z, both a part of the information supplied by the rows of pickup elements may be left unused and the shift register may be adapted by incorporating in the stages K, for example, a delay which corresponds to the line blanking time or, for example, the frame blanking time.

The three-fold or two-fold construction of the device shown in FIG. 3 results in a camera suitable for color television by dividing the light coming from the scene in three or two basic colors.

A semiconductor device constructed as a pickup array in which the pickup elements are preferably integrated in one semiconductor body will now be described with reference to FIG. 4. FIG. 4a diagrammatically shows a part of a plan view of an embodiment of such a semiconductor device, while FIG. 4b diagrammatically shows a cross-sectional view taken on the line IVbIVb in FIG. 4a.

The embodiment shown in FIG. 4 comprises a substrate 40 which may be, for example, of an insulating material, the substrate being provided with one or more surface regions of a semiconductor material or, as in the present example, consisting itself of a semiconductor material, for example, P-type silicon. In a manner commonly used in semiconductor technology, for example, by means of a conventional photoresist and diffusion method, surface regions 41 of the opposite conductivity type, for example, having proportions of 64 um. x 64 pm, are provided in a surface region of the substrate 40. These surface regions 41. together with the intermediate regions 42 constitute the semiconductor regions of a number of MOS transistors. These MOS transistors are arranged in series, in which each of the regions 41 shown constitutes the output or drain electrode of a MOS transistor of a series and also the input or source electrode of the succeeding MOS transistor of that series. The intermediate regions 42, width, for example, approximately 6 nn 10 regions between the source and drain electrode of each MOS transistor. The MOS transistors are furthermore provided with gate electrodes 47, proportions approximately 60 m. it 60 m., which are insulated from the semiconductor surface by an insulating layer 43', for example, by a layer of silicon oxide, thickness 0.1 m. The gate electrodes 47 are alternately connected to one of the

conductive tracks

43 and 44 and 45 and 46, respectively. The thickness of the insulating layer below the conductive tracks 43 to 46 preferably is larger than below the gate electrodes 47 (for example, approximately 0.5 m.) to prevent undesired channel formation. Channel interruptors, for example, diffused channel interruptors, may alternatively be used.

The gate electrodes 47 and the metal tracks 43 to 46 consist, for example, of gold, and have a thickness of approximately 250 A. Such gold electrodes are trans parent so that radiation incident on the surface can be absorbed in the semiconductor body and the photosensitivity of the PN-junctions between the surface regions 41 and the surrounding surface region of the substrate 40 may be used. In connection herewith the distance between the surface of the semiconductor body and the said PN-junctions preferably is approximately 1 m. In the operating condition, the said PN-junctions are biased in the [forward] reverse direction to establish a depletion layer around each junction. For that purpose the surrounding surface region is connected to a negative potential, in this case via a connection conductor which is connected to the substrate 40 and is not shown.

The pickup elements of the pickup array are each constituted by two succeeding transistors. The two capacitances C C between which a transport of charge may occur dependent upon the information of the physical pattern, are provided between the gate electrode and the drain electrode of the two MOS transistors of the pickup element as depicted in F1 1. In the present example, said capacitances are constituted by the initial capacitance between the gate electrode and the drain electrode for each MOS transistor, said internal capacitance being increased in that the gate electrodes 47 extend for a considerable part of their surface above the surface regions 41. The photosensors which modify the stored charge in relation to the incident radiation are, as in the Weckler publication, the photodiodes constituted by the reverse-biased n-p junctions formed between each of the N regions 41 and the P substrate 40. In the FIG. 3 embodiment, for instance, in the various rows of pick up elements, the capacitors which are shown connected between gate and drain correspond to the capacilances formed across the insulating layer 43'. The photodiodes would correspond to capacitors connected between each drain and the substrate. For completeness sake, these are shown in dashed lines only for the first row. It will be evident to those skill d in the art that the two capacitors connected to a comon drain are essentially in parallel and thus mutually influence their charge conditions. The said transport of charge can be controlled with control signals which can be applied to the gate electrode 47 of the MOS transistors through the conductive tracks 43 to 46.

What is claimed is:

[1. A device for converting an energy pattern into an electrical signal as a function of time, comprising a plurality of serially connected pickup elements; each of said elements comprising an input terminal, an output terminal, at least two semiconductor switches each having input, output and control terminals, a capacitor connected in parallel with the control and input terminals of each of the semiconductor switches in each pickup element, an energy-sensitive conduction path means connected in parallel with each capacitor for discharging each capacitor at a rate determined by the amount of energy incident thereon, means for connecting the output constitute the channel terminal of a first of the semiconductor switches in each element to an input terminal of a second semiconductor switch in each element, means for connecting the input terminal of the first semiconductor switch in each element to the input terminal of that element, means for connecting the output terminal of the second semicon ductor switch of each element to the output terminal of that element; the device further comprising an external semiconductor switch having input, output and control terminals; means for connecting the output terminal of the external semiconductor switch to the input terminal of a pickup element on an end of the plurality of serially connected pickup elements, an external capacitor connected to the input terminal of the external semiconductor switch, means for providing a first alternating switching voltage to the control terminal of each of the first semiconductor switches in each element, means for providing a second alternating switching voltage to the control terminal of the external semiconductor switch and to the control terminals of each second semiconductor switch in each element, and means for providing a third alternating voltage in phase with said second alternating switching voltage for charging said external capacitor] [2. A device as claimed in claim 1, wherein each of the semiconductor switches in each pickup unit comprises a metal oxide transistor, wherein each of the capacitors in the pickup units each comprise a PN-junction of an associated MOS transistor, and wherein the radiation sensitive conduction path means comprises a photosensitive boundary layer of the MOS transistor] [3. A device as claimed in claim 1, further comprising an additional row of serially connected pickup elements, an additional external semiconductor switch connected to one end of said additional row of pickup units, means for connecting the semiconductor switch to the external capacitor, and means for alternately energizing said first and said second external semiconductor switches] [4. A device as claimed in claim 1, wherein all of the semiconductor switches are integrated into a single integrated semiconductor body] 5. A solid state photosensitive imaging array comprisa plurality of rows having a plurality of transistors, each transistor having first and second electrodes defining the ends of a conduction path and a control electrode; the conduction paths of the transistors of a row being connected in series for forming a signal transmission path terminated at one end at an output terminal;

a capacitor per transistor coupled between the control electrode and one of said first and second electrodes of each transistor;

photoresponsive element per transistor, each element being common to the capacitor at said one electrode of its associated transistor, said element being poled in a direction to discharge said capacitor as a function of photo signals;

two conductors per row, one conductor being connected to the control electrode of every other transistor and the other conductor being connected to the control electrode of the remaining transistors;

a source of clock voltages;

switch means connected between said conductors of each row and said clock source for, when enabled, applying between said conductors clock voltages for serially reading out the contents of a row and concurently recharging the capacitors of a row; and

scan means having an output terminal connected to different one of said switch means for enabling said switch means in sequence for completely reading out and recharging one row and then another one and so on until all rows are read out.

6. The combination as claimed in claim 5, wherein the scan means comprises a shift register having one output per stage, and means connecting the output of each stage of the shift register to the switch of a difierent row of transistors.

7. The combination as claimed in claim 6, and further including means for coupling said clock source to the shift register of the scan means.

8. Imaging semiconductor apparatus comprising:

a semiconductive wafer including a bulk portion of a first type semiconductivity and a plurality of spaced, localized zones of opposite type semiconductivity disposed adjacent and forming a series path along the surface of the wafer;

a dielectric layer disposed said localized zones;

a plurality of localized conductive electrodes disposed over the dielectric layer and registered with said localized zones such that each of said conductive electrodes extends over the space between a pair of said zones and over a portion of one zone of the pair of zones and forms with the latter charge storage means;

means for applying alternating clock voltages between successive ones of said electrodes, said clock voltages being sufficient to produce in the localized zones in the absence of incident photons a reference potential and said clock voltages additionally being such that their successive application to the electrodes is suflicient to cause the advance of any charge if present representing a variation of the reference potential from one zone to the next zone along the series path at each alternation of the voltages;

means for enabling incident photons to impinge upon the semiconductive wafer to cause in response to the photon intensity adjacent the charge storage means localized variations from the reference potential, said localized variations representing signal information corresponding to the local photon intensity; and

detection means for the potential variations coupled to the localized zone at the end of the said series path, whereby upon application of the clock voltages the signal information can be derived from the said detection means in serial fashion.

9. Imaging semiconductor apparatus as set forth in claim 8 wherein the charge storage means are arranged in a row with a single detection means for the row connected to the end of the row, said row being adapted to image and convert to electrical signals a line of incident photons.

10,. Imaging semiconductor apparatus as set forth in claim 9 wherein plural rows of charge storage means are provided each with a single detection means at the end of each row.

11. Imaging semiconductor apparatus as set forth in claim 8 and including means for applying the clock voltages over a relatively small time interval compared with the time interval during which photons impinge upon the wafer.

12. A charge transfer imaging device comprising:

a charge storage medium;

an insulating layer covering over said surface and over the charge storage media plurality of electrode field plates disposed on the insulating layer and overlying spaced sites within the charge storage medium wherein charge can be stored when appropriate electrical bias is applied to the field plates, said charge storage sites forming a series path along the medium, said electrode field plates being spaced along the insulating layer with each contiguous to at least two other field plates such that with appropriate electrical bias applied to said electrode field plates electrical charge can be made to pass controllably through the medium between selected charge storage sites and ultimately to an output located at the end of the series path and capable of converting charge to an electrical signal;

13 photo-sensitive means each associated with one of the charge storage sites and capable in response to incident photons to cause a variation in charge stored at the associated site;

means for enabling incident photons to impinge upon the photosensitive means; and

means for applying cyclically varying voltages to the electrode field plates, said voltages being such as to establish at one set of non-contiguous storage sites the appropriate bias for storing charge and to establish in another set of difierent storage sites the appropriate bias for transferring charge therein to said one set and upon subsequently varying the bias for transferring charge from said one set to said other set and thus along the series path of storage sites to the output, whereby from the output can be derived a serial electrical signal representative of the photonvaried charge condition of the plurality of charge storage sites along the series path.

13. A charge transfer imaging device as set forth in claim 12 wherein the plurality of charge storage sites form an array of m rows of n charge storage sites per row, each row being formed by a series path and being terminated by a single output, means coupled to the output of each row for deriving a serial electrical signal representative of a line of incident photons, and means for operating the device to provide in serial fashion the electrical signals derived from the m rows to provide a video signal of the photon intensity of an image incident on the array.

14. A charge transfer imaging device body having a semiconductor surface layer, layer over the semiconductor surface layer, linearly-arranged electrode comprising a an insulating a plurality of field plates disposed over the insulating layer, said electrode field plates being divided into at least first and second sets of non-contiguous plates, source of cyclically varying voltages, means for applying the cyclically varying voltages to the first and second sets such that the plate sets vary in voltage between first and second values which when applied to a plate are copable of establishing in an underlying portion of the semiconductor layer a site whereat electrical charge can be stored, said charge storage sites formed under the first and second plate sets being linearly arranged, said charge storage sites comprising a depletion layer and having a reference potential in the absence of incident photons, means for imaging a line of an object onto the device whereby the photons incident thereon cause a variation representative of the photon intensity from the reference value in the potential at charge storage sites along a line, and output means coupled to a storage site at the end of the line and capable of converting a variation in potential into an electrical signal, the voltage applied to one set of field plates being different than that applied to the other set of field plates whereby during the first voltage value charge representative of a potential variation is caused to flow through the semiconductor layer toward the output between storage sites located under the first plate set toward storage sites located under the second plate set and during the second voltage value charge representative of a potential variation is caused to flow through the semiconductor layer toward the the output between storage sites located under the second plate set toward storage sites located under the first plate set and so on, whereby localized potential variations at storage sites are transferred along the line and thus from the output can be derived an electrical signal representative of photon-varied charge conditions.

15. A charge transfer imaging device as claimed in claim 14 and further comprising plural lines of linearlyarranged electrode field plates defining plural lines of charge storage sites to form a two-dimensional array of lines.

16. A charge transfer imaging device as claimed in claim 15, wherein a common output means is coupled to the two-dimensional array of lines.

References Cited The following references, cited by the Examiner, are of record in the patented file of this patent or the original State Image Sensors" by Weckler, May 1967, pp. -79. JERRY D. CRAIG, Primary Examiner US. Cl. X.R. 307-221 D, 304; 178-11; 317-235 G, 235 N Dated M h 25 1&14

Patent NO-Rp 2'1951 Inventor(s) i It is certified that error appears in the above-identified patent and that said Letters Patent are hereby corrected as shown below:

.Column 4, line 72, change "which" to while Column 10, line 39, change "initial" to internal Signed and sealed this 27th day of August 1974.

(SEAL) Attest:

MCCOY M. GIBSON, "JR.

Atte-sting Officer C. MARSHALL DANN Commissioner of Patents