JPS57172766A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS57172766A JPS57172766A JP5826281A JP5826281A JPS57172766A JP S57172766 A JPS57172766 A JP S57172766A JP 5826281 A JP5826281 A JP 5826281A JP 5826281 A JP5826281 A JP 5826281A JP S57172766 A JPS57172766 A JP S57172766A
- Authority
- JP
- Japan
- Prior art keywords
- charge transfer
- transfer part
- diffused layer
- depression type
- low voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
Abstract
PURPOSE:To make it possible to drive the output circuit of the charge transfer device by a low voltage and to make it suitable for a solid state image pickup element, by providing a depression type IGFET which resets a potential of a floating diffused layer into which the signal charge is transferred from a charge transfer part. CONSTITUTION:A CCD element 11 which is to become the charge transfer part is formed in a semiconductor substrate 20, and the depression type, embedded CCD charge transfer part 14 is formed below the CCD element 11 and the output gate 13. The floating diffused layer 3 is formed at the same time as the formation of said transfer part 14. A lower channel part 16 beneath a reset gate 15 surrounded by the layer 3 and a drain 5 is also of the depression type. Transistors 6, 7, 9, and 10, which are connected to the floating diffused layer 3, are formed in the substrate 20 so as to form a unitary body. Thus the manufacturing method is simplified, and the low voltage driving is facilitated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5826281A JPS57172766A (en) | 1981-04-16 | 1981-04-16 | Charge transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5826281A JPS57172766A (en) | 1981-04-16 | 1981-04-16 | Charge transfer device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57172766A true JPS57172766A (en) | 1982-10-23 |
Family
ID=13079238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5826281A Pending JPS57172766A (en) | 1981-04-16 | 1981-04-16 | Charge transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57172766A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131854U (en) * | 1985-02-06 | 1986-08-18 | ||
JPH01502634A (en) * | 1986-09-18 | 1989-09-07 | イーストマン・コダック・カンパニー | Image sensor output circuit |
US7755690B2 (en) * | 1997-08-15 | 2010-07-13 | Sony Corporation | Solid state image sensor with fixed pattern noise reduction |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5632764A (en) * | 1979-08-27 | 1981-04-02 | Nec Corp | Charge coupled device |
-
1981
- 1981-04-16 JP JP5826281A patent/JPS57172766A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5632764A (en) * | 1979-08-27 | 1981-04-02 | Nec Corp | Charge coupled device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131854U (en) * | 1985-02-06 | 1986-08-18 | ||
JPH01502634A (en) * | 1986-09-18 | 1989-09-07 | イーストマン・コダック・カンパニー | Image sensor output circuit |
US7755690B2 (en) * | 1997-08-15 | 2010-07-13 | Sony Corporation | Solid state image sensor with fixed pattern noise reduction |
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