JPS57172766A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS57172766A
JPS57172766A JP5826281A JP5826281A JPS57172766A JP S57172766 A JPS57172766 A JP S57172766A JP 5826281 A JP5826281 A JP 5826281A JP 5826281 A JP5826281 A JP 5826281A JP S57172766 A JPS57172766 A JP S57172766A
Authority
JP
Japan
Prior art keywords
charge transfer
transfer part
diffused layer
depression type
low voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5826281A
Other languages
Japanese (ja)
Inventor
Mototsugu Ogura
Yasuaki Terui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5826281A priority Critical patent/JPS57172766A/en
Publication of JPS57172766A publication Critical patent/JPS57172766A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816Output structures

Abstract

PURPOSE:To make it possible to drive the output circuit of the charge transfer device by a low voltage and to make it suitable for a solid state image pickup element, by providing a depression type IGFET which resets a potential of a floating diffused layer into which the signal charge is transferred from a charge transfer part. CONSTITUTION:A CCD element 11 which is to become the charge transfer part is formed in a semiconductor substrate 20, and the depression type, embedded CCD charge transfer part 14 is formed below the CCD element 11 and the output gate 13. The floating diffused layer 3 is formed at the same time as the formation of said transfer part 14. A lower channel part 16 beneath a reset gate 15 surrounded by the layer 3 and a drain 5 is also of the depression type. Transistors 6, 7, 9, and 10, which are connected to the floating diffused layer 3, are formed in the substrate 20 so as to form a unitary body. Thus the manufacturing method is simplified, and the low voltage driving is facilitated.
JP5826281A 1981-04-16 1981-04-16 Charge transfer device Pending JPS57172766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5826281A JPS57172766A (en) 1981-04-16 1981-04-16 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5826281A JPS57172766A (en) 1981-04-16 1981-04-16 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS57172766A true JPS57172766A (en) 1982-10-23

Family

ID=13079238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5826281A Pending JPS57172766A (en) 1981-04-16 1981-04-16 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS57172766A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131854U (en) * 1985-02-06 1986-08-18
JPH01502634A (en) * 1986-09-18 1989-09-07 イーストマン・コダック・カンパニー Image sensor output circuit
US7755690B2 (en) * 1997-08-15 2010-07-13 Sony Corporation Solid state image sensor with fixed pattern noise reduction

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632764A (en) * 1979-08-27 1981-04-02 Nec Corp Charge coupled device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5632764A (en) * 1979-08-27 1981-04-02 Nec Corp Charge coupled device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131854U (en) * 1985-02-06 1986-08-18
JPH01502634A (en) * 1986-09-18 1989-09-07 イーストマン・コダック・カンパニー Image sensor output circuit
US7755690B2 (en) * 1997-08-15 2010-07-13 Sony Corporation Solid state image sensor with fixed pattern noise reduction

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