JPS56104444A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56104444A JPS56104444A JP735180A JP735180A JPS56104444A JP S56104444 A JPS56104444 A JP S56104444A JP 735180 A JP735180 A JP 735180A JP 735180 A JP735180 A JP 735180A JP S56104444 A JPS56104444 A JP S56104444A
- Authority
- JP
- Japan
- Prior art keywords
- grooves
- semiconductor device
- groove
- semiconductor substrate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve the electric characteristics of the semiconductor device by forming grooves of specific width on a semiconductor substrate and an insulating layer formed thereon, filling surface stabilizing glass in the grooves to control the glass amount in the grooves and thus preventing the crack. CONSTITUTION:An insulating layer 10 is formed on the surface of the semiconductor substrate 11, the groove having a width W, which is less than 500mu, is formed on the layer, the groove 12 having a width X, which is 10-480mu, is formed on the semiconductor substrate, the surface stabilizing glass B having 0.417 of heat shrinkage rate as an example is so formed in the groove as to be higher than the surface of the layer by electrodeposition and burnt to be stabilized. Since sufficient amount of surface stabilizing glass can be thus filled in the grooves, no crack occurs, and the electric characteristics of the semiconductor device can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP735180A JPS56104444A (en) | 1980-01-24 | 1980-01-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP735180A JPS56104444A (en) | 1980-01-24 | 1980-01-24 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56104444A true JPS56104444A (en) | 1981-08-20 |
JPS623975B2 JPS623975B2 (en) | 1987-01-28 |
Family
ID=11663526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP735180A Granted JPS56104444A (en) | 1980-01-24 | 1980-01-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56104444A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5433794A (en) * | 1992-12-10 | 1995-07-18 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53108771A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Semiconductor device |
-
1980
- 1980-01-24 JP JP735180A patent/JPS56104444A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53108771A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5433794A (en) * | 1992-12-10 | 1995-07-18 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
US5733383A (en) * | 1992-12-10 | 1998-03-31 | Micron Technology, Inc. | Spacers used to form isolation trenches with improved corners |
US5868870A (en) * | 1992-12-10 | 1999-02-09 | Micron Technology, Inc. | Isolation structure of a shallow semiconductor device trench |
US5966615A (en) * | 1992-12-10 | 1999-10-12 | Micron Technology, Inc. | Method of trench isolation using spacers to form isolation trenches with protected corners |
Also Published As
Publication number | Publication date |
---|---|
JPS623975B2 (en) | 1987-01-28 |
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