JPS56104444A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56104444A
JPS56104444A JP735180A JP735180A JPS56104444A JP S56104444 A JPS56104444 A JP S56104444A JP 735180 A JP735180 A JP 735180A JP 735180 A JP735180 A JP 735180A JP S56104444 A JPS56104444 A JP S56104444A
Authority
JP
Japan
Prior art keywords
grooves
semiconductor device
groove
semiconductor substrate
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP735180A
Other languages
Japanese (ja)
Other versions
JPS623975B2 (en
Inventor
Yasuo Shimizu
Sadashige Hosomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP735180A priority Critical patent/JPS56104444A/en
Publication of JPS56104444A publication Critical patent/JPS56104444A/en
Publication of JPS623975B2 publication Critical patent/JPS623975B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the electric characteristics of the semiconductor device by forming grooves of specific width on a semiconductor substrate and an insulating layer formed thereon, filling surface stabilizing glass in the grooves to control the glass amount in the grooves and thus preventing the crack. CONSTITUTION:An insulating layer 10 is formed on the surface of the semiconductor substrate 11, the groove having a width W, which is less than 500mu, is formed on the layer, the groove 12 having a width X, which is 10-480mu, is formed on the semiconductor substrate, the surface stabilizing glass B having 0.417 of heat shrinkage rate as an example is so formed in the groove as to be higher than the surface of the layer by electrodeposition and burnt to be stabilized. Since sufficient amount of surface stabilizing glass can be thus filled in the grooves, no crack occurs, and the electric characteristics of the semiconductor device can be improved.
JP735180A 1980-01-24 1980-01-24 Manufacture of semiconductor device Granted JPS56104444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP735180A JPS56104444A (en) 1980-01-24 1980-01-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP735180A JPS56104444A (en) 1980-01-24 1980-01-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56104444A true JPS56104444A (en) 1981-08-20
JPS623975B2 JPS623975B2 (en) 1987-01-28

Family

ID=11663526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP735180A Granted JPS56104444A (en) 1980-01-24 1980-01-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56104444A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433794A (en) * 1992-12-10 1995-07-18 Micron Technology, Inc. Spacers used to form isolation trenches with improved corners

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108771A (en) * 1977-03-04 1978-09-21 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108771A (en) * 1977-03-04 1978-09-21 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433794A (en) * 1992-12-10 1995-07-18 Micron Technology, Inc. Spacers used to form isolation trenches with improved corners
US5733383A (en) * 1992-12-10 1998-03-31 Micron Technology, Inc. Spacers used to form isolation trenches with improved corners
US5868870A (en) * 1992-12-10 1999-02-09 Micron Technology, Inc. Isolation structure of a shallow semiconductor device trench
US5966615A (en) * 1992-12-10 1999-10-12 Micron Technology, Inc. Method of trench isolation using spacers to form isolation trenches with protected corners

Also Published As

Publication number Publication date
JPS623975B2 (en) 1987-01-28

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