JPH01156573U

JPH01156573U -

Info

Publication number: JPH01156573U
Application number: JP5002688U
Authority: JP
Priority date: 1988-04-14
Filing date: 1988-04-14
Publication date: 1989-10-27

Description

[Brief explanation of the drawing]

第１図はこの考案の一実施例に係る発光ダイオ
ードの概略構成図、第２図Ａ〜Ｇは第１図の実施
例の発光ダイオード製作のための製作工程図、第
３図は無収差レンズを取付けた場合の概略構成図
、第４図は球レンズを取付けた場合の概略構成図
、第５図は従来の発光ダイオードの概略構成図、
第６図Ａ〜Ｇは従来の発光ダイオードの製作工程
図、第７図は他の従来の発光ダイオードの概略構
成図を示す。１：化合物半導体基板、２，２１：電極、３，
３１，３３：マスク、４：ホトマスク、５：発光
部、１１ａ：凹部、１２ａ：モノリシツクレンズ
。なお、図中同一符号は同一又は相当部分を示す
。 Figure 1 is a schematic configuration diagram of a light emitting diode according to an embodiment of this invention, Figures 2 A to G are manufacturing process diagrams for manufacturing the light emitting diode of the embodiment of Figure 1, and Figure 3 is an aberration-free lens. 4 is a schematic diagram of the structure when a ball lens is attached. Figure 5 is a schematic diagram of a conventional light emitting diode.
6A to 6G are manufacturing process diagrams of a conventional light emitting diode, and FIG. 7 is a schematic diagram of another conventional light emitting diode. 1: compound semiconductor substrate, 2, 21: electrode, 3,
31, 33: Mask, 4: Photomask, 5: Light emitting part, 11a: Concave part, 12a: Monolithic lens. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims

[Scope of utility model registration request]

In a light emitting diode comprising a monolithic lens and one electrode on the surface of a compound semiconductor substrate, and a light emitting part and another electrode on the back side of the compound semiconductor substrate, the height position of the monolithic lens is set at the height of the one electrode. A light emitting diode characterized in that it is formed below a height position.