JPS56100427A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56100427A
JPS56100427A JP336580A JP336580A JPS56100427A JP S56100427 A JPS56100427 A JP S56100427A JP 336580 A JP336580 A JP 336580A JP 336580 A JP336580 A JP 336580A JP S56100427 A JPS56100427 A JP S56100427A
Authority
JP
Japan
Prior art keywords
impurities
constitution
electrode
layer
laser beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP336580A
Other languages
Japanese (ja)
Other versions
JPS626649B2 (en
Inventor
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP336580A priority Critical patent/JPS56100427A/en
Publication of JPS56100427A publication Critical patent/JPS56100427A/en
Publication of JPS626649B2 publication Critical patent/JPS626649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To complete recovery of crystallinity and ohmic contact by attaching electrode metal through selective addition of impurities and then by applying laser beams for heat treatment. CONSTITUTION:P ions are injected to a P type Si substrate 11 through the opening of SiO212. Then, poly-Si 15 and Mo 16 are laminated, whereby an electrode wiring pattern is prepared. When Ar ion laser beams are applied subsequently, Mo silicate 17 having a nonstoichimetrical composition is produced and the P ions injected turn active electrically, whereby an N layer 18 is formed. By this constitution, the rate of activation of impurities can be raised, while an electrode is fitted to the layer of impurities.
JP336580A 1980-01-16 1980-01-16 Manufacture of semiconductor device Granted JPS56100427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP336580A JPS56100427A (en) 1980-01-16 1980-01-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP336580A JPS56100427A (en) 1980-01-16 1980-01-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56100427A true JPS56100427A (en) 1981-08-12
JPS626649B2 JPS626649B2 (en) 1987-02-12

Family

ID=11555312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP336580A Granted JPS56100427A (en) 1980-01-16 1980-01-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56100427A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384024A (en) * 1986-09-26 1988-04-14 Seiko Epson Corp Manufacture of semiconductor device
JP2011124455A (en) * 2009-12-11 2011-06-23 Japan Steel Works Ltd:The Method of manufacturing semiconductor substrate, and laser annealing apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042361Y2 (en) * 1987-02-28 1992-01-27
JPH042360Y2 (en) * 1987-02-28 1992-01-27

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130184A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic resistance element process
JPS5691460A (en) * 1979-12-25 1981-07-24 Seiko Epson Corp Manufacturing of dispersion layer resistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130184A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic resistance element process
JPS5691460A (en) * 1979-12-25 1981-07-24 Seiko Epson Corp Manufacturing of dispersion layer resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384024A (en) * 1986-09-26 1988-04-14 Seiko Epson Corp Manufacture of semiconductor device
JP2011124455A (en) * 2009-12-11 2011-06-23 Japan Steel Works Ltd:The Method of manufacturing semiconductor substrate, and laser annealing apparatus

Also Published As

Publication number Publication date
JPS626649B2 (en) 1987-02-12

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