JPS57134970A - Manufacture of thin film transistor - Google Patents
Manufacture of thin film transistorInfo
- Publication number
- JPS57134970A JPS57134970A JP1989181A JP1989181A JPS57134970A JP S57134970 A JPS57134970 A JP S57134970A JP 1989181 A JP1989181 A JP 1989181A JP 1989181 A JP1989181 A JP 1989181A JP S57134970 A JPS57134970 A JP S57134970A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- gate
- region
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To improve switching characteristics by a method wherein gate insulation film for TFT using high resistance thin semiconductor film on an insulating substrate is formed under the low temperature less than 500 deg.C uniformly and with high guality and by simplified process. CONSTITUTION:Poly-Si film is formed on an insulating substrate by CVD method and is annealed by laser beam and semiconductor film is formed. Conductive film is formed by depositing metal film on the region other than the activated region such as a gate region and the electric source is connected between this conductive film and the corresponding electrode and anode film is uniformly formed on the activated region by anode oxidization. Then a gate electrode 6 is formed on the insulation film and at the same time a source electrode 12, a drain electrode 13 are also formed. At that time, the patterning of the source electrode, etc., is performed simultaneously with the patterning of the gate electrode 6. Thus, as the anode oxidized electrode is used corresponding to the conductive film, the uniform gate oxide film can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989181A JPS57134970A (en) | 1981-02-13 | 1981-02-13 | Manufacture of thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989181A JPS57134970A (en) | 1981-02-13 | 1981-02-13 | Manufacture of thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57134970A true JPS57134970A (en) | 1982-08-20 |
| JPH0348670B2 JPH0348670B2 (en) | 1991-07-25 |
Family
ID=12011812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989181A Granted JPS57134970A (en) | 1981-02-13 | 1981-02-13 | Manufacture of thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57134970A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100468A (en) * | 1983-11-07 | 1985-06-04 | Hitachi Ltd | Thin film semiconductor device and manufacture thereof |
| JPH05243577A (en) * | 1992-02-26 | 1993-09-21 | Seiko Epson Corp | Manufacture of thin film transistor |
| FR2752338A1 (en) * | 1996-06-28 | 1998-02-13 | Lg Electronics Inc | SILICIDE THIN FILM TRANSISTOR |
-
1981
- 1981-02-13 JP JP1989181A patent/JPS57134970A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100468A (en) * | 1983-11-07 | 1985-06-04 | Hitachi Ltd | Thin film semiconductor device and manufacture thereof |
| JPH0530053B2 (en) * | 1983-11-07 | 1993-05-07 | Hitachi Ltd | |
| JPH05243577A (en) * | 1992-02-26 | 1993-09-21 | Seiko Epson Corp | Manufacture of thin film transistor |
| FR2752338A1 (en) * | 1996-06-28 | 1998-02-13 | Lg Electronics Inc | SILICIDE THIN FILM TRANSISTOR |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0348670B2 (en) | 1991-07-25 |
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