JPS56144560A - Flip chip type transistor and manufacture thereof - Google Patents

Flip chip type transistor and manufacture thereof

Info

Publication number
JPS56144560A
JPS56144560A JP4830380A JP4830380A JPS56144560A JP S56144560 A JPS56144560 A JP S56144560A JP 4830380 A JP4830380 A JP 4830380A JP 4830380 A JP4830380 A JP 4830380A JP S56144560 A JPS56144560 A JP S56144560A
Authority
JP
Japan
Prior art keywords
protecting film
film
solder
electrode
flip chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4830380A
Other languages
Japanese (ja)
Inventor
Michihiro Kobiki
Manabu Watase
Yasuro Mitsui
Mutsuyuki Otsubo
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4830380A priority Critical patent/JPS56144560A/en
Publication of JPS56144560A publication Critical patent/JPS56144560A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13018—Shape in side view comprising protrusions or indentations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the yield and reliability in soldering by forming the thick plating electrode of a flip chip type FET from metal layers of two or more kinds. CONSTITUTION:On a GaAs substrate 1, an active layer 2 is selectively provided to form source and drain electrodes 3 and 4 which are brought into ohmic contact therewith and a gate electrode 5 (only the pad is shown) which is brought into Schottky contact therewith. An underlay protecting film 16 is selectively provided and coated with a metal film 17. Subsequently, a surface protecting film 18 is selectively formed so as to correspond to the protecting film 16, and with the film 18 as a mask, plating is applied thickly, piling Au19, Pt20 and Au21 successively to form electrodes 6-8. Then, the protecting film 18, the metal film 17 and the protecting film 16 are removed to reach completion. By said constitution, when this is soldered to a carrier 10 by using a soldering material 15 containing Au as the principal component, because the electrode 6 has excellent solderability the solder will not pass around along the electrode surface. Accordingly no short-circuiting occurs. In addition, being not corroded by the solder, the Pt prevents short-circuiting and the penetration of the solder. Accordingly, characteristics will not deteriorate.
JP4830380A 1980-04-10 1980-04-10 Flip chip type transistor and manufacture thereof Pending JPS56144560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4830380A JPS56144560A (en) 1980-04-10 1980-04-10 Flip chip type transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4830380A JPS56144560A (en) 1980-04-10 1980-04-10 Flip chip type transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56144560A true JPS56144560A (en) 1981-11-10

Family

ID=12799656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4830380A Pending JPS56144560A (en) 1980-04-10 1980-04-10 Flip chip type transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56144560A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104488086A (en) * 2013-04-16 2015-04-01 住友电气工业株式会社 Solder-attached semiconductor device, mounted solder-attached semiconductor device, methods for manufacturing and mounting solder-attached semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52670A (en) * 1975-06-13 1977-01-06 Fumio Ozawa Sonar
JPS52152165A (en) * 1976-06-14 1977-12-17 Hitachi Ltd Formation of solder bump electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52670A (en) * 1975-06-13 1977-01-06 Fumio Ozawa Sonar
JPS52152165A (en) * 1976-06-14 1977-12-17 Hitachi Ltd Formation of solder bump electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104488086A (en) * 2013-04-16 2015-04-01 住友电气工业株式会社 Solder-attached semiconductor device, mounted solder-attached semiconductor device, methods for manufacturing and mounting solder-attached semiconductor device

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