JPS56142666A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56142666A
JPS56142666A JP4469880A JP4469880A JPS56142666A JP S56142666 A JPS56142666 A JP S56142666A JP 4469880 A JP4469880 A JP 4469880A JP 4469880 A JP4469880 A JP 4469880A JP S56142666 A JPS56142666 A JP S56142666A
Authority
JP
Japan
Prior art keywords
electrode part
layer
pure metal
electrode
pure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4469880A
Other languages
Japanese (ja)
Inventor
Tatsuhiko Tanaka
Kazuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4469880A priority Critical patent/JPS56142666A/en
Publication of JPS56142666A publication Critical patent/JPS56142666A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H01L2224/05558—Shape in side view conformal layer on a patterned surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To readily and effectively bond a metallic lead wire in a semiconductor device by disposing both electrode parts so that the ohmic electrode part formed previously may superpose partly at the electrode part of the bonding. CONSTITUTION:A gold-zinc alloy layer 13a is formed on the upper surface of a P type semiconductor layer 12a of a GaP light emitting diode substrate 12, a pure metal 13b is subsequently formed, a heat treatment is conducted, and the metal 13b is ohmically contacted with the substrate 12. Then, an oxide layer formed on the surface of the pure metal layer 13b is removed by mixed acid. Then, an alloy layer 13a and a pure metal layer 13b are formed in H shape to form ohmic contact electrode part 13. Then, a pure metal layer 14 is formed by mask evaporation so that the electrode part 13 is partly superposed as a bonding electrode part. Thereafter, it is cut into chips, the chip is mounted on a header with conductor paste, baked, and a pure metallic lead wire is bonded to the electrode 11.
JP4469880A 1980-04-07 1980-04-07 Semiconductor device Pending JPS56142666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4469880A JPS56142666A (en) 1980-04-07 1980-04-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4469880A JPS56142666A (en) 1980-04-07 1980-04-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56142666A true JPS56142666A (en) 1981-11-07

Family

ID=12698629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4469880A Pending JPS56142666A (en) 1980-04-07 1980-04-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142666A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180430A (en) * 1985-02-06 1986-08-13 Toshiba Corp Formation of electrode of semiconductor device
JPS6352490A (en) * 1986-08-22 1988-03-05 Toshiba Corp Glass-sealed light-emitting semiconductor device
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489570A (en) * 1977-12-13 1979-07-16 Philips Nv Method of forming junction on surface of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489570A (en) * 1977-12-13 1979-07-16 Philips Nv Method of forming junction on surface of semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180430A (en) * 1985-02-06 1986-08-13 Toshiba Corp Formation of electrode of semiconductor device
JPS6352490A (en) * 1986-08-22 1988-03-05 Toshiba Corp Glass-sealed light-emitting semiconductor device
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form

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