JPS5797680A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5797680A
JPS5797680A JP17421480A JP17421480A JPS5797680A JP S5797680 A JPS5797680 A JP S5797680A JP 17421480 A JP17421480 A JP 17421480A JP 17421480 A JP17421480 A JP 17421480A JP S5797680 A JPS5797680 A JP S5797680A
Authority
JP
Japan
Prior art keywords
layer
insulating film
gold
source
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17421480A
Other languages
Japanese (ja)
Inventor
Masahide Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17421480A priority Critical patent/JPS5797680A/en
Publication of JPS5797680A publication Critical patent/JPS5797680A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the reliability of a wiring layer in a semiconductor device by extending with metal ohmically contacted with a GaAs active layer on an insulating film and plating gold with the ohmic metal as a primary layer metal. CONSTITUTION:After a gate wiring electrode 13 is formed on a GaAs semi- insulating substrate 11 formed with an active layer 12, an insulating film layer 17 is covered, and the insulating film layer of the drain and source ohmic electrode parts is etched and removed. After gold-germanium or the like is ohmically coated and alloyed on the part removed with the insulating film layer and the source wiring electrode part on the layer 17, gold is plated directly on the metal 19. The gold-germanium has strong adhesiveness with the insulating film, and is adapted for the wiring layer. Accordingly, source ohmic electrode, source bonding electrode and source wiring electrode can be simultaneously formed, thereby shortening the steps and improving the yield.
JP17421480A 1980-12-10 1980-12-10 Semiconductor device Pending JPS5797680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17421480A JPS5797680A (en) 1980-12-10 1980-12-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17421480A JPS5797680A (en) 1980-12-10 1980-12-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5797680A true JPS5797680A (en) 1982-06-17

Family

ID=15974714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17421480A Pending JPS5797680A (en) 1980-12-10 1980-12-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797680A (en)

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