JPS57153479A - Nitride gallium light emitting element - Google Patents

Nitride gallium light emitting element

Info

Publication number
JPS57153479A
JPS57153479A JP3896381A JP3896381A JPS57153479A JP S57153479 A JPS57153479 A JP S57153479A JP 3896381 A JP3896381 A JP 3896381A JP 3896381 A JP3896381 A JP 3896381A JP S57153479 A JPS57153479 A JP S57153479A
Authority
JP
Japan
Prior art keywords
layer
metal
area
solder
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3896381A
Other languages
Japanese (ja)
Other versions
JPS6222556B2 (en
Inventor
Yoshimasa Oki
Yukio Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3896381A priority Critical patent/JPS57153479A/en
Publication of JPS57153479A publication Critical patent/JPS57153479A/en
Publication of JPS6222556B2 publication Critical patent/JPS6222556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To prevent short circuit by solder, by providing metal of high adhesiveness with crystal in the lower layer of more than two layers of LED electrode metal of Ga N, and by laminating a metal of high adhesiveness by solder in smaller area than the lower layer thereby providing a solder bump on the upper layer metal. CONSTITUTION:An electrode 44 on an i type Ga N layer 3 has two layers and the layer 4 is made of metal (Ti) which repels solder but well adheres to crystal surface. The area of the layer 4 is wide enough for the light emitting region of Ga N LED and a solderable metal (Ni) is laminated on the area smaller than the layer 4. It is formed by a preset method at the necessary distance from an electrode connected with an n type Ga N layer 2. There is no need of changing the area of the electrode 55 because it has a small area between the layers 5' and 5''. It may be effective to provide the A layer below the layers 4' and 5' in order to improve adhesiveness to the i type Ga N layer. A chip of this contruction prevents a short circuit by the diffusion of solder flow and increases the ratio of effective light emitting surface to the chip area.
JP3896381A 1981-03-17 1981-03-17 Nitride gallium light emitting element Granted JPS57153479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3896381A JPS57153479A (en) 1981-03-17 1981-03-17 Nitride gallium light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3896381A JPS57153479A (en) 1981-03-17 1981-03-17 Nitride gallium light emitting element

Publications (2)

Publication Number Publication Date
JPS57153479A true JPS57153479A (en) 1982-09-22
JPS6222556B2 JPS6222556B2 (en) 1987-05-19

Family

ID=12539819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3896381A Granted JPS57153479A (en) 1981-03-17 1981-03-17 Nitride gallium light emitting element

Country Status (1)

Country Link
JP (1) JPS57153479A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
JPH08316529A (en) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emitting device
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
KR100622823B1 (en) 2004-05-07 2006-09-14 엘지전자 주식회사 Method of fabricating light emitting device
EP2262017A3 (en) * 2001-07-23 2017-01-04 Cree, Inc. Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
USRE36747E (en) * 1992-07-23 2000-06-27 Toyoda Gosei Co., Ltd Light-emitting device of gallium nitride compound semiconductor
EP1313153A2 (en) * 1992-07-23 2003-05-21 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US8934513B2 (en) 1994-09-14 2015-01-13 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08316529A (en) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emitting device
EP2262017A3 (en) * 2001-07-23 2017-01-04 Cree, Inc. Flip-Chip bonding of light emitting devices and light emitting devices suitable for Flip-Chip bonding
KR100622823B1 (en) 2004-05-07 2006-09-14 엘지전자 주식회사 Method of fabricating light emitting device

Also Published As

Publication number Publication date
JPS6222556B2 (en) 1987-05-19

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