JPS57188848A - Circuit element - Google Patents

Circuit element

Info

Publication number
JPS57188848A
JPS57188848A JP7352781A JP7352781A JPS57188848A JP S57188848 A JPS57188848 A JP S57188848A JP 7352781 A JP7352781 A JP 7352781A JP 7352781 A JP7352781 A JP 7352781A JP S57188848 A JPS57188848 A JP S57188848A
Authority
JP
Japan
Prior art keywords
gold
tin
circuit element
oxidation
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7352781A
Other languages
Japanese (ja)
Inventor
Masamichi Kobayashi
Yoichi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7352781A priority Critical patent/JPS57188848A/en
Publication of JPS57188848A publication Critical patent/JPS57188848A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To join the tin layer of the surface of a connecting electrode on the circuit element such as a light emitting diode for fixing the circuit element onto a wiring substrate through face-down bonding as a gold tin alloyed layer by preventing the oxidation of the tin layer by a gold film. CONSTITUTION:The cathode electrode 3 and anode electrode 4 of the circuit element 1 such as the light emitting diode are each formed by gold evaporated layers 15, tin evaporated layers 16 and gold protective films 17 preventing the oxidation of the tin evaporated layers. The oxidation of these each electrode is prevented by the gold protective layers, and gold tin eutectic alloys are formed through heating and bonding is easily conducted when face-down bonding.
JP7352781A 1981-05-18 1981-05-18 Circuit element Pending JPS57188848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7352781A JPS57188848A (en) 1981-05-18 1981-05-18 Circuit element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7352781A JPS57188848A (en) 1981-05-18 1981-05-18 Circuit element

Publications (1)

Publication Number Publication Date
JPS57188848A true JPS57188848A (en) 1982-11-19

Family

ID=13520792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7352781A Pending JPS57188848A (en) 1981-05-18 1981-05-18 Circuit element

Country Status (1)

Country Link
JP (1) JPS57188848A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112250A (en) * 1988-08-31 1990-04-24 Siemens Ag Method of coupling semiconductor chip with substrate
US4922322A (en) * 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
US5208186A (en) * 1989-02-09 1993-05-04 National Semiconductor Corporation Process for reflow bonding of bumps in IC devices
JP2011138913A (en) * 2009-12-28 2011-07-14 Citizen Holdings Co Ltd Semiconductor light-emitting element and method for manufacturing the same
JP2013520813A (en) * 2010-02-22 2013-06-06 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Semiconductor diode and method for manufacturing semiconductor diode
US20130256387A1 (en) * 2012-03-27 2013-10-03 Fujitsu Limited Light emitting member mounting method and apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112250A (en) * 1988-08-31 1990-04-24 Siemens Ag Method of coupling semiconductor chip with substrate
US4922322A (en) * 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
US5208186A (en) * 1989-02-09 1993-05-04 National Semiconductor Corporation Process for reflow bonding of bumps in IC devices
JP2011138913A (en) * 2009-12-28 2011-07-14 Citizen Holdings Co Ltd Semiconductor light-emitting element and method for manufacturing the same
JP2013520813A (en) * 2010-02-22 2013-06-06 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Semiconductor diode and method for manufacturing semiconductor diode
US20130256387A1 (en) * 2012-03-27 2013-10-03 Fujitsu Limited Light emitting member mounting method and apparatus
US8777091B2 (en) * 2012-03-27 2014-07-15 Fujitsu Limited Light emitting member mounting method and apparatus

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS57188848A (en) Circuit element
JPS5548954A (en) Manufacturing of film carrier
JPS57197838A (en) Semiconductor flip chip element
EP0186350A3 (en) Multilayer ohmic contact for p-type semiconductor and method of making same
JPS57153479A (en) Nitride gallium light emitting element
JPS57149759A (en) Tape carrier for semiconductor
JPS52130295A (en) Semiconductor light emitting device
JPS5455390A (en) Light emitting element
JPS57106141A (en) Connecting method for hybrid integrated circuit substrate to semiconductor pellet
JPS55120162A (en) Semiconductor device
JPS5469980A (en) Production of compound semiconductor light emitting elements
JPS55103742A (en) Fabrication of electrode of semiconductor element
JPS5745272A (en) Manufacture of solid image pick-up element
JPS5710993A (en) Semiconductor light emitting device
JPS54109769A (en) Semiconductor device connecting tape
JPS54156493A (en) Forming method of compound semiconductor light emitting element electrode
JPS5469978A (en) Production of compound semiconductor light emitting elements
JPS54114973A (en) Semiconductor device
JPS5411690A (en) Semiconductor laser unit
JPS5613750A (en) Semiconductor device
JPS54119885A (en) Semiconductor light emitting display unit
JPS57211763A (en) Surface treatment for lead frame for semiconductor
JPS537187A (en) Production of semiconductor laser device
JPS53117970A (en) Resin seal type semiconductor device