JPS5455390A - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JPS5455390A JPS5455390A JP12278977A JP12278977A JPS5455390A JP S5455390 A JPS5455390 A JP S5455390A JP 12278977 A JP12278977 A JP 12278977A JP 12278977 A JP12278977 A JP 12278977A JP S5455390 A JPS5455390 A JP S5455390A
- Authority
- JP
- Japan
- Prior art keywords
- face
- junction
- layer
- substrate
- serration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To prevent contamination of pn junction at the time of mounting by leaving excess hems on the pn junction face with respect to the mount side bottom face thereby providing a serration in a pellet in which the pn junction exposes to the side face.
CONSTITUTION: An N layer 12 and a P layer 13 are liquid phase epitaxially formed on an N type GaP substrate 11, and an Al electrode 14 and a gold-Si alloy electrode 15 are deposited. Next, grooves are formed, after which the substrate is separated to pellets, then a serration is formed on the side faces of the layers 12, 13 and the side face of the layer 11. This prevents solder and paste from creeping up to the pn junction part at the time of mounting the substrate 11 face
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12278977A JPS5455390A (en) | 1977-10-12 | 1977-10-12 | Light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12278977A JPS5455390A (en) | 1977-10-12 | 1977-10-12 | Light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5455390A true JPS5455390A (en) | 1979-05-02 |
Family
ID=14844651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12278977A Pending JPS5455390A (en) | 1977-10-12 | 1977-10-12 | Light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5455390A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7190004B2 (en) | 2003-12-03 | 2007-03-13 | Sumitomo Electric Industries, Ltd. | Light emitting device |
US7202509B2 (en) | 2003-08-26 | 2007-04-10 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
US8823028B2 (en) | 2008-07-21 | 2014-09-02 | Lg Innotek Co., Ltd. | Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device |
US10519837B2 (en) | 2016-09-12 | 2019-12-31 | Chugoku Electric Power Co., Inc. | Combustion system |
-
1977
- 1977-10-12 JP JP12278977A patent/JPS5455390A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7202509B2 (en) | 2003-08-26 | 2007-04-10 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
US7687822B2 (en) | 2003-08-26 | 2010-03-30 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
US7190004B2 (en) | 2003-12-03 | 2007-03-13 | Sumitomo Electric Industries, Ltd. | Light emitting device |
US8823028B2 (en) | 2008-07-21 | 2014-09-02 | Lg Innotek Co., Ltd. | Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device |
US9680064B2 (en) | 2008-07-21 | 2017-06-13 | Lg Innotek Co., Ltd. | Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device |
US10519837B2 (en) | 2016-09-12 | 2019-12-31 | Chugoku Electric Power Co., Inc. | Combustion system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
JPS5455390A (en) | Light emitting element | |
JPS5224483A (en) | Phptoconducting element | |
JPS5417682A (en) | Semiconductor and its manufacture | |
JPS5419658A (en) | Semiconductor device | |
JPS5422186A (en) | Light emitting diode device | |
JPS5571080A (en) | Preparation of electrode for compound semiconductor luminous element | |
JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
JPS53110460A (en) | Electrode of compound semiconductor | |
JPS53120291A (en) | Manufacture of semiconductor laser | |
JPS5261983A (en) | Solar cell | |
JPS53135266A (en) | Production of semiconductor device | |
JPS5379479A (en) | Namufacture of monolithic solar battery | |
JPS5550656A (en) | Semiconductor device | |
JPS5552227A (en) | Semiconductor electrode structure | |
JPS546462A (en) | Manufacture of semiconductor | |
JPS5428584A (en) | Manufacture of semiconductor laser element | |
JPS5380184A (en) | Manufacture of semiconductor device | |
JPS52127190A (en) | Semiconductor laser device | |
JPS5555526A (en) | Method of manufacturing electrode | |
JPS52155081A (en) | Production of gallium phosphide light emitting element | |
JPS5481092A (en) | Manufacture of back field effect type solar battery | |
JPS52144272A (en) | Forming method of electrode in semiconductor device | |
JPS5379460A (en) | Manufacture of semiconductor device | |
JPS5382191A (en) | Solar cell |