JPS5745272A - Manufacture of solid image pick-up element - Google Patents

Manufacture of solid image pick-up element

Info

Publication number
JPS5745272A
JPS5745272A JP55121651A JP12165180A JPS5745272A JP S5745272 A JPS5745272 A JP S5745272A JP 55121651 A JP55121651 A JP 55121651A JP 12165180 A JP12165180 A JP 12165180A JP S5745272 A JPS5745272 A JP S5745272A
Authority
JP
Japan
Prior art keywords
section
coated
transparent electrode
photoconductive film
picture element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55121651A
Other languages
Japanese (ja)
Other versions
JPS6041874B2 (en
Inventor
Kazufumi Ogawa
Takuo Shibata
Taketoshi Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55121651A priority Critical patent/JPS6041874B2/en
Publication of JPS5745272A publication Critical patent/JPS5745272A/en
Publication of JPS6041874B2 publication Critical patent/JPS6041874B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To prevent a scar formed when using a metallic mask and the adhesion of a foreign matter, and to improve the yield of the manufacture of the photoconductive film laminating type solid image pick-up element by evaporating a photoconductive film and a transparent electrode on the whole surface without using the metallic mask. CONSTITUTION:A picture element section 12 sensing an optical image and a drive circuit section 13 driving the picture element section are formed onto a substrate 11. Conductor wiring 15 for connecting the drive circuit section and external leads 21 is shaped. The conductor wiring is coated with an insulating film 14' while leaving one part of a pad 17 of the conductor wiring 15. The whole surface at the side, to which the picture element section 12 is formed, in said substrate 11 is coated with the photoconductive film 18 and the transparent electrode 19. Said photoconductive film and said transparent electrode shaped on one part, which is not coated with said insulating film 14', of said pad 17 are removed by using laser beams, and the external lead wire 21 is connected to the removed section.
JP55121651A 1980-09-01 1980-09-01 Manufacturing method of solid-state image sensor Expired JPS6041874B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121651A JPS6041874B2 (en) 1980-09-01 1980-09-01 Manufacturing method of solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121651A JPS6041874B2 (en) 1980-09-01 1980-09-01 Manufacturing method of solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS5745272A true JPS5745272A (en) 1982-03-15
JPS6041874B2 JPS6041874B2 (en) 1985-09-19

Family

ID=14816519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121651A Expired JPS6041874B2 (en) 1980-09-01 1980-09-01 Manufacturing method of solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS6041874B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204512B1 (en) * 1993-04-28 2001-03-20 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor device and method of producing the same
US9525324B2 (en) 2010-11-04 2016-12-20 Michael Lamperth Axial flux electrical machines
JP2019140386A (en) * 2018-01-31 2019-08-22 パナソニックＩｐマネジメント株式会社 Imaging device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204512B1 (en) * 1993-04-28 2001-03-20 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor device and method of producing the same
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US6610995B2 (en) 1993-04-28 2003-08-26 Nichia Corporation Gallium nitride-based III-V group compound semiconductor
US6998690B2 (en) 1993-04-28 2006-02-14 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US7205220B2 (en) 1993-04-28 2007-04-17 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US7375383B2 (en) 1993-04-28 2008-05-20 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US9525324B2 (en) 2010-11-04 2016-12-20 Michael Lamperth Axial flux electrical machines
JP2019140386A (en) * 2018-01-31 2019-08-22 パナソニックＩｐマネジメント株式会社 Imaging device

Also Published As

Publication number Publication date
JPS6041874B2 (en) 1985-09-19

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