JPS6468729A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS6468729A
JPS6468729A JP62225822A JP22582287A JPS6468729A JP S6468729 A JPS6468729 A JP S6468729A JP 62225822 A JP62225822 A JP 62225822A JP 22582287 A JP22582287 A JP 22582287A JP S6468729 A JPS6468729 A JP S6468729A
Authority
JP
Japan
Prior art keywords
picture element
transparent picture
transparent
element electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225822A
Other languages
Japanese (ja)
Inventor
Haruo Wakai
Nobuyuki Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP62225822A priority Critical patent/JPS6468729A/en
Publication of JPS6468729A publication Critical patent/JPS6468729A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To connect a transparent picture element electrode and a source electrode securely without increasing the thickness of the transparent picture element electrode by connecting the transparent picture element and source electrode through the two-layered structure of the transparent picture element electrode and metallic layer formed in an nearby a contact hole. CONSTITUTION:A transparent insulating substrate 2 where a transistor (TR) area is formed is covered with a transparent insulating layer 18 and the transparent picture element electrode 5 and metallic layer 20 is formed in the two- layered structure in the contact hole 19 formed in the substrate from its top surface to the source electrode 13. Further, a light shield film 21 formed in the upper area of the TR area is used as a mask to remove the metallic layer 20 selectively and then the transparent picture element electrode 5 and source electrode 13 are connected mutually through the two-layered structure. Consequently, effective display area is widened and the transparent picture element electrode 5 and source electrode 13 are securely connected without increasing the thickness of the transparent picture element electrode 5.
JP62225822A 1987-09-09 1987-09-09 Manufacture of thin film transistor Pending JPS6468729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225822A JPS6468729A (en) 1987-09-09 1987-09-09 Manufacture of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225822A JPS6468729A (en) 1987-09-09 1987-09-09 Manufacture of thin film transistor

Publications (1)

Publication Number Publication Date
JPS6468729A true JPS6468729A (en) 1989-03-14

Family

ID=16835343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225822A Pending JPS6468729A (en) 1987-09-09 1987-09-09 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS6468729A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449123A2 (en) * 1990-03-24 1991-10-02 Sony Corporation Liquid crystal display device
WO2005047966A1 (en) * 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449123A2 (en) * 1990-03-24 1991-10-02 Sony Corporation Liquid crystal display device
EP0723179A1 (en) * 1990-03-24 1996-07-24 Sony Corporation Liquid crystal display device
WO2005047966A1 (en) * 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US7499117B2 (en) 2003-11-14 2009-03-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof

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