JPS5710993A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5710993A
JPS5710993A JP8604080A JP8604080A JPS5710993A JP S5710993 A JPS5710993 A JP S5710993A JP 8604080 A JP8604080 A JP 8604080A JP 8604080 A JP8604080 A JP 8604080A JP S5710993 A JPS5710993 A JP S5710993A
Authority
JP
Japan
Prior art keywords
layer
heat sink
light
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8604080A
Other languages
Japanese (ja)
Inventor
Toshiro Hayakawa
Kaneki Matsui
Jiyunkou Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8604080A priority Critical patent/JPS5710993A/en
Publication of JPS5710993A publication Critical patent/JPS5710993A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Abstract

PURPOSE:To prevent the alloying of a light-emitting cap layer and a heat sink with In, by laminating an MO layer and an Au layer on the MO layer at the respective confronting sides of a light-emitting element and a heat sink facing to each other through an In brazing material. CONSTITUTION:A semiconductor laser is formed by growing a clad layer 9, an active layer 8, a clad layer 7, and a GaAs cap layer 6 on a substrate 10 and Mo is used as an electrode 2 at a growth layer side. Au is adhered on the electrode 2' as the Mo is not painted on a blazing material. A Cu heat sink 1 mounting the semiconductor laser is covered by an Mo layer 2 and an Au layer 3. Both of them are faced to each other through an In blazing material 4. It is suitable to consist the gross weight of the Au layer at a light-emitting element side and that at a heat sink side as 25atm% or less of the In blazing material.
JP8604080A 1980-06-24 1980-06-24 Semiconductor light emitting device Pending JPS5710993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8604080A JPS5710993A (en) 1980-06-24 1980-06-24 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8604080A JPS5710993A (en) 1980-06-24 1980-06-24 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5710993A true JPS5710993A (en) 1982-01-20

Family

ID=13875558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8604080A Pending JPS5710993A (en) 1980-06-24 1980-06-24 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5710993A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165474A (en) * 1983-03-10 1984-09-18 Nec Corp Semiconductor light emitting element
JPS61151360U (en) * 1985-03-08 1986-09-18
JPH04293287A (en) * 1991-03-22 1992-10-16 Sanyo Electric Co Ltd Semiconductor laser device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52129390A (en) * 1976-04-23 1977-10-29 Sony Corp Production of semiconductor light emitting element
JPS5394885A (en) * 1977-01-31 1978-08-19 Sharp Corp Mount structure for semiconductor laser element
JPS5539696A (en) * 1978-07-25 1980-03-19 Thomson Csf Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52129390A (en) * 1976-04-23 1977-10-29 Sony Corp Production of semiconductor light emitting element
JPS5394885A (en) * 1977-01-31 1978-08-19 Sharp Corp Mount structure for semiconductor laser element
JPS5539696A (en) * 1978-07-25 1980-03-19 Thomson Csf Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165474A (en) * 1983-03-10 1984-09-18 Nec Corp Semiconductor light emitting element
JPS61151360U (en) * 1985-03-08 1986-09-18
JPH04293287A (en) * 1991-03-22 1992-10-16 Sanyo Electric Co Ltd Semiconductor laser device

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