JPS57178387A - Indicator for luminescence and its manufacture - Google Patents

Indicator for luminescence and its manufacture

Info

Publication number
JPS57178387A
JPS57178387A JP6487481A JP6487481A JPS57178387A JP S57178387 A JPS57178387 A JP S57178387A JP 6487481 A JP6487481 A JP 6487481A JP 6487481 A JP6487481 A JP 6487481A JP S57178387 A JPS57178387 A JP S57178387A
Authority
JP
Japan
Prior art keywords
electrode
type semiconductor
connecting section
electrode connecting
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6487481A
Other languages
Japanese (ja)
Inventor
Junichi Okamoto
Tsunenobu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6487481A priority Critical patent/JPS57178387A/en
Publication of JPS57178387A publication Critical patent/JPS57178387A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

Abstract

PURPOSE:To manufacture the indicator, which has simple structure and can be mounted positively through a wireless method, by forming an N electrode to a notch section shaped to the side surface of an N type semiconductor while forming an electrode connecting section to an insulating substrate as shaping steps in stages. CONSTITUTION:A light emitting diode element 26 is formed in such a manner that a P type semiconductor and the N type semiconductor are joined, a P electrode 23 is shaped to an end surface running parallel with the P-N junction surface of the P type semiconductor, and the N electrode 25 is formed to the notch section molded to an end surface including a side surface from which the P-N junction surface of the N type semiconductor is exposed. The electrode connecting section 29 is formed onto the insulating substrate 27 while an insulating block 31 is bonded through adhesives 32, and the electrode connecting section 34 is also shaped onto the block 31. Resin spots 36 are formed at both sides of the connecting section 29 in the region 37 of the electrode connecting section 29, and the element 26 is arranged onto the resin spots 36. The whole is immersed in a solder bath, and the electrodes 23, 25 and the electrode connecting sections 29, 34 are connected with each other.
JP6487481A 1981-04-28 1981-04-28 Indicator for luminescence and its manufacture Pending JPS57178387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6487481A JPS57178387A (en) 1981-04-28 1981-04-28 Indicator for luminescence and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6487481A JPS57178387A (en) 1981-04-28 1981-04-28 Indicator for luminescence and its manufacture

Publications (1)

Publication Number Publication Date
JPS57178387A true JPS57178387A (en) 1982-11-02

Family

ID=13270706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6487481A Pending JPS57178387A (en) 1981-04-28 1981-04-28 Indicator for luminescence and its manufacture

Country Status (1)

Country Link
JP (1) JPS57178387A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294493A (en) * 1997-02-21 1998-11-04 Toshiba Corp Semiconductor light-emitting device
JP2006140247A (en) * 2004-11-11 2006-06-01 Sony Corp Wiring connection method and display apparatus and manufacturing method thereof
JP2009004502A (en) * 2007-06-20 2009-01-08 Oki Data Corp Semiconductor device and led print head
JP2011503898A (en) * 2007-11-14 2011-01-27 クリー・インコーポレーテッド Wafer stage LED without wire bonding

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504990A (en) * 1973-05-16 1975-01-20
JPS5169991A (en) * 1974-12-16 1976-06-17 Hitachi Ltd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504990A (en) * 1973-05-16 1975-01-20
JPS5169991A (en) * 1974-12-16 1976-06-17 Hitachi Ltd

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294493A (en) * 1997-02-21 1998-11-04 Toshiba Corp Semiconductor light-emitting device
JP2006140247A (en) * 2004-11-11 2006-06-01 Sony Corp Wiring connection method and display apparatus and manufacturing method thereof
JP2009004502A (en) * 2007-06-20 2009-01-08 Oki Data Corp Semiconductor device and led print head
JP2011503898A (en) * 2007-11-14 2011-01-27 クリー・インコーポレーテッド Wafer stage LED without wire bonding

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