JPS56112767A - Light emitting semiconductor device - Google Patents

Light emitting semiconductor device

Info

Publication number
JPS56112767A
JPS56112767A JP1551380A JP1551380A JPS56112767A JP S56112767 A JPS56112767 A JP S56112767A JP 1551380 A JP1551380 A JP 1551380A JP 1551380 A JP1551380 A JP 1551380A JP S56112767 A JPS56112767 A JP S56112767A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
light emitting
diode
formed
photodetector
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1551380A
Inventor
Kazuhiro Kurata
Makoto Morioka
Takeo Takahashi
Original Assignee
Hitachi Ltd
Hitachi Tobu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

Abstract

PURPOSE:To integrate a light emitting element, a photodetector, an IC and so forth by forming electrode wires on the surface of a semiconductor substrate formed with a light emitting element driving circuit and fixedly connecting the semiconductor light emitting element to the electrode wire. CONSTITUTION:An electrode leading wire is formed on the main surface of the Si semiconductor substrate 1, and the electrodes of the light emitting diode 2 are fixedly connected to the wire. A circuit 7 for driving the diode 2 is formed on the main surface of the substrate 1, and the circuit 7 and the diode 2 are connected via the above wire. A photodetector 4, an amplifier 8 for the photodetector and wires for connecting therebetween may be formed on the substrate 1 as required in the same manner as above. In order to prevent the interference of the diode 2 to the photodetector 4, a filter may be provided, and the diode 2 may be formed in the recess of the substrate 1.
JP1551380A 1980-02-13 1980-02-13 Light emitting semiconductor device Pending JPS56112767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1551380A JPS56112767A (en) 1980-02-13 1980-02-13 Light emitting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1551380A JPS56112767A (en) 1980-02-13 1980-02-13 Light emitting semiconductor device

Publications (1)

Publication Number Publication Date
JPS56112767A true true JPS56112767A (en) 1981-09-05

Family

ID=11890888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1551380A Pending JPS56112767A (en) 1980-02-13 1980-02-13 Light emitting semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112767A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6223185A (en) * 1985-07-23 1987-01-31 Matsushita Electric Ind Co Ltd Hybrid optical integrated circuit device
JPS6223163A (en) * 1985-07-23 1987-01-31 Matsushita Electric Ind Co Ltd Hybrid optical ic device
JPS62146444A (en) * 1985-12-17 1987-06-30 Ibm Reading/writing head
JPS644084A (en) * 1987-05-30 1989-01-09 Samsung Semiconductor Tele Semiconductor light emitting device
JP2006310563A (en) * 2005-04-28 2006-11-09 Rohm Co Ltd Optical communication module

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6223185A (en) * 1985-07-23 1987-01-31 Matsushita Electric Ind Co Ltd Hybrid optical integrated circuit device
JPS6223163A (en) * 1985-07-23 1987-01-31 Matsushita Electric Ind Co Ltd Hybrid optical ic device
JPS62146444A (en) * 1985-12-17 1987-06-30 Ibm Reading/writing head
JPS644084A (en) * 1987-05-30 1989-01-09 Samsung Semiconductor Tele Semiconductor light emitting device
JP2006310563A (en) * 2005-04-28 2006-11-09 Rohm Co Ltd Optical communication module

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