JPS56112767A - Light emitting semiconductor device - Google Patents
Light emitting semiconductor deviceInfo
- Publication number
- JPS56112767A JPS56112767A JP1551380A JP1551380A JPS56112767A JP S56112767 A JPS56112767 A JP S56112767A JP 1551380 A JP1551380 A JP 1551380A JP 1551380 A JP1551380 A JP 1551380A JP S56112767 A JPS56112767 A JP S56112767A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- diode
- photodetector
- substrate
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 5
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Abstract
PURPOSE:To integrate a light emitting element, a photodetector, an IC and so forth by forming electrode wires on the surface of a semiconductor substrate formed with a light emitting element driving circuit and fixedly connecting the semiconductor light emitting element to the electrode wire. CONSTITUTION:An electrode leading wire is formed on the main surface of the Si semiconductor substrate 1, and the electrodes of the light emitting diode 2 are fixedly connected to the wire. A circuit 7 for driving the diode 2 is formed on the main surface of the substrate 1, and the circuit 7 and the diode 2 are connected via the above wire. A photodetector 4, an amplifier 8 for the photodetector and wires for connecting therebetween may be formed on the substrate 1 as required in the same manner as above. In order to prevent the interference of the diode 2 to the photodetector 4, a filter may be provided, and the diode 2 may be formed in the recess of the substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1551380A JPS56112767A (en) | 1980-02-13 | 1980-02-13 | Light emitting semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1551380A JPS56112767A (en) | 1980-02-13 | 1980-02-13 | Light emitting semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56112767A true JPS56112767A (en) | 1981-09-05 |
Family
ID=11890888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1551380A Pending JPS56112767A (en) | 1980-02-13 | 1980-02-13 | Light emitting semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56112767A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6223185A (en) * | 1985-07-23 | 1987-01-31 | Matsushita Electric Ind Co Ltd | Hybrid optical integrated circuit device |
JPS6223163A (en) * | 1985-07-23 | 1987-01-31 | Matsushita Electric Ind Co Ltd | Hybrid optical ic device |
JPS62146444A (en) * | 1985-12-17 | 1987-06-30 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Reading/writing head |
JPS644084A (en) * | 1987-05-30 | 1989-01-09 | Samsung Semiconductor Tele | Semiconductor light emitting device |
JP2006310563A (en) * | 2005-04-28 | 2006-11-09 | Rohm Co Ltd | Optical communication module |
CN113345875A (en) * | 2020-02-18 | 2021-09-03 | 喆光照明光电股份有限公司 | Stacked optocoupler structure with elimination or reduction of parasitic capacitance |
-
1980
- 1980-02-13 JP JP1551380A patent/JPS56112767A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6223185A (en) * | 1985-07-23 | 1987-01-31 | Matsushita Electric Ind Co Ltd | Hybrid optical integrated circuit device |
JPS6223163A (en) * | 1985-07-23 | 1987-01-31 | Matsushita Electric Ind Co Ltd | Hybrid optical ic device |
JPS62146444A (en) * | 1985-12-17 | 1987-06-30 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Reading/writing head |
JPS644084A (en) * | 1987-05-30 | 1989-01-09 | Samsung Semiconductor Tele | Semiconductor light emitting device |
JP2006310563A (en) * | 2005-04-28 | 2006-11-09 | Rohm Co Ltd | Optical communication module |
CN113345875A (en) * | 2020-02-18 | 2021-09-03 | 喆光照明光电股份有限公司 | Stacked optocoupler structure with elimination or reduction of parasitic capacitance |
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