JPS57157591A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57157591A
JPS57157591A JP4298681A JP4298681A JPS57157591A JP S57157591 A JPS57157591 A JP S57157591A JP 4298681 A JP4298681 A JP 4298681A JP 4298681 A JP4298681 A JP 4298681A JP S57157591 A JPS57157591 A JP S57157591A
Authority
JP
Japan
Prior art keywords
layer
type
impurity
semiconductor laser
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4298681A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4298681A priority Critical patent/JPS57157591A/en
Publication of JPS57157591A publication Critical patent/JPS57157591A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the deterioration of the characteristics of a semiconductor laser element due to irregular segregation of impurity by doping impurities of the same type in an active layer and a crystalline layer bonded to the active layer at the substrate side. CONSTITUTION:An n type clad layer 2' is produced by a liquid phase epitaxial growth method on an n type GaAs substrate 1, and an active layer 3' doped with the same impurity as the layer 2' is accumulated on the layer 2'. When the impurity constitution is thus set, even if the impurity from the layer 2' is mixed to the layer 3', the irregularity can be eliminated. Subsequently, a p type clad layer 4 and an n type cap layer 5 are sequentially laminated on the layer 3', and a p type diffused layer 6 is formed in the layer 5, thereby forming a current passage.
JP4298681A 1981-03-23 1981-03-23 Semiconductor laser element Pending JPS57157591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4298681A JPS57157591A (en) 1981-03-23 1981-03-23 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4298681A JPS57157591A (en) 1981-03-23 1981-03-23 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS57157591A true JPS57157591A (en) 1982-09-29

Family

ID=12651351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4298681A Pending JPS57157591A (en) 1981-03-23 1981-03-23 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57157591A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5060189A (en) * 1973-09-26 1975-05-23
JPS538090A (en) * 1976-07-09 1978-01-25 Sharp Corp Double hetero type laser element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5060189A (en) * 1973-09-26 1975-05-23
JPS538090A (en) * 1976-07-09 1978-01-25 Sharp Corp Double hetero type laser element

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