JPS57114229A - Manufacture of ohmic electrode - Google Patents

Manufacture of ohmic electrode

Info

Publication number
JPS57114229A
JPS57114229A JP32381A JP32381A JPS57114229A JP S57114229 A JPS57114229 A JP S57114229A JP 32381 A JP32381 A JP 32381A JP 32381 A JP32381 A JP 32381A JP S57114229 A JPS57114229 A JP S57114229A
Authority
JP
Japan
Prior art keywords
alloying
temperature
metal layer
sample
molecules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32381A
Other languages
Japanese (ja)
Other versions
JPS632135B2 (en
Inventor
Kazuyoshi Asai
Naoki Kato
Keisuke Shimada
Takashi Makimura
Katsuhiko Kurumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP32381A priority Critical patent/JPS57114229A/en
Publication of JPS57114229A publication Critical patent/JPS57114229A/en
Publication of JPS632135B2 publication Critical patent/JPS632135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a smooth and uniform ohmic electrode by a method wherein molecules absorbed mainly on the surface of a semiconductor and in a metal layer are removed before alloying is to be performed. CONSTITUTION:A means to remove the molecules absorbed on the semiconductor substrate and the molecules absorbed in the metal layer to obtain ohmic contact and to prevent balling up of the ohmic metal layer before alloying is to be performed is provided. For example, a sample is put in an alloying furnace, and alloying is performed in the next temperature program to obtain ohmic contact. At first, the temperature of sample is made to rise A to the alloying temperature or less, and is maintained B. By this maintenance B, the absorbed molecules secede from the surface of the semiconductor and from the inside of the metal layer. When the atmosphere of sample is depressurized to one atmospheric pressure or to a vacuum, secession thereof is promoted. After then, the temperature is made to rise C up to the alloying temperature, it is maintained D, and then it is cooled E.
JP32381A 1981-01-07 1981-01-07 Manufacture of ohmic electrode Granted JPS57114229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32381A JPS57114229A (en) 1981-01-07 1981-01-07 Manufacture of ohmic electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32381A JPS57114229A (en) 1981-01-07 1981-01-07 Manufacture of ohmic electrode

Publications (2)

Publication Number Publication Date
JPS57114229A true JPS57114229A (en) 1982-07-16
JPS632135B2 JPS632135B2 (en) 1988-01-18

Family

ID=11470689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32381A Granted JPS57114229A (en) 1981-01-07 1981-01-07 Manufacture of ohmic electrode

Country Status (1)

Country Link
JP (1) JPS57114229A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194765A (en) * 1975-02-19 1976-08-19 Kagobutsuhandotaino oomuseidenkyoku
JPS54152483A (en) * 1978-05-23 1979-11-30 Toshiba Corp Forming method for electrode of compound semiconductor light-emitting element
JPS55145366A (en) * 1979-04-27 1980-11-12 Mitsubishi Electric Corp Ohmic electrode of n-type semiconductor of groups 3-5 metals in periodic table and forming method of the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5194765A (en) * 1975-02-19 1976-08-19 Kagobutsuhandotaino oomuseidenkyoku
JPS54152483A (en) * 1978-05-23 1979-11-30 Toshiba Corp Forming method for electrode of compound semiconductor light-emitting element
JPS55145366A (en) * 1979-04-27 1980-11-12 Mitsubishi Electric Corp Ohmic electrode of n-type semiconductor of groups 3-5 metals in periodic table and forming method of the same

Also Published As

Publication number Publication date
JPS632135B2 (en) 1988-01-18

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