JPS5681935A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5681935A
JPS5681935A JP15949079A JP15949079A JPS5681935A JP S5681935 A JPS5681935 A JP S5681935A JP 15949079 A JP15949079 A JP 15949079A JP 15949079 A JP15949079 A JP 15949079A JP S5681935 A JPS5681935 A JP S5681935A
Authority
JP
Japan
Prior art keywords
substrate
heavy metal
constitution
semiconductor device
gettering treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15949079A
Other languages
Japanese (ja)
Inventor
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15949079A priority Critical patent/JPS5681935A/en
Publication of JPS5681935A publication Critical patent/JPS5681935A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase the effect of a gettering treatment of a heavy metal in a semiconductor device by a method wherein the distance between the circumference of an element forming region being desired to perform gettering treatment and a lattice defect part is shortened. CONSTITUTION:When a rated voltage is applied on an element part or a diffusion wiring formed on an Si substrate, O or Ar ions are selectively implanted or an area where a high concentration of any one of C, Si, B, P, and As is added to is provided at a place where it is separated to a point the depletion layer extending from said Si substrate does not reach. By this constitution, the heavy metal molecules existing in the substrate are taken in gradually into the defect frequently occuring region through the heat treatment process, and even if the Si substrate is made to have a large caliber, a warp is not generated and the gettering treatment of the heavy metal can be performed in a short time.
JP15949079A 1979-12-08 1979-12-08 Semiconductor device and its manufacture Pending JPS5681935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15949079A JPS5681935A (en) 1979-12-08 1979-12-08 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15949079A JPS5681935A (en) 1979-12-08 1979-12-08 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5681935A true JPS5681935A (en) 1981-07-04

Family

ID=15694898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15949079A Pending JPS5681935A (en) 1979-12-08 1979-12-08 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5681935A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58187985A (en) * 1982-04-27 1983-11-02 セイコーエプソン株式会社 Manufacture of semiconductor device
JPS58207642A (en) * 1982-05-28 1983-12-03 Fujitsu Ltd Semiconductor wafer
JPS6196740A (en) * 1984-10-18 1986-05-15 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58187985A (en) * 1982-04-27 1983-11-02 セイコーエプソン株式会社 Manufacture of semiconductor device
JPS58207642A (en) * 1982-05-28 1983-12-03 Fujitsu Ltd Semiconductor wafer
JPS6196740A (en) * 1984-10-18 1986-05-15 Matsushita Electronics Corp Manufacture of semiconductor device

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