JPS5585024A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5585024A JPS5585024A JP15976578A JP15976578A JPS5585024A JP S5585024 A JPS5585024 A JP S5585024A JP 15976578 A JP15976578 A JP 15976578A JP 15976578 A JP15976578 A JP 15976578A JP S5585024 A JPS5585024 A JP S5585024A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- supplied
- semiconductor substrates
- gas
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the irregular diffusion of impurity among semiconductor substrates by giving at least one revolution to the impurity gas supplying direction into a tube when diffusion the impurity into a plurality of semiconductor substrates by a tube opening system.
CONSTITUTION: A plurality of semiconductor substrates are disposed in a quartz tube 1, impurity gas is first fed in a direction X, and heat treated for predetermined time. Assuming that the sheet resistances Ps of the substrates 2a, 2b, 2c are PU, PL at the uppermost and lowermost substrate positions with respect to gas stream at this time, it becomes the relationship as designated by a curve A in the graph. When the impurity gas is supplied then in direction Y, the sheet resistance becomes the relationship as designated by a curve B. That is, the irregular sheet resistance when the impurity is supplied in the direction X cancels that when the impurity is supplied in the direction Y each other. The supplying direction may be inverted several times, and this method can be applied for etching, heat treating processes, etc. except for this diffusing treatment.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15976578A JPS5585024A (en) | 1978-12-21 | 1978-12-21 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15976578A JPS5585024A (en) | 1978-12-21 | 1978-12-21 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5585024A true JPS5585024A (en) | 1980-06-26 |
Family
ID=15700769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15976578A Pending JPS5585024A (en) | 1978-12-21 | 1978-12-21 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585024A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244088A (en) * | 2007-03-27 | 2008-10-09 | Naoetsu Electronics Co Ltd | Heat treatment method and heat treatment equipment |
-
1978
- 1978-12-21 JP JP15976578A patent/JPS5585024A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244088A (en) * | 2007-03-27 | 2008-10-09 | Naoetsu Electronics Co Ltd | Heat treatment method and heat treatment equipment |
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