JPH05347391A - Ferroelectric storage device - Google Patents
Ferroelectric storage deviceInfo
- Publication number
- JPH05347391A JPH05347391A JP4156456A JP15645692A JPH05347391A JP H05347391 A JPH05347391 A JP H05347391A JP 4156456 A JP4156456 A JP 4156456A JP 15645692 A JP15645692 A JP 15645692A JP H05347391 A JPH05347391 A JP H05347391A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- ferroelectric film
- electrode
- amorphous
- film made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 27
- 239000002178 crystalline material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、強誘電体記憶装置に係
り、半導体記憶装置構造、強誘電体膜構造、強誘電体記
憶装置の製造方法および強誘電体膜材料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferroelectric memory device, a semiconductor memory device structure, a ferroelectric film structure, a method of manufacturing a ferroelectric memory device, and a ferroelectric film material.
【０００２】[0002]
【従来の技術】従来、強誘電体記憶装置は、第１の電極
表面に結晶体から成る強誘電体膜が形成されて成り、該
強誘電体膜表面には第２の電極が形成されて成るのが通
例であった。2. Description of the Related Art Conventionally, a ferroelectric memory device has a ferroelectric film made of a crystalline material formed on the surface of a first electrode and a second electrode formed on the surface of the ferroelectric film. It was customary to consist of
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来技術
によると、強誘電体記憶装置にリーク電流が流れ、記憶
時間や記憶寿命が短く、書き込み回数が少ないと云う課
題や、誘電率の制御が困難である等の課題があった。However, according to the above-mentioned prior art, the problem that a leak current flows in the ferroelectric memory device, the storage time and the storage life are short, and the number of times of writing is small, and the control of the dielectric constant is not achieved. There were issues such as difficulty.
【０００４】本発明は、かかる従来技術の課題を解決す
る為の新しい強誘電体記憶装置構造、半導体記憶装置構
造、強誘電体膜構造、強誘電体記憶装置の製造方法およ
び強誘電体膜材料を提供する事を目的とする。The present invention is directed to a new ferroelectric memory device structure, a semiconductor memory device structure, a ferroelectric film structure, a method of manufacturing a ferroelectric memory device, and a ferroelectric film material for solving the problems of the prior art. The purpose is to provide.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成する為に、本発明は、強誘電体記憶装置に関
し、（１） 基板上の第１の電極表面に、結晶体から成
る第１の強誘電体膜とアモルファス体から成る第２の強
誘電体膜とを積層強誘電体膜として形成し、該積層強誘
電体膜表面に第２の電極を形成する手段を取る事、及び
（２） 半導体基板上の第１の電極表面に、結晶体から
成る第１の強誘電体膜とアモルファス体から成る第２の
強誘電体膜とを積層強誘電体膜として形成し、該積層強
誘電体膜表面に第２の電極を形成する手段を取る事、及
び（３） 基板上の第１の電極表面に、アモルファス体
から成る強誘電体膜と結晶体から成る強誘電体膜とを積
層強誘電体膜として形成し、該積層強誘電体膜表面に第
２の電極を形成する手段を取る事、及び（４） 基板上
の第１の電極表面に、結晶体から成る強誘電体膜とアモ
ルファス体から成る強誘電体膜と結晶体から成る強誘電
体膜とを積層強誘電体膜として形成し、該積層強誘電体
膜表面に第２の電極を形成する手段を取る事、及び
（５） 基板上の第１の電極表面に、アモルファス体か
ら成る強誘電体膜と結晶体から成る強誘電体膜とアモル
ファス体から成る強誘電体膜とを積層強誘電体膜として
形成し、該積層強誘電体膜表面に第２の電極を形成する
手段を取る事、及び（６） 結晶体から成る第１の強誘
電体膜とアモルファス体から成る第２の強誘電体膜とを
同一強誘電体材料と成す手段を取る事、及び（７） 結
晶体から成る第１の強誘電体膜とアモルファス体から成
る第２の強誘電体膜とを異なった強誘電体材料と成す手
段を取る事、等の手段を取る事等である。In order to solve the above problems and to achieve the above objects, the present invention relates to a ferroelectric memory device, which comprises (1) a crystalline substance formed on the surface of a first electrode on a substrate. A means for forming a first ferroelectric film made of the above and a second ferroelectric film made of an amorphous body as a laminated ferroelectric film and forming a second electrode on the surface of the laminated ferroelectric film is taken. And (2) forming a first ferroelectric film made of a crystalline body and a second ferroelectric film made of an amorphous body on the surface of the first electrode on the semiconductor substrate as a laminated ferroelectric film, A means for forming a second electrode on the surface of the laminated ferroelectric film is taken, and (3) a ferroelectric film made of an amorphous material and a ferroelectric material made of a crystalline material on the surface of the first electrode on the substrate. And a film as a laminated ferroelectric film and a second electrode is formed on the surface of the laminated ferroelectric film. And (4) a ferroelectric film made of a crystal, a ferroelectric film made of an amorphous body, and a ferroelectric film made of a crystal are laminated on the surface of the first electrode on the substrate. A means for forming a second electrode on the surface of the laminated ferroelectric film, and (5) a ferroelectric film made of an amorphous material and a crystalline material on the surface of the first electrode on the substrate. Forming a ferroelectric film made of (1) and a ferroelectric film made of an amorphous body as a laminated ferroelectric film, and forming a second electrode on the surface of the laminated ferroelectric film; and (6) Means for forming the first ferroelectric film made of a crystalline body and the second ferroelectric film made of an amorphous body with the same ferroelectric material, and (7) the first ferroelectric film made of a crystalline body The body film and the second ferroelectric film composed of an amorphous body are made of different ferroelectric materials. Taking the means, it is it like to take the means and the like.
【０００６】[0006]
【実施例】以下、実施例により本発明を詳述する。EXAMPLES The present invention will be described in detail below with reference to examples.
【０００７】図１は本発明の強誘電体記憶装置の一実施
例を示す要部の断面図である。すなわち、基板１０１の
表面には第１の電極１０２が形成され、該第１の電極１
０２上には第１の強誘電体結晶体（単結晶体または多結
晶体）１０３が形成され、該第１の強誘電体結晶体上に
は第１のアモルファス強誘電体１０４が形成され、該第
１のアモルファス強誘電体１０４上には第２の電極１０
５が形成されて成る。具体的には、セラミック、ガラ
ス、半導体あるいはプリント基板等の基板上に１ミクロ
ン厚の白金等から成る酸化され難い金属電極をスパッタ
法により形成し、ホトリゾグラフィとイオンエッチ等に
よりパターン形成し、次いでチタン酸バリュウムやジル
コニュウム・チタン酸鉛などの強誘電体を１ミクロン厚
程度に形成し、５００℃で３０分程度の酸素雰囲気中で
のアニールにより単結晶または多結晶の結晶体となし、
次いでやはりチタン酸バリュウムやジルコニュウム・チ
タン酸鉛などの強誘電体を１ミクロン厚程度に形成して
アモルファス強誘電体となし、次いで１ミクロン厚の白
金等から成る酸化され難い金属電極をスパッタ法により
形成する事により強誘電体記憶装置となす事が出来る。FIG. 1 is a sectional view of a main portion showing an embodiment of the ferroelectric memory device of the present invention. That is, the first electrode 102 is formed on the surface of the substrate 101, and the first electrode 1
02, a first ferroelectric crystal (single crystal or polycrystal) 103 is formed, and a first amorphous ferroelectric 104 is formed on the first ferroelectric crystal. A second electrode 10 is formed on the first amorphous ferroelectric material 104.
5 is formed. Specifically, a metal electrode made of platinum or the like having a thickness of 1 micron which is not easily oxidized is formed on a substrate such as ceramic, glass, a semiconductor or a printed circuit board by a sputtering method, and a pattern is formed by photolithography and ion etching. Next, a ferroelectric substance such as barium titanate, zirconium, lead titanate or the like is formed to a thickness of about 1 micron, and annealed in an oxygen atmosphere at 500 ° C. for about 30 minutes to form a single crystal or polycrystal,
Next, a ferroelectric substance such as barium titanate, zirconium, lead titanate, etc. is formed to a thickness of about 1 micron to form an amorphous ferroelectric substance, and then a metal electrode made of platinum or the like having a thickness of 1 micron which is not easily oxidized is sputtered. By forming it, it can be used as a ferroelectric memory device.
【０００８】図２は本発明の半導体記憶装置の一実施例
を示す要部の断面図である。すなわち、シリコン等から
成る半導体基板２０１の表面には１ミクロン厚程度のシ
リコン酸化膜から成る酸化膜２０２が形成され、ホト・
エッチングにより窓開けされた後、ＣＶＤ法により１ミ
クロン厚程度のシリコン窒化膜からなる窒化膜２０３を
形成し、該窒化膜２０３もホト・エッチングにより窓開
けされ下地シリコン基板２０１との間にコンタクト穴を
形成後、前記図１と同様に第１の電極２０４、第１の強
誘電体結晶体２０５、第１のアモルファス強誘電体２０
６及び第２の電極２０７が形成されて成る。ここに、シ
リコン窒化膜からなる窒化膜２０３は酸素アニール時の
シリコンとシリコン酸化膜界面準位密度の増加を防止す
る為に形成されたものである。FIG. 2 is a cross-sectional view of the essential portion showing an embodiment of the semiconductor memory device of the present invention. That is, an oxide film 202 made of a silicon oxide film having a thickness of about 1 micron is formed on the surface of a semiconductor substrate 201 made of silicon or the like.
After the window is opened by etching, a nitride film 203 made of a silicon nitride film having a thickness of about 1 micron is formed by the CVD method, and the nitride film 203 is also opened by photo etching to form a contact hole with the underlying silicon substrate 201. After forming, the first electrode 204, the first ferroelectric crystal body 205, and the first amorphous ferroelectric body 20 are formed in the same manner as in FIG.
6 and the second electrode 207 are formed. Here, the nitride film 203 made of a silicon nitride film is formed to prevent an increase in interface state density between silicon and a silicon oxide film during oxygen annealing.
【０００９】図３は本発明による強誘電体記憶装置の製
造方法の一実施例を示す要部の断面図である。すなわ
ち、基板３０１の表面には第１の電極３０２が形成さ
れ、該第１の電極３０２上には第１のアモルファス強誘
電体３０３が形成され、該第１のアモルファス強誘電体
３０３上には第１の強誘電体結晶体（単結晶体または多
結晶体）３０４が形成され、該第１の強誘電体結晶体上
には第２の電極３０５が形成されて成る。具体的には第
１のアモルファス強誘電体３０３は図１の実施例と同様
にスパッタ法により形成され、第１の強誘電体結晶体３
０４はやはりスパッタ法により形成された後、レーザ・
アニールやランプ・アニールの如く高速で表面層のみを
加熱する方法により結晶化される。FIG. 3 is a cross-sectional view of an essential part showing an embodiment of a method of manufacturing a ferroelectric memory device according to the present invention. That is, the first electrode 302 is formed on the surface of the substrate 301, the first amorphous ferroelectric substance 303 is formed on the first electrode 302, and the first amorphous ferroelectric substance 303 is formed on the first amorphous ferroelectric substance 303. A first ferroelectric crystal body (single crystal body or polycrystal body) 304 is formed, and a second electrode 305 is formed on the first ferroelectric crystal body. Specifically, the first amorphous ferroelectric substance 303 is formed by the sputtering method similarly to the embodiment of FIG. 1, and the first ferroelectric crystal substance 3 is formed.
04 is a laser after being formed by the sputtering method.
It is crystallized by a method of heating only the surface layer at a high speed such as annealing or lamp annealing.
【００１０】図４は本発明による強誘電体記憶装置の製
造方法の他の実施例を示す要部の断面図である。すなわ
ち、基板４０１の表面には第１の電極４０２が形成さ
れ、該第１の電極４０２上には第１のアモルファス強誘
電体４０３が形成され、該第１のアモルファス強誘電体
４０３上には第１の強誘電体結晶体（単結晶体または多
結晶体）４０４が形成され、該第１の強誘電体結晶体上
には第２のアモルファス強誘電体４０５が形成され、該
第２のアモルファス強誘電体４０５上には第２の電極４
０６が形成されて成る。具体的には第１のアモルファス
強誘電体４０３は図１の実施例と同様にスパッタ法によ
り形成され、第１の強誘電体結晶体４０４はやはりスパ
ッタ法により形成された後、レーザ・アニールやランプ
・アニールの如く高速で表面層のみを加熱する方法によ
り結晶化され、第２のアモルファス強誘電体４０５はや
はりスパッタ法により形成されて成る。FIG. 4 is a cross-sectional view of essential parts showing another embodiment of the method of manufacturing a ferroelectric memory device according to the present invention. That is, the first electrode 402 is formed on the surface of the substrate 401, the first amorphous ferroelectric substance 403 is formed on the first electrode 402, and the first amorphous ferroelectric substance 403 is formed on the first amorphous ferroelectric substance 403. A first ferroelectric crystal (single crystal or polycrystal) 404 is formed, a second amorphous ferroelectric 405 is formed on the first ferroelectric crystal, and a second amorphous ferroelectric 405 is formed. The second electrode 4 is formed on the amorphous ferroelectric substance 405.
06 are formed. Specifically, the first amorphous ferroelectric substance 403 is formed by the sputtering method similarly to the embodiment of FIG. 1, and the first ferroelectric crystal body 404 is also formed by the sputtering method, and then laser annealing or The second amorphous ferroelectric substance 405 is also crystallized by a method of heating only the surface layer at a high speed such as lamp annealing, and is also formed by the sputtering method.
【００１１】図５は本発明の強誘電体記憶装置の製造方
法のその他の実施例を示す要部の断面図である。すなわ
ち、基板５０１の表面には第１の電極５０２が形成さ
れ、該第１の電極５０２上には第１の強誘電体結晶体
（単結晶体または多結晶体）５０３が形成され、該第１
の強誘電体結晶体上には第１のアモルファス強誘電体５
０４が形成され、該第１のアモルファス強誘電体５０４
上には第２の強誘電体結晶体５０６が形成され、該第２
の強誘電体結晶体５０６上には第２の電極５０６が形成
されて成る。具体的には第１のアモルファス強誘電体５
０４は図１の実施例と同様にスパッタ法により形成さ
れ、第２の強誘電体結晶体５０５はやはりスパッタ法に
より形成された後、レーザ・アニールやランプ・アニー
ルの如く高速で短時間（１分以内）の表面層のみを加熱
する方法により結晶化されて成る。FIG. 5 is a cross-sectional view of essential parts showing another embodiment of the method for manufacturing a ferroelectric memory device of the present invention. That is, the first electrode 502 is formed on the surface of the substrate 501, and the first ferroelectric crystal body (single crystal body or polycrystalline body) 503 is formed on the first electrode 502. 1
The first amorphous ferroelectric 5 on the ferroelectric crystal of
04 is formed, and the first amorphous ferroelectric substance 504 is formed.
A second ferroelectric crystal body 506 is formed on the upper surface of the second ferroelectric crystal body 506.
The second electrode 506 is formed on the ferroelectric crystal body 506. Specifically, the first amorphous ferroelectric 5
04 is formed by the sputtering method as in the embodiment of FIG. 1, and the second ferroelectric crystal body 505 is also formed by the sputtering method, and then the second ferroelectric crystal body 505 is formed at a high speed for a short time (1 by laser annealing or lamp annealing). Within minutes) and is crystallized by a method of heating only the surface layer.
【００１２】尚、結晶体から成る第１の強誘電体膜とア
モルファス体から成る第２の強誘電体膜とを同一強誘電
体材料と成す事ができる。すなわち、第１の強誘電体結
晶体膜とアモルファス体から成る第２の強誘電体膜とを
チタン酸バリュウムやジルコニュウム・チタン酸鉛等の
いずれか等の同一材料と成す事が出来る。The first ferroelectric film made of a crystalline material and the second ferroelectric film made of an amorphous material can be made of the same ferroelectric material. That is, the first ferroelectric crystal film and the second ferroelectric film made of an amorphous material can be made of the same material such as barium titanate, zirconium or lead titanate.
【００１３】又、結晶体から成る第１の強誘電体膜とア
モルファス体から成る第２の強誘電体膜とを異なった強
誘電体材料と成す事ができる。すなわち、第１の強誘電
体結晶体膜とアモルファス体から成る第２の強誘電体膜
とをチタン酸バリュウムやジルコニュウム・チタン酸鉛
等のいずれか等の異なった材料と成す事が出来る。Further, the first ferroelectric film made of a crystalline material and the second ferroelectric film made of an amorphous material can be made of different ferroelectric materials. That is, the first ferroelectric crystal film and the second ferroelectric film made of an amorphous material can be made of different materials such as barium titanate, zirconium and lead titanate.
【００１４】更に、強誘電体結晶体膜を異なった材料の
積層構造としたり、あるいはアモルファス強誘電体膜も
異なった材料の積層構造とする事も出来、いわゆるヘテ
ロジニアスな強誘電体接合構造も本発明の範中に入る事
となる。この様なヘテロジニアスな強誘電体接合構造は
誘電率の設計に自由度を増す効果がある。Further, the ferroelectric crystal film may have a laminated structure of different materials, or the amorphous ferroelectric film may have a laminated structure of different materials, and a so-called heterogeneous ferroelectric junction structure is also possible. This falls within the scope of the present invention. Such a heterogeneous ferroelectric junction structure has the effect of increasing the degree of freedom in designing the dielectric constant.
【００１５】[0015]
【発明の効果】本発明により、記憶時間や記憶寿命が長
く、書き込み回数が多く、誘電率の制御が容易な強誘電
体記憶装置構造、半導体記憶装置構造、強誘電体膜構
造、強誘電体記憶装置の製造方法および強誘電体膜材料
を提供する事が出来る効果がある。According to the present invention, a ferroelectric memory device structure, a semiconductor memory device structure, a ferroelectric film structure, and a ferroelectric substance, which have a long storage time, a long storage life, a large number of times of writing, and whose permittivity can be easily controlled. There is an effect that a manufacturing method of a memory device and a ferroelectric film material can be provided.
【００１６】[0016]
【図１】 強誘電体記憶装置の一実施例を示す要部の断
面図である。FIG. 1 is a cross-sectional view of essential parts showing an embodiment of a ferroelectric memory device.
【図２】 半導体記憶装置の一実施例を示す要部の断面
図である。FIG. 2 is a cross-sectional view of essential parts showing an embodiment of a semiconductor memory device.
【図３】 強誘電体記憶装置の製造方法の一実施例を示
す要部の断面図である。FIG. 3 is a cross-sectional view of essential parts showing an embodiment of a method of manufacturing a ferroelectric memory device.
【図４】 強誘電体記憶装置の製造方法の他の実施例を
示す要部の断面図である。FIG. 4 is a cross-sectional view of essential parts showing another embodiment of the method of manufacturing the ferroelectric memory device.
【図５】 強誘電体記憶装置の製造方法のその他の実施
例を示す要部の断面図である。FIG. 5 is a cross-sectional view of essential parts showing another embodiment of the method of manufacturing the ferroelectric memory device.
１０１、３０１、４０１、５０１・・・基板 １０２、２０４、３０２、４０２、５０２・・・第１の
電極 １０３、２０５、３０４、４０４、５０３・・・第１の
強誘電体結晶体 １０４、２０６、３０３、４０３、５０４・・・第１の
アモルファス強誘電体 １０５、２０７、３０５、４０６、５０６・・・第２の
電極 ２０１・・・半導体基板 ２０２・・・酸化膜 ２０４・・・窒化膜 ４０５・・・第２のアモルファス強誘電体 ５０５・・・第２の強誘電体結晶体101, 301, 401, 501 ... Substrate 102, 204, 302, 402, 502 ... First electrode 103, 205, 304, 404, 503 ... First ferroelectric crystal body 104, 206 , 303, 403, 504 ... First amorphous ferroelectric material 105, 207, 305, 406, 506 ... Second electrode 201 ... Semiconductor substrate 202 ... Oxide film 204 ... Nitride film 405 ... Second amorphous ferroelectric body 505 ... Second ferroelectric crystal body
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 29/792 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 29/792
Claims (7)
ら成る第１の強誘電体膜とアモルファス体から成る第２
の強誘電体膜とが積層強誘電体膜として形成され、該積
層強誘電体膜表面には第２の電極が形成されて成る事を
特徴とする強誘電体記憶装置。1. A first ferroelectric film made of a crystalline material and a second ferroelectric film made of an amorphous material on the surface of the first electrode on the substrate.
And a ferroelectric film formed as a laminated ferroelectric film, and a second electrode is formed on the surface of the laminated ferroelectric film.
晶体から成る第１の強誘電体膜とアモルファス体から成
る第２の強誘電体膜とが積層強誘電体膜として形成さ
れ、該積層強誘電体膜表面には第２の電極が形成されて
成る事を特徴とする強誘電体記憶装置。2. A first ferroelectric film made of a crystalline material and a second ferroelectric film made of an amorphous material are formed as a laminated ferroelectric film on the surface of the first electrode on the semiconductor substrate. A ferroelectric memory device characterized in that a second electrode is formed on the surface of the laminated ferroelectric film.
ァス体から成る強誘電体膜と結晶体から成る強誘電体膜
とが積層強誘電体膜として形成され、該積層強誘電体膜
表面には第２の電極が形成されて成る事を特徴とする強
誘電体記憶装置。3. A ferroelectric film made of an amorphous body and a ferroelectric film made of a crystal are formed as a laminated ferroelectric film on the surface of the first electrode on the substrate, and the laminated ferroelectric film. A ferroelectric memory device characterized in that a second electrode is formed on the surface.
ら成る強誘電体膜とアモルファス体から成る強誘電体膜
と結晶体から成る強誘電体膜とが積層強誘電体膜として
形成され、該積層強誘電体膜表面には第２の電極が形成
されて成る事を特徴とする強誘電体記憶装置。4. A ferroelectric film made of a crystalline material, a ferroelectric film made of an amorphous material, and a ferroelectric film made of a crystalline material are formed as a laminated ferroelectric film on the surface of the first electrode on the substrate. A ferroelectric memory device formed by forming a second electrode on the surface of the laminated ferroelectric film.
ァス体から成る強誘電体膜と結晶体から成る強誘電体膜
とアモルファス体から成る強誘電体膜とが積層強誘電体
膜として形成され、該積層強誘電体膜表面には第２の電
極が形成されて成る事を特徴とする強誘電体記憶装置。5. A laminated ferroelectric film comprising a ferroelectric film made of an amorphous body, a ferroelectric film made of a crystal body, and a ferroelectric film made of an amorphous body on the surface of the first electrode on the substrate. A ferroelectric memory device formed by forming a second electrode on the surface of the laminated ferroelectric film.
ルファス体から成る第２の強誘電体膜とが同一強誘電体
材料と成す事を特徴とする強誘電体記憶装置。6. A ferroelectric memory device, wherein the first ferroelectric film made of a crystalline material and the second ferroelectric film made of an amorphous material are made of the same ferroelectric material.
ルファス体から成る第２の強誘電体膜とが異なった強誘
電体材料と成す事を特徴とする強誘電体記憶装置。7. A ferroelectric memory device characterized in that the first ferroelectric film made of a crystalline material and the second ferroelectric film made of an amorphous material are made of different ferroelectric materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4156456A JPH05347391A (en) | 1992-06-16 | 1992-06-16 | Ferroelectric storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4156456A JPH05347391A (en) | 1992-06-16 | 1992-06-16 | Ferroelectric storage device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11170261A Division JP2000031403A (en) | 1999-06-16 | 1999-06-16 | Ferroelectric memory device and semiconductor memory device |
| JP11170260A Division JP2000031402A (en) | 1999-06-16 | 1999-06-16 | Ferroelectric memory device and semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05347391A true JPH05347391A (en) | 1993-12-27 |
Family
ID=15628151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4156456A Pending JPH05347391A (en) | 1992-06-16 | 1992-06-16 | Ferroelectric storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05347391A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708284A (en) * | 1995-03-20 | 1998-01-13 | Sharp Kabushiki Kaisha | Non-volatile random access memory |
| US5854499A (en) * | 1994-07-12 | 1998-12-29 | Texas Instruments Incorporated | Ferroelectric film capacitor with intergranular insulation |
| KR100265846B1 (en) * | 1997-06-30 | 2000-10-02 | 김영환 | A method for fabricating ferroelectric capacitor in semiconductor device |
| US6143597A (en) * | 1995-07-14 | 2000-11-07 | Matsushita Electronics Corporation | Method of manufacturing capacitor included in semiconductor device and the capacitor thereof |
| JP2003133605A (en) * | 2001-10-26 | 2003-05-09 | Matsushita Electric Ind Co Ltd | Ferroelectric substance element as well as actuator, ink jet head and ink jet recording device employing the element |
| JP2008060599A (en) * | 2007-10-22 | 2008-03-13 | Matsushita Electric Ind Co Ltd | Ferroelectric element and actuator using the same, ink jet head, ink jet record device, and method of manufacturing ferroelectric element |
| JPWO2006095425A1 (en) * | 2005-03-10 | 2008-08-14 | 富士通株式会社 | Nonvolatile semiconductor memory device and manufacturing method thereof |
| US7473565B2 (en) | 2002-05-28 | 2009-01-06 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| WO2009090979A1 (en) * | 2008-01-18 | 2009-07-23 | Tokyo Electron Limited | Capacitor, semiconductor device, method for manufacturing the capacitor, and method for manufacturing the semiconductor device |
| US7960228B2 (en) | 2006-11-14 | 2011-06-14 | Fujitsu Semiconductor Limited | Methods of making a ferroelectric memory device having improved interfacial characteristics |
| JPWO2009104621A1 (en) * | 2008-02-19 | 2011-06-23 | 東京エレクトロン株式会社 | Method for forming Sr-Ti-O-based film and storage medium |
-
1992
- 1992-06-16 JP JP4156456A patent/JPH05347391A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854499A (en) * | 1994-07-12 | 1998-12-29 | Texas Instruments Incorporated | Ferroelectric film capacitor with intergranular insulation |
| US5708284A (en) * | 1995-03-20 | 1998-01-13 | Sharp Kabushiki Kaisha | Non-volatile random access memory |
| US6143597A (en) * | 1995-07-14 | 2000-11-07 | Matsushita Electronics Corporation | Method of manufacturing capacitor included in semiconductor device and the capacitor thereof |
| KR100265846B1 (en) * | 1997-06-30 | 2000-10-02 | 김영환 | A method for fabricating ferroelectric capacitor in semiconductor device |
| JP4578744B2 (en) * | 2001-10-26 | 2010-11-10 | パナソニック株式会社 | Ferroelectric element, actuator using the same, ink jet head, and ink jet recording apparatus |
| JP2003133605A (en) * | 2001-10-26 | 2003-05-09 | Matsushita Electric Ind Co Ltd | Ferroelectric substance element as well as actuator, ink jet head and ink jet recording device employing the element |
| US7473565B2 (en) | 2002-05-28 | 2009-01-06 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| JPWO2006095425A1 (en) * | 2005-03-10 | 2008-08-14 | 富士通株式会社 | Nonvolatile semiconductor memory device and manufacturing method thereof |
| JP4818255B2 (en) * | 2005-03-10 | 2011-11-16 | 富士通株式会社 | Method for manufacturing nonvolatile semiconductor memory device |
| US7960228B2 (en) | 2006-11-14 | 2011-06-14 | Fujitsu Semiconductor Limited | Methods of making a ferroelectric memory device having improved interfacial characteristics |
| US8344434B2 (en) | 2006-11-14 | 2013-01-01 | Fujitsu Semiconductor Limited | Semiconductor device having ferroelectric capacitor |
| JP2008060599A (en) * | 2007-10-22 | 2008-03-13 | Matsushita Electric Ind Co Ltd | Ferroelectric element and actuator using the same, ink jet head, ink jet record device, and method of manufacturing ferroelectric element |
| WO2009090979A1 (en) * | 2008-01-18 | 2009-07-23 | Tokyo Electron Limited | Capacitor, semiconductor device, method for manufacturing the capacitor, and method for manufacturing the semiconductor device |
| JPWO2009104621A1 (en) * | 2008-02-19 | 2011-06-23 | 東京エレクトロン株式会社 | Method for forming Sr-Ti-O-based film and storage medium |
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