JPH0454375B2 - - Google Patents

Info

Publication number
JPH0454375B2
JPH0454375B2 JP5199282A JP5199282A JPH0454375B2 JP H0454375 B2 JPH0454375 B2 JP H0454375B2 JP 5199282 A JP5199282 A JP 5199282A JP 5199282 A JP5199282 A JP 5199282A JP H0454375 B2 JPH0454375 B2 JP H0454375B2
Authority
JP
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5199282A
Other versions
JPS58168278A (en )
Inventor
Yasuo Nakai
Hiroshi Nozawa
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
JP5199282A 1982-03-30 1982-03-30 Expired - Lifetime JPH0454375B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5199282A JPH0454375B2 (en) 1982-03-30 1982-03-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5199282A JPH0454375B2 (en) 1982-03-30 1982-03-30

Publications (2)

Publication Number Publication Date
JPS58168278A true JPS58168278A (en) 1983-10-04
JPH0454375B2 true JPH0454375B2 (en) 1992-08-31

Family

ID=12902344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5199282A Expired - Lifetime JPH0454375B2 (en) 1982-03-30 1982-03-30

Country Status (1)

Country Link
JP (1) JPH0454375B2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053082A (en) * 1983-09-02 1985-03-26 Seiko Epson Corp Thin-film transistor
JPS60134474A (en) * 1983-12-22 1985-07-17 Seiko Epson Corp Mos type amorphous semiconductor device
JPS60213062A (en) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd Manufacture of thin-film transistor
JPH0752776B2 (en) * 1985-01-24 1995-06-05 シャープ株式会社 A thin film transistor and its manufacturing method
JPS62205664A (en) * 1986-03-06 1987-09-10 Matsushita Electric Ind Co Ltd Manufacture of thin film transistor
JPH0680684B2 (en) * 1986-12-22 1994-10-12 日本電気株式会社 A method of manufacturing a thin film transistor
JPH0680685B2 (en) * 1986-12-29 1994-10-12 日本電気株式会社 Thin film transistor and a method of manufacturing the same
JPH0622246B2 (en) * 1987-07-22 1994-03-23 日本電気株式会社 A method of manufacturing a thin film transistor
JPH0611060B2 (en) * 1987-08-21 1994-02-09 日本電気株式会社 A method of manufacturing a thin film transistor
JPH04269837A (en) * 1991-02-26 1992-09-25 Sharp Corp Manufacture of thin-film transistor
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH0555254A (en) * 1991-08-27 1993-03-05 Sharp Corp Thin film transistor and manufacture thereof
JP2653312B2 (en) * 1992-02-28 1997-09-17 松下電器産業株式会社 Method of manufacturing a thin film transistor
JP3173854B2 (en) * 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 A thin film insulated gate semiconductor device a semiconductor device manufacturing method and was created
JP3173926B2 (en) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 Preparation method and a semiconductor device of a thin film insulated gate semiconductor device
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
JPH08248445A (en) * 1995-12-22 1996-09-27 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
DE69839005T2 (en) * 1997-10-29 2009-01-08 Xerox Corp., Rochester A method for manufacturing a thin film field effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821864A (en) * 1981-07-31 1983-02-08 Seiko Epson Corp Active matrix substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821864A (en) * 1981-07-31 1983-02-08 Seiko Epson Corp Active matrix substrate

Also Published As

Publication number Publication date Type
JPS58168278A (en) 1983-10-04 application

Similar Documents

Publication Publication Date Title
DE3203862C2 (en)
DE3211188C2 (en)
DE3205271C2 (en)
DE3206678C2 (en)
DE3200816C2 (en)
DE3207612C2 (en)
DE3203023C2 (en)
DE3208770C2 (en)
DE3209871C2 (en)
DE3201715C2 (en)
DE3208836C2 (en)
DE3204666C2 (en)
DE3204529C2 (en)
DE3202334C2 (en)
DE3202315C2 (en)
DE3205504C2 (en)
DE3205681C2 (en)
DE3208132C2 (en)
DE3206910C2 (en)
DE3208811C2 (en)
DE3210678C2 (en)
DE3200755C2 (en)
DE3203399C2 (en)