JPS5524438A - Method of manufacturing semiconductor element - Google Patents

Method of manufacturing semiconductor element

Info

Publication number
JPS5524438A
JPS5524438A JP9689978A JP9689978A JPS5524438A JP S5524438 A JPS5524438 A JP S5524438A JP 9689978 A JP9689978 A JP 9689978A JP 9689978 A JP9689978 A JP 9689978A JP S5524438 A JPS5524438 A JP S5524438A
Authority
JP
Japan
Prior art keywords
spattering
thin film
gold thin
thickness
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9689978A
Other languages
Japanese (ja)
Inventor
Mitsuo Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9689978A priority Critical patent/JPS5524438A/en
Publication of JPS5524438A publication Critical patent/JPS5524438A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a quality gold thin film constant in thickness and strong in adhesion with substrates by carrying out high-frequency back spattering and spattering to form a gold thin film continuously without breaking vacuum.
CONSTITUTION: An epitaxial layer 2, for example, and a given conductive area 6 are formed on a semiconductor substrate 1 and after the back of substrate 1 is exposed, the wafer 3 is arranged with its back 8 exposed in a spattering device and subjected to vacuum exhaust until a desired pressure is obtained. Next, high-frequency back spattering is carried out and the back 8 is subjected to etching. Then, a gold thin film is formed on the back 8 continuously without breaking vacuum through spattering. The result is such that the gold thin film thus formed is strong in adhesion with the substrate 1 and controllable comparatively easy for the film thickness. Therefore a quality gold thin film constant in thickness and compact is obtainable as a source for the life time of minority carrier.
COPYRIGHT: (C)1980,JPO&Japio
JP9689978A 1978-08-08 1978-08-08 Method of manufacturing semiconductor element Pending JPS5524438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9689978A JPS5524438A (en) 1978-08-08 1978-08-08 Method of manufacturing semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9689978A JPS5524438A (en) 1978-08-08 1978-08-08 Method of manufacturing semiconductor element

Publications (1)

Publication Number Publication Date
JPS5524438A true JPS5524438A (en) 1980-02-21

Family

ID=14177210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9689978A Pending JPS5524438A (en) 1978-08-08 1978-08-08 Method of manufacturing semiconductor element

Country Status (1)

Country Link
JP (1) JPS5524438A (en)

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