JPS6384074A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS6384074A JPS6384074A JP61228797A JP22879786A JPS6384074A JP S6384074 A JPS6384074 A JP S6384074A JP 61228797 A JP61228797 A JP 61228797A JP 22879786 A JP22879786 A JP 22879786A JP S6384074 A JPS6384074 A JP S6384074A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- semiconductor film
- type layer
- light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 abstract description 38
- 238000009792 diffusion process Methods 0.000 abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000470 constituent Substances 0.000 abstract description 4
- 239000002356 single layer Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 21
- 230000006866 deterioration Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
（イ） 肢業上の利用分野
本発明は太陽光等の光照射を受けると起電力を発生する
光起電力装置（二関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of industrial application The present invention relates to a photovoltaic device (2) that generates an electromotive force when irradiated with light such as sunlight.
−１従来の技術
この授光起電力装置（二於いてＳｉＨ４，Ｓｉ２Ｈ６，
８１Ｆａ等のシリコン化合物ガスを原料ガスとして得ら
れる非晶質シリコンを主体としたものが現存する。斯る
非晶質シリコンを主体とした光起電力装置は、太渚光発
電に要求さｎる大面積化と低コスト化を可能とする利点
を備える反面。-1 Conventional technology This photovoltaic device (2) SiH4, Si2H6,
Currently, there are those mainly made of amorphous silicon obtained using a silicon compound gas such as 81Fa as a raw material gas. On the other hand, such a photovoltaic device mainly made of amorphous silicon has the advantage of making it possible to have a large area and reduce costs, which are required for Taiyuan photovoltaic power generation.
経時的な光電変換効率の劣化が著しい。The photoelectric conversion efficiency deteriorates significantly over time.
光電変換効率の経時劣化は１強い光照射Ｃ：よる光劣化
と、高温状態Ｃ二よる熱劣化の２種類が存花することが
知られている（日経マイクロデバイス。It is known that there are two types of deterioration of photoelectric conversion efficiency over time: photodeterioration caused by intense light irradiation (1) and thermal deterioration caused by high-temperature conditions C2 (Nikkei Microdevice).
１９８６年２月号第８１頁〜ＷＩ９！１頁参照）。(See February 1986 issue, pages 81 to WI9!1).
（／−Ｊ 発明が解決しようとする問題点本発明は斯る
光電変換効率の経時劣化の内、高温状態（−よる熱劣化
を解決しようとするものである。(/-J Problems to be Solved by the Invention The present invention attempts to solve the problem of thermal deterioration caused by high temperature conditions (-) among the deterioration of photoelectric conversion efficiency over time.
に）問題点を解決するための手段
本発明は上記問題点を解決するため（−１少なくとも１
つの半導体接合を備える半導体膜と、該半導体膜の光入
射（１）１）に設けられた受光面電極と、上把手導体膜
の背面側に設けられた背面電極と、からなる光起電力装
置であって、上記半導体膜は非晶質シリコンを主体とす
ると共に、上記背面電極と接する側の不純物層はその不
純物層内Ｃ：平均含有率１ａｔ、％〜２ＯＮｍ−チ の
窒素を含むｎ型層であることを特徴とする。2) Means for Solving the Problems The present invention solves the above problems by (-1 at least 1
A photovoltaic device comprising a semiconductor film having two semiconductor junctions, a light-receiving surface electrode provided at the light incidence (1) 1) of the semiconductor film, and a back electrode provided on the back side of the upper handle conductor film. The semiconductor film is mainly made of amorphous silicon, and the impurity layer on the side in contact with the back electrode is an n-type film containing nitrogen at an average content of C: 1at, % to 2ONm-chi in the impurity layer. It is characterized by being a layer.
（ホ）作 用
上述の如く窒素の平均含有率が１ａｔ−チ〜２０ａｔ、
％ のｎ型層を背面電極と接する側の不純物層として用
いること（；よって、斯るｎ型層は背面電極構成元素の
高温状態に於ける拡散を阻止する。(e) Effect As mentioned above, the average nitrogen content is 1 at-chi to 20 at,
% of the n-type layer is used as an impurity layer on the side in contact with the back electrode; therefore, such an n-type layer prevents the diffusion of elements constituting the back electrode at high temperatures.
（へ）実施例
＄１）！ｉｌ！、１は本発明光起電力装置の一実施例を
示し。(to) Example $1)! Il! , 1 shows an embodiment of the photovoltaic device of the present invention.
（１）はガラス等の透光性且つ絶縁性の基板、（２）は
工ＴＯや８ｎ０２＋二代表される透光性導電酸化物（Ｔ
ｏｏ ）の単層或いは積層構造の受光固型ｔ＝Ｍ、（３
）は該受光面電極（２）を通過した光の照射を受ける非
晶質シリコンを主体とする半導体膜、（４）は該半導体
膜（３）の背面側（：設けられた金属或いは’Ｉ’００
／金属の背面電極である。上記半導体膜（３）は１つの
ｐｉｎ接合を形成すべく１元入射側である受光面電極（
２；と接して窓層として作用するワイドバンドギャップ
材料の非晶質シリコンカーバイドのｐ型層（３ｐ）と、
該ｐ型層（５ｐ）を透過した光の照射を受けると主とし
て電子及び正孔の光キャリアを発生する非晶質シリコン
のノンドープ（１型）層（５１）と、一端面がノンドー
プ層（３１）と接し他端面が背面電極（４）と接する窒
素の平均含有率が１ａｔ−％〜２Ｑａｔ−チの非晶質シ
リコンナイトライドのｎ型層（５ｎ）と、からなってい
る。(1) is a transparent and insulating substrate such as glass, and (2) is a transparent conductive oxide (T
oo ) single-layer or laminated structure light-receiving solid t=M, (3
) is a semiconductor film mainly made of amorphous silicon that is irradiated with light that has passed through the light-receiving surface electrode (2), and (4) is a semiconductor film mainly made of amorphous silicon that is irradiated with light that has passed through the light-receiving surface electrode (2). '00
/Metal back electrode. The semiconductor film (3) is attached to the light-receiving surface electrode (
2; a p-type layer (3p) of amorphous silicon carbide, which is a wide bandgap material, and acts as a window layer in contact with;
A non-doped (type 1) layer (51) of amorphous silicon that generates photocarriers mainly electrons and holes when irradiated with light transmitted through the p-type layer (5p), and a non-doped layer (31) on one end surface. ) and an n-type layer (5n) of amorphous silicon nitride having an average nitrogen content of 1 at-% to 2 Qat-1, the other end surface of which is in contact with the back electrode (4).
斯るｐｉｎ接合を備える非晶質シリコンを主体として半
導体膜（３）は５例えば１′５．５６ＭＨｚの高周波電
諒１：よるプラズマＯ”／Ｄ法Ｃ二よシ得られる。A semiconductor film (3) mainly made of amorphous silicon having such a pin junction can be obtained using a plasma O''/D method C2 using a high frequency wave of, for example, 1'5.56 MHz.
代表的な反応条件及び各膜の膜厚は以下の通りである。Typical reaction conditions and film thicknesses of each film are as follows.
共通反応条件 ０ 基板温度：２００〜５００℃ ０ 高周波パワｍ：１０〜５ＯＷ Ｏ反応圧カニ０．１〜０．５ｔｏｒｒ 而して１本発明の特徴は、 Ａｔ、Ａｇ、Ａｕ。Common reaction conditions 0 Substrate temperature: 200-500℃ 0 High frequency power m: 10~5OW O reaction pressure 0.1 to 0.5 torr One feature of the present invention is At, Ag, and Au.
Ｔ ＯＯ／ Ａ ｇ 、 Ａ ｌ ／ Ｔ ｉ等の単層
或いは積層構造からなる背面電極（４）と接する側の不
純物層として、その不純物層の総合膜厚中１−平均含有
率１ａｔ・Ｓ 〜２０１ｔ、％の窒素を含むｎ型ＩＩ（
３ｎ）を用いたところにある。第２図は本発明光起電力
装置と従来の光起電力装置の１５０℃の高温状態Ｃ：於
ける光電変換効率の経時変化、即ち熱劣化特性を調べた
ものである。本発明及び従来の光起電力装置の構造は第
１図Ｃユ示した如く一つのｐｉｎ接合を備えた非晶質シ
リコンを主体とする半導体膜（３）を、Ｔｏｏの受光面
電極（２）とＡｆの背面電極（４）で挾んだものでらシ
、Ａｌの背面電極（４）と接するｎ型ｆｆ１（３ｎ）と
して本発明装置は窒素含有率１０ａｔ、％ の非晶質
シリコンナイトライドを用い。As an impurity layer on the side in contact with the back electrode (4) consisting of a single layer or a laminated structure such as TOO/Ag, Al/Ti, etc., the impurity layer has an average content of 1at.S in the total thickness of the impurity layer. 201t, n-type II containing % nitrogen (
3n) is used. FIG. 2 shows an investigation of the change over time in photoelectric conversion efficiency, that is, the thermal deterioration characteristics, of the photovoltaic device of the present invention and the conventional photovoltaic device at a high temperature of 150° C. (C:). The structure of the present invention and the conventional photovoltaic device is as shown in FIG. The device of the present invention uses amorphous silicon nitride with a nitrogen content of 10 at% as the n-type ff1 (3n) in contact with the Al back electrode (4). using.
従来装置は窒素を含まない非晶質シリコンを使用した以
外は同一構成とした。そして、光ｔＣ変換効率はそれぞ
れ初期値を１として規格化した。斯る測定の結果、１０
時間経過に於ける光電変換効率の劣化率は本発明装置Ｃ
二あっては１０％以下であったのに対し、従来装置では
約７０チ低下した。The conventional device had the same configuration except that nitrogen-free amorphous silicon was used. The optical tC conversion efficiencies were each normalized with an initial value of 1. As a result of such measurement, 10
The deterioration rate of photoelectric conversion efficiency over time is the deterioration rate of the device C of the present invention.
While it was less than 10% with the conventional device, it was about 70 inches lower with the conventional device.
従って、非晶質シリコンナイトクィドは非晶質シリコン
（ユ較べ熱劣化に極めて有効的であることが判明した。Therefore, it has been found that amorphous silicon nightquid is extremely effective against thermal deterioration compared to amorphous silicon.
即ち、熱劣化の主たる要因は背面電極（４）の構成元素
が高温状態に置かれたためＣ二手導体膜（３）中を拡散
し、遂には受光面電極ｆ２１ Ｃ到達して部分的な短絡
を形成することＩ：ある。In other words, the main cause of thermal deterioration is that the constituent elements of the back electrode (4) are placed in a high temperature state, so they diffuse through the C two-handed conductor film (3) and eventually reach the light receiving surface electrode f21 C, causing a partial short circuit. Forming I: Yes.
ところで１本発明装置のｎ型層ｉｎ）は上述の如く非晶
質シリコンナイトライドからなり、その膜中にはシリコ
ン（Ｓｌ）と窒素（Ｎｌとの結合（Ｓｉ−Ｎ）があり、
−万、従来装置のｎ型層は非晶質シリコンであるためＣ
３ｉ−Ｈの結合は存在せず、Ｓｉ同上の結合（Ｓｉ−３
ｉ）である。この５ｉ−Ｎ結合と、５ｉ−３ｉ結合とを
その結合力について比較した場合、５ｉ−Ｎ結合が勝る
ことが知られている。即ち、従来装置に於ける背面電極
（４）の構成元素の拡散は、上記３１−３１結合の結合
力が弱いため４：発生し、その結果光電変換効率の低下
を招いていたのに対し５本発明装置Ｃ：於ける５ｉ−Ｈ
の結合力は強く拡散が阻止される結果、光電変換効率の
熱劣化が殆ど発生しなかったものと考えられる。By the way, the n-type layer (in) of the device of the present invention is made of amorphous silicon nitride as described above, and there is a bond (Si-N) between silicon (Sl) and nitrogen (Nl) in the film.
- 10,000, since the n-type layer of the conventional device is amorphous silicon, C
There is no 3i-H bond, and the Si ditto bond (Si-3
i). It is known that when this 5i-N bond and 5i-3i bond are compared in terms of bonding strength, the 5i-N bond is superior. That is, in the conventional device, diffusion of the constituent elements of the back electrode (4) occurred due to the weak bonding force of the 31-31 bond, resulting in a decrease in photoelectric conversion efficiency, whereas 5. Inventive device C: 5i-H in
It is thought that the bonding force was strong and diffusion was inhibited, so that almost no thermal deterioration of photoelectric conversion efficiency occurred.
この様にｎ型層（５ｎ）ｌ二窒素を含有せしめることに
より背面電極（４）の構成元素の高温状態に於ける拡散
を阻止し、光電変換効率の熱劣化に対して有効的である
ことが判明した。然し、斯るｎ型層（５ｎ）への窒素含
有は熱劣化に対して有効的である反面、多量に含有せし
めると、直列抵抗成分の増大や、ノンドープ層（５１）
との界面特性の低下をもたらすためｔ二初期の光電変換
効率の低下を招く。即ち、熱劣化を防止するため（：多
量の窒素を含有せしめても、光電変換効率の初期値が低
ければ仕方がない。第５図は斯る窒素含有量と１５０℃
１０時間経過後の光１！変換効率との関係Ｃ二ついて調
べたものである。窒素含有１ＬＯａｔ−チは従来装置の
光電変換効率である。即ち、窒素含有毎が少ないときは
熱劣化率が大きく、窒素含有毎が多くなると熱劣化率は
殆んどゼロに近づくものの初期値が低いためＣ：、窒素
含有量（二して２０ａｔ、％を越えると従来装置の光１
！変換効率を下回った。従って、熱劣化後の光電変換効
率（＝於いて従来装置を上回ったのは窒素含有量がｉａ
ｔ・９６〜２Ｑａｔ、％の範囲であった。By containing dinitrogen in the n-type layer (5n) in this way, diffusion of constituent elements of the back electrode (4) at high temperatures is prevented, and it is effective against thermal deterioration of photoelectric conversion efficiency. There was found. However, while nitrogen inclusion in the n-type layer (5n) is effective against thermal deterioration, if it is included in a large amount, the series resistance component increases and the non-doped layer (51)
This results in a decrease in the photoelectric conversion efficiency at the initial stage of t2. In other words, in order to prevent thermal deterioration (: Even if a large amount of nitrogen is contained, it cannot be helped if the initial value of the photoelectric conversion efficiency is low. Figure 5 shows the relationship between nitrogen content and 150℃
Light 1 after 10 hours! The relationship with conversion efficiency was investigated using two methods. Nitrogen-containing 1LOat-chi is the photoelectric conversion efficiency of the conventional device. That is, when the nitrogen content is small, the thermal deterioration rate is large, and when the nitrogen content is large, the thermal deterioration rate approaches zero, but the initial value is low. When the light exceeds 1, the light of the conventional device
! The conversion efficiency was below. Therefore, the reason why the photoelectric conversion efficiency after thermal deterioration (=) exceeded that of the conventional device was because the nitrogen content was ia
It was in the range of t·96 to 2Qat,%.
第４図Ｔａ１−４４図［（１）はｎ型層（３Ｋｌ）内Ｃ
二於ける窒素の分布を示したものである。即ち１本発明
装置に於ける窒素の分布はｎ型層（３ｎ）の厚み全体に
亘って均一である必要はなく、第４図（ａｌのようにノ
ンドープＭ（３１）との界面をＢ ｉ ／ ｎとしたと
き、該Ｂ ｉ ／ ｎがゼロで背面電極（４） Ｃ向っ
て漸次高く背面電極（４）との界面Ｅ ｎ ／ ｍで最
高となっても良いし、また第４図（ｔｒｉのように膜の
途中まで窒素を含まず背面電極（４）側にのみ窒素を含
んでも艮い。更Ｃ二、第４図［Ｑｌ及び第４図（（１）
の如く。Figure 4 Ta1-44 [(1) is C in the n-type layer (3Kl)
This figure shows the distribution of nitrogen in two locations. That is, the nitrogen distribution in the device of the present invention does not need to be uniform over the entire thickness of the n-type layer (3n), and the interface with the non-doped M (31) as shown in FIG. /n, the B i /n may be zero and gradually increase toward the back electrode (4) C, reaching the maximum at the interface E n /m with the back electrode (4), or as shown in FIG. It is acceptable even if the film does not contain nitrogen halfway through the film and contains nitrogen only on the back electrode (4) side like tri.
Like.
膜中心が高濃度となるべく、ガウス分布したり。It has a Gaussian distribution so that the concentration is high in the center of the membrane.
矩形分布したりしても良い。ただ、何れの窒素分布であ
っても、ｎ型層（３ｎ）全体Ｃ二含まれる窒素の含有率
が平均１匹℃、チ〜２Ｑａｔ、％ となるようＣ：設定
されている。It may be distributed in a rectangular manner. However, regardless of the nitrogen distribution, C: is set so that the content of nitrogen contained in the entire n-type layer (3n) is 1° C., 2 Qat, % on average.
以上の説明では、半導体膜（３）は一つの半導体接合を
備えていたが、複数の半導体接合を備えた所謂タンデム
構造（：も本発明は適用できる。その場合、最終段の半
導体接合（＝於ける背面電極と接する側の不純物層とし
て、窒素の平均含有率１ａｔ・チ〜２Ｑａｔ、％のｎ型
非晶質シリコンナイトライドを用いれば良い。In the above explanation, the semiconductor film (3) was equipped with one semiconductor junction, but the present invention can also be applied to a so-called tandem structure (:) equipped with a plurality of semiconductor junctions. In that case, the semiconductor film (3) in the final stage (= As the impurity layer on the side in contact with the back electrode, n-type amorphous silicon nitride with an average nitrogen content of 1 at.chi to 2 Qat.% may be used.
尚、背面電極と接する側の不純物層としてｎ型の非晶質
シリコンナイトクィドを用いる構造自体は特開昭５７−
１３６３７７号公報（：開示されているものの、斯る公
開公報は非晶質シリコンナイトライドがワイドバンドギ
ャップ材料であることに着目して、窓層、即ち受光面電
極と接する（ｊｌＱの不純物層として用いることを目旧
としたちのであり、本発明のように熱劣化（二対する有
効性（二ついては何の記載もなく、また示唆も与え台な
い。更に、背面側不純物層として用いたときの窒素の含
有率については何らぎ及されておらず、従って本発明と
全く別異なものである。The structure itself, which uses n-type amorphous silicon nightquid as the impurity layer on the side in contact with the back electrode, is described in Japanese Patent Application Laid-Open No. 57-1999.
No. 136377 (:Although disclosed, this publication focuses on the fact that amorphous silicon nitride is a wide bandgap material, and uses it as an impurity layer of jlQ in contact with the window layer, that is, the light-receiving surface electrode. However, as in the present invention, there is no mention or suggestion of effectiveness against thermal deterioration (two). There is no mention of the content of , which is therefore completely different from the present invention.
（ト）発明の効果
本発明光起電力装置は以上の説明から明らかな如く、窒
素の平均含有率が１ ａｔ、％〜２Ｑａｔ−チのｎ型層
を背面電極と接する側の不純物層として用いることによ
って、斯るｎ型層は背面電極構成元素の高温状態Ｃ二於
ける拡散を阻止するので、背面電極構成元素の拡散を主
たる要因とする光電変換効率の熱劣化合抑圧することが
できる。(G) Effects of the Invention As is clear from the above description, the photovoltaic device of the present invention uses an n-type layer with an average nitrogen content of 1 at.% to 2 Qat. as an impurity layer on the side in contact with the back electrode. As a result, such an n-type layer prevents diffusion of elements constituting the back electrode in the high-temperature state C2, thereby suppressing thermal deterioration of photoelectric conversion efficiency mainly caused by diffusion of elements constituting the back electrode.
第１因は本発明光起電力装置の一実施例を示す模式的断
面図、！Ｊ２図は本発明装置と従来装置Ｃ：於ける光電
変換効率の熱劣化５二よる経時変化を示す曲線図、第６
図は熱劣化後の光電変換効率と窒素含有率との関係を示
す曲線図、第４１Ｎ［ａｌ乃至第４図（ａｌは各々ｎ型
層中に於ける窒素濃度分布図。
である。
（２）・・・受光面電極、（３）・・・半導体膜、（５
ｎ）・・・ｎ型層、（４）・・・背面電極。The first reason is a schematic sectional view showing an embodiment of the photovoltaic device of the present invention! Figure J2 is a curve diagram showing the temporal change in photoelectric conversion efficiency due to thermal deterioration 52 in the device of the present invention and the conventional device C:
The figures are curve diagrams showing the relationship between photoelectric conversion efficiency and nitrogen content after thermal deterioration, and Figures 41N[al to 4 (al is each nitrogen concentration distribution diagram in the n-type layer. (2) )... Light-receiving surface electrode, (3)... Semiconductor film, (5
n)...n-type layer, (4)...back electrode.
Claims (2)
、該半導体膜の光入射側に設けられた受光面電極と、上
記半導体膜の背面側に設けられた背面電極と、からなる
光起電力装置であつて、上記半導体膜は非晶質シリコン
を主体とすると共に、上記背面電極と接する側の不純物
層はその不純物層内に平均含有率１ａｔ．％〜２０ａｔ
．％の窒素を含むｎ型層であることを特徴とした光起電
力装置。(1) A photovoltaic device comprising a semiconductor film having at least one semiconductor junction, a light-receiving surface electrode provided on the light incident side of the semiconductor film, and a back electrode provided on the back side of the semiconductor film. The semiconductor film is mainly made of amorphous silicon, and the impurity layer on the side in contact with the back electrode has an average content of 1 at. %～20at
．． A photovoltaic device characterized in that it is an n-type layer containing % of nitrogen.
を特徴とする特許請求の範囲第１項記載の光起電力装置
。(2) The photovoltaic device according to claim 1, wherein the nitrogen content of the n-type layer is higher on the back electrode side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61228797A JPH07105513B2 (en) | 1986-09-26 | 1986-09-26 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61228797A JPH07105513B2 (en) | 1986-09-26 | 1986-09-26 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6384074A true JPS6384074A (en) | 1988-04-14 |
| JPH07105513B2 JPH07105513B2 (en) | 1995-11-13 |
Family
ID=16882004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61228797A Expired - Lifetime JPH07105513B2 (en) | 1986-09-26 | 1986-09-26 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105513B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017724A (en) * | 2001-06-29 | 2003-01-17 | Canon Inc | Photovoltaic element |
| JP2009065217A (en) * | 2008-12-22 | 2009-03-26 | Sharp Corp | Photoelectric conversion device and manufacturing method thereof |
| JP2009076939A (en) * | 2008-12-22 | 2009-04-09 | Sharp Corp | Photoelectric conversion device and its manufacturing method |
| WO2009081713A1 (en) * | 2007-12-26 | 2009-07-02 | Mitsubishi Heavy Industries, Ltd. | Photoelectric converting device and process for producing the photoelectric converting device |
| WO2010067704A1 (en) * | 2008-12-09 | 2010-06-17 | 三洋電機株式会社 | Photovoltaic device and method for manufacturing same |
| JP2010225735A (en) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | Photosensor and method of manufacturing the same |
| US7915520B2 (en) | 2004-03-24 | 2011-03-29 | Sharp Kabushiki Kaisha | Photoelectric conversion device and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
-
1986
- 1986-09-26 JP JP61228797A patent/JPH07105513B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57136377A (en) * | 1981-02-17 | 1982-08-23 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017724A (en) * | 2001-06-29 | 2003-01-17 | Canon Inc | Photovoltaic element |
| JP4560245B2 (en) * | 2001-06-29 | 2010-10-13 | キヤノン株式会社 | Photovoltaic element |
| US7915520B2 (en) | 2004-03-24 | 2011-03-29 | Sharp Kabushiki Kaisha | Photoelectric conversion device and manufacturing method thereof |
| WO2009081713A1 (en) * | 2007-12-26 | 2009-07-02 | Mitsubishi Heavy Industries, Ltd. | Photoelectric converting device and process for producing the photoelectric converting device |
| JP2009158667A (en) * | 2007-12-26 | 2009-07-16 | Mitsubishi Heavy Ind Ltd | Photoelectric converter and method of producing the same |
| WO2010067704A1 (en) * | 2008-12-09 | 2010-06-17 | 三洋電機株式会社 | Photovoltaic device and method for manufacturing same |
| JP2010140935A (en) * | 2008-12-09 | 2010-06-24 | Sanyo Electric Co Ltd | Photoelectromotive force device, and method of manufacturing the same |
| JP2009065217A (en) * | 2008-12-22 | 2009-03-26 | Sharp Corp | Photoelectric conversion device and manufacturing method thereof |
| JP2009076939A (en) * | 2008-12-22 | 2009-04-09 | Sharp Corp | Photoelectric conversion device and its manufacturing method |
| JP2010225735A (en) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | Photosensor and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07105513B2 (en) | 1995-11-13 |
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