JPS5764968A - Image sensor - Google Patents

Image sensor

Info

Publication number
JPS5764968A
JPS5764968A JP55140585A JP14058580A JPS5764968A JP S5764968 A JPS5764968 A JP S5764968A JP 55140585 A JP55140585 A JP 55140585A JP 14058580 A JP14058580 A JP 14058580A JP S5764968 A JPS5764968 A JP S5764968A
Authority
JP
Japan
Prior art keywords
capacitance
diode
dielectric
photo
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55140585A
Other languages
Japanese (ja)
Inventor
Hideo Segawa
Masakuni Itagaki
Tatsumi Ishiwatari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP55140585A priority Critical patent/JPS5764968A/en
Publication of JPS5764968A publication Critical patent/JPS5764968A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To increase the equivalent capacitance, to obtain high photo output power and to lessen the signal mixing from other bits for the subject image sensor by a method wherein a thin-film capacitance, having a dielectric of high dielectric constant, is connected in parallel with a thin film photo diode. CONSTITUTION:A metal electrode 2, an In2O3 3, a CdS 4, a CdTe 5 and a Te 6 are formed as prescribed on a glass plate 1 and a photo diode 8 and a Cds-Te blocking diode 9 are connected in series in reversed polarity. The capacitance 12 having a dielectric 13 is formed on the diode 8 in parallel. A TiO2 and the like are used on the dielectric 13. Accordingly, the capacitance 12 is added to the junction capacitance CP of the diode 8 and makes CP>>CB for the capacitance CB of the diode 9. With this constitution, high photo output power can be obtained and, at the same time, the signal mixing from other bits can be reduced.
JP55140585A 1980-10-09 1980-10-09 Image sensor Pending JPS5764968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55140585A JPS5764968A (en) 1980-10-09 1980-10-09 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55140585A JPS5764968A (en) 1980-10-09 1980-10-09 Image sensor

Publications (1)

Publication Number Publication Date
JPS5764968A true JPS5764968A (en) 1982-04-20

Family

ID=15272106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55140585A Pending JPS5764968A (en) 1980-10-09 1980-10-09 Image sensor

Country Status (1)

Country Link
JP (1) JPS5764968A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229858A (en) * 1990-01-11 1993-07-20 Fuji Xerox Co., Ltd. Noise free, line form image sensor
EP0662269A1 (en) * 1993-06-08 1995-07-12 Ramot University Authority For Applied Research & Industrial Development Ltd. Controlled semiconductor capacitors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50154086A (en) * 1974-05-31 1975-12-11
JPS5123093A (en) * 1974-08-20 1976-02-24 Matsushita Electronics Corp Hotodaioodo oyobisono seizohoho
JPS51100630A (en) * 1975-03-03 1976-09-06 Sanju Gijutsu Kenkyusho Kk

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50154086A (en) * 1974-05-31 1975-12-11
JPS5123093A (en) * 1974-08-20 1976-02-24 Matsushita Electronics Corp Hotodaioodo oyobisono seizohoho
JPS51100630A (en) * 1975-03-03 1976-09-06 Sanju Gijutsu Kenkyusho Kk

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229858A (en) * 1990-01-11 1993-07-20 Fuji Xerox Co., Ltd. Noise free, line form image sensor
EP0662269A1 (en) * 1993-06-08 1995-07-12 Ramot University Authority For Applied Research & Industrial Development Ltd. Controlled semiconductor capacitors
EP0662269A4 (en) * 1993-06-08 1997-11-26 Univ Ramot Controlled semiconductor capacitors.

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