JPS5687381A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS5687381A JPS5687381A JP16516279A JP16516279A JPS5687381A JP S5687381 A JPS5687381 A JP S5687381A JP 16516279 A JP16516279 A JP 16516279A JP 16516279 A JP16516279 A JP 16516279A JP S5687381 A JPS5687381 A JP S5687381A
- Authority
- JP
- Japan
- Prior art keywords
- film
- group
- band gap
- compound
- paired electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910017000 As2Se3 Inorganic materials 0.000 abstract 1
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To obtain a photoelectric conversion element having a small dark current by providing a compound film of II-IV group having a relatively wide band gap, a compound film of II-IV group having a narrower band gap than the above film and a paired electrode on a clear conductive film. CONSTITUTION:A clear conductive film 2 such as SnO2 or In2O3 or the like is formed on a substrate 1 made of photopermeability substance and compound film 3 or II-IV group having a relatively wide band gap (for example, a CdS film, a ZnS film, a ZnSe film) is stacked on the film 2. Next, a compound film 4 of II-IV group having a relatively narrow band gap (for example, a CdTe film, a CdSe film) is stacked on the film 3. Furthermore, a paired electrode 6 made of gold or the like is formed on the film 4. Then, the paired electrode 6 may be provided by stacking an amorphous chalcogenite film 5 (for example, an As2Se3 film) on the film 4. In this way, a small dark current, a quick photoresponse speed and long sized product will be obtd. under a reverse-bias condition.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16516279A JPS5687381A (en) | 1979-12-19 | 1979-12-19 | Photoelectric conversion element |
| US06/209,138 US4375644A (en) | 1979-11-30 | 1980-11-21 | Photoelectric element, picture-reading device including the same, and process for production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16516279A JPS5687381A (en) | 1979-12-19 | 1979-12-19 | Photoelectric conversion element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5687381A true JPS5687381A (en) | 1981-07-15 |
Family
ID=15807039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16516279A Pending JPS5687381A (en) | 1979-11-30 | 1979-12-19 | Photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5687381A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117770A (en) * | 1983-11-30 | 1985-06-25 | Matsushita Electric Ind Co Ltd | One-dimensional thin film sensor |
| US20110146788A1 (en) * | 2009-12-23 | 2011-06-23 | General Electric Company | Photovoltaic cell |
-
1979
- 1979-12-19 JP JP16516279A patent/JPS5687381A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117770A (en) * | 1983-11-30 | 1985-06-25 | Matsushita Electric Ind Co Ltd | One-dimensional thin film sensor |
| JPH0464185B2 (en) * | 1983-11-30 | 1992-10-14 | Matsushita Electric Ind Co Ltd | |
| US20110146788A1 (en) * | 2009-12-23 | 2011-06-23 | General Electric Company | Photovoltaic cell |
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