JPS5678178A - Photoelectric transducer - Google Patents

Photoelectric transducer

Info

Publication number
JPS5678178A
JPS5678178A JP15526779A JP15526779A JPS5678178A JP S5678178 A JPS5678178 A JP S5678178A JP 15526779 A JP15526779 A JP 15526779A JP 15526779 A JP15526779 A JP 15526779A JP S5678178 A JPS5678178 A JP S5678178A
Authority
JP
Japan
Prior art keywords
film
as2se3
piled
cdte
turns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15526779A
Other languages
Japanese (ja)
Inventor
Koji Mori
Hideo Segawa
Koichi Sakurai
Masakuni Itagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP15526779A priority Critical patent/JPS5678178A/en
Priority to US06/209,138 priority patent/US4375644A/en
Publication of JPS5678178A publication Critical patent/JPS5678178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a good spectral characteristic by a method wherein a Cds film, CdTe with a prescribed thickness of film and As2Se3 film are by turns piled in layer on a transparent conductive membrane formed on a light transmitting substance, and further, an opposed electrode is formed on the As2Se3 film and a dark current at the reverse bias is reduced. CONSTITUTION:On the transparent conductive membrane formed on the light transmitting substance 1, the Cds film 3, The CdTe film 4 and the As2Se3 film 5 of 0.2-5mun thick are by turns piled in layer, and in addition, the opposed electrode 6 made of gold or the like is formed on the film 5. As shown by an I-V curve A, the dark current at the reverse bias is reduced, a photocurrent at the irradiation of light is increased enough as is shown by a curve B, a photoresponsibility is made favorable, and a good spectral characteristic is adapted to be used for reading images of fascimile and digital copier and the like.
JP15526779A 1979-11-30 1979-11-30 Photoelectric transducer Pending JPS5678178A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15526779A JPS5678178A (en) 1979-11-30 1979-11-30 Photoelectric transducer
US06/209,138 US4375644A (en) 1979-11-30 1980-11-21 Photoelectric element, picture-reading device including the same, and process for production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15526779A JPS5678178A (en) 1979-11-30 1979-11-30 Photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5678178A true JPS5678178A (en) 1981-06-26

Family

ID=15602167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15526779A Pending JPS5678178A (en) 1979-11-30 1979-11-30 Photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5678178A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005122734A (en) * 2003-10-10 2005-05-12 Rosemount Inc Compact process transmitter with improved lead wire connection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005122734A (en) * 2003-10-10 2005-05-12 Rosemount Inc Compact process transmitter with improved lead wire connection

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