JPH0464185B2 - - Google Patents
Info
- Publication number
- JPH0464185B2 JPH0464185B2 JP58225904A JP22590483A JPH0464185B2 JP H0464185 B2 JPH0464185 B2 JP H0464185B2 JP 58225904 A JP58225904 A JP 58225904A JP 22590483 A JP22590483 A JP 22590483A JP H0464185 B2 JPH0464185 B2 JP H0464185B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- amorphous silicon
- film
- thin film
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 40
- 239000010409 thin film Substances 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 claims 1
- 229910017817 a-Ge Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000005476 soldering Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- AZXGXVQWEUFULR-UHFFFAOYSA-N 2',4',5',7'-tetrabromofluorescein Chemical compound OC(=O)C1=CC=CC=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C(O)=C(Br)C=C21 AZXGXVQWEUFULR-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、水素化された非晶質シリコン（以下
ａ−Si：Ｈ）を用いた長尺一次元センサーすなわ
ち、多数の絵素をある一方向のみに配列させ、そ
の方向における光の強度を検知する素子に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to a long one-dimensional sensor using hydrogenated amorphous silicon (hereinafter referred to as a-Si:H), that is, a long one-dimensional sensor using hydrogenated amorphous silicon (hereinafter referred to as a-Si:H). This relates to an element that is arranged in only one direction and detects the intensity of light in that direction.
従来例の構成とその問題点
従来、長尺一次元センサーの基本的な構成は第
１図に示すようにセンサー部に対してその信号処
理に必要な配線部が占めるような構成になつてい
た。第１図はその平面図であり、１はガラス基
板、２は透明導電膜よりなる第１電極、３は光起
電力を発生させる材料、４は各絵素に分離された
第２電極である。このように光に感じて信号を発
生する部分は、第１電極２と第２電極４との重な
つた部分だけであり、他の部分のほとんどは、配
線のために必要なものであつた。実際のセンサー
は、絵素の数が第１図より多くなつている。そし
て第１図に示した構成を横方向にくり返した構成
となつており、第２電極４の幅が広くなつた部分
に各々ハンダ付けしてリード線をとり出してい
る。すなわち絵素の数だけ不良率の高いハンダ付
けをしなければならなかつた。Conventional structure and its problems Conventionally, the basic structure of a long one-dimensional sensor was such that the sensor section was occupied by the wiring section necessary for signal processing, as shown in Figure 1. . FIG. 1 is a plan view of the same, in which 1 is a glass substrate, 2 is a first electrode made of a transparent conductive film, 3 is a material that generates photovoltaic force, and 4 is a second electrode separated into each picture element. . The only part that senses light and generates a signal is the overlapping part of the first electrode 2 and second electrode 4, and most of the other parts are necessary for wiring. . The actual sensor has more picture elements than in Figure 1. The configuration shown in FIG. 1 is repeated in the horizontal direction, and lead wires are taken out by soldering to the widened portions of the second electrode 4. In other words, it was necessary to perform soldering with a high failure rate for the number of picture elements.
発明の目的
本発明は、上述した２点の問題点を軽減し、コ
ンパクトで信頼性が高く、高速動作可能な長尺一
次元センサーを提供するものである。OBJECTS OF THE INVENTION The present invention alleviates the above two problems and provides a long one-dimensional sensor that is compact, highly reliable, and capable of high-speed operation.
発明の構成
本発明は透光性絶縁基板上に透明導電膜よりな
る第１電極および分離されてなる配線電極、水素
化された非晶質シリコン（ａ−Si：Ｈ）ｐ型、ｉ
型、ｎ型の各半導体膜、上記ａ−Si：Ｈよりも光
学的禁止帯幅が小さな薄膜、各絵素に対応し上記
第１電極に対応する分離された第２電極を順次配
するものであり、上記配線電極と上記第２電極と
を上記ａ−Si：Ｈ半導体膜および上記光学的禁止
帯幅Egがａ−Si：Ｈよりも小さな薄膜を貫通さ
せて二次元的に配線することにより小型化し、小
型化することによつて直列抵抗が減少するために
高速動作が可能となり、カラーフイルタの重ね合
わせおよびEgが小さな薄膜によつてａ−Si：Ｈ
による信号と外部から入射する光による雑音との
比を増大させる。Structure of the Invention The present invention includes a first electrode made of a transparent conductive film on a light-transmitting insulating substrate, a wiring electrode separated therefrom, hydrogenated amorphous silicon (a-Si:H) p-type, i
type and n-type semiconductor films, a thin film having an optical bandgap smaller than the above a-Si:H, and a separated second electrode corresponding to each picture element and corresponding to the above first electrode arranged in sequence. and the wiring electrode and the second electrode are two-dimensionally wired by penetrating the a-Si:H semiconductor film and the thin film whose optical bandgap Eg is smaller than a-Si:H. Due to miniaturization, series resistance is reduced and high-speed operation is possible, and a-Si:H
This increases the ratio between the signal caused by the noise caused by the external light and the noise caused by the light incident from the outside.
実施例の説明
以下、本発明の構成およびその製造法について
図に基づいて説明する。第２図は、本発明による
構成を説明する平面図である。第２図のイ−イ′
線での断面図を示したのが第３図である。第２図
のロ−ロ′線での断面図を第４図に示す。透光性
絶縁基板例えばガラス板１１上に透明導電膜１
２，１２′，１２″，１３を選択的に蒸着するか、
ガラス板１１上全面に蒸着し選択的にエツチング
する。この上に、第２図に示した１４の部分に、
Al，Fe，Cu，Zn，Pd，Ag，Cd，In，Sn，Au
等を約5000Å蒸着する。この上にａ−Si：Ｈ膜お
よび、ａ−Si：Ｈ膜より、光学的禁止帯幅の小さ
な膜例えば、ａ−Ge膜１５を堆積する。基板温
度は250℃程度である。SiH4に流量比として
B2H6を0.1％程度混合させたガスを約10mW／cm2
の放電電力密度で分解させｐ型ａ−Si：Ｈ膜を、
SiH4ガスのみを分解させてｉ型ａ−Si：Ｈ膜を、
SiH4にPH3を流量比１％程度混合させてｎ型ａ
−Si：Ｈ膜を順次堆積させａ−Si：Hpinダイオ
ードを作成した後、上記ａ−Si：Ｈ膜より光学的
禁止帯幅Egの小さな膜である光学的遮蔽膜、こ
こではａ−Ge膜を堆積する。ａ−Geはａ−Si：
Ｈ膜と同様な堆積装置、堆積条件で製造できる。
原料ガスとしてGeH4を用いる。本実施例では、
ｐ型、ｉ型、ｎ型のそれぞれａ−Si：Ｈ膜を順に
約100Å、約4000Å、500Å堆積させ、ａ−Ge膜
は約1000Å堆積させる。上記ａ−Si：Ｈ膜より、
Egが小さな薄膜、本実施例ではａ−Ge膜は、受
光部面と反対面の面からの光入射を遮へいするた
めである。ａ−Ge膜はEg＝1.1eVであり、ａ−
Si：Ｈ膜はEg＝1.7eVであるため、遮光は十分行
なわれている。これら薄膜１５を堆積させると、
前述の蒸着金属１４は、第３図に示すように薄膜
１５を貫通し、表面にまで達する。この合金領域
１６に重なるように裏面電極１７（ここではAl
蒸着膜）を形成する。合金領域１６は、薄膜１５
堆積後でもその上に第２図に示した１４の部分
に、Al，Fe，Cu，Zn，Pd，Ag，Cd，In，Sn，
Au等を基板温度を150〜250℃程度上昇させて蒸
着するか、蒸着してから加熱することによつて形
成することができる。裏面電極１７の一部を外部
電極とり出し部１７′とすることにより、ここの
みにハンダ付けをするだけでよく、不良率の高い
ハンダ付箇所が大幅に減少する。これでも配線抵
抗が高くなる場合は、第２図ではセンサーの一端
のみを示してあるが、他端にも１７′と同様な外
部電極とり出し部を設ければ良い。また、ハンダ
付けはこの構成の場合は、必ずしも必要ではな
く、バネで押えたり、ソケツト等にさし込んでも
外部との接続は行える。受光部は第２電極１７″
と、配線電極１３、配線電極１３と裏面配線電極
１７とを合金部分１６で、接続されるようにす
る。DESCRIPTION OF EMBODIMENTS Hereinafter, the structure of the present invention and its manufacturing method will be explained based on the drawings. FIG. 2 is a plan view illustrating the configuration according to the present invention. I' in Figure 2
FIG. 3 shows a cross-sectional view taken along a line. A cross-sectional view taken along the Ro-Ro' line in FIG. 2 is shown in FIG. A transparent conductive film 1 is placed on a transparent insulating substrate, for example, a glass plate 11.
2, 12', 12'', 13 are selectively deposited,
It is deposited on the entire surface of the glass plate 11 and selectively etched. On top of this, in the section 14 shown in Figure 2,
Al, Fe, Cu, Zn, Pd, Ag, Cd, In, Sn, Au
etc. to a thickness of about 5000 Å. On this, an a-Si:H film and a film having a smaller optical band gap than the a-Si:H film, such as the a-Ge film 15, are deposited. The substrate temperature is about 250°C. As the flow rate ratio to SiH 4
Approximately 10 mW/cm 2 of gas containing approximately 0.1% B 2 H 6
The p-type a-Si:H film is decomposed at a discharge power density of
I-type a-Si:H film is made by decomposing only SiH4 gas,
Mix SiH 4 and PH 3 at a flow rate ratio of about 1% to form n-type a.
-Si:H films are sequentially deposited to create an a-Si:Hpin diode, and then an optical shielding film, here an a-Ge film, which is a film with a smaller optical band gap Eg than the above a-Si:H film is formed. Deposit. a-Ge is a-Si:
It can be manufactured using the same deposition equipment and deposition conditions as the H film.
GeH 4 is used as the raw material gas. In this example,
P-type, i-type, and n-type a-Si:H films are sequentially deposited to a thickness of approximately 100 Å, approximately 4000 Å, and 500 Å, respectively, and an a-Ge film is deposited to a thickness of approximately 1000 Å. From the above a-Si:H film,
The purpose of the thin film with a small Eg, the a-Ge film in this example, is to block light from entering from the surface opposite to the light receiving surface. The a-Ge film has Eg=1.1eV, and a-
Since the Si:H film has an Eg of 1.7 eV, light shielding is sufficient. When these thin films 15 are deposited,
The above-described vapor-deposited metal 14 penetrates through the thin film 15 and reaches the surface, as shown in FIG. The back electrode 17 (here Al
evaporated film). The alloy region 16 is the thin film 15
Even after deposition, Al, Fe, Cu, Zn, Pd, Ag, Cd, In, Sn,
It can be formed by evaporating Au or the like by increasing the substrate temperature by about 150 to 250°C, or by evaporating and then heating. By making a part of the back electrode 17 the external electrode extraction part 17', it is only necessary to solder this part, and the number of soldered parts with a high defect rate can be greatly reduced. If this still results in high wiring resistance, although only one end of the sensor is shown in FIG. 2, an external electrode extraction portion similar to 17' may be provided at the other end. Further, soldering is not necessarily necessary in this configuration, and connection to the outside can be made by pressing with a spring or inserting into a socket or the like. The light receiving part is the second electrode 17″
Then, the wiring electrode 13 and the wiring electrode 13 and the back wiring electrode 17 are connected by the alloy portion 16.
なお本実施例では、基板１１にガラス板を用い
ているが、例えばポリエステルフイルム等を用い
れば、自由に曲げることができるため、被写体に
完全密着することができ、装置も小型化すること
が可能となる。 In this embodiment, a glass plate is used for the substrate 11, but if a polyester film or the like is used, for example, it can be bent freely, so it can be in complete contact with the subject, and the device can also be made smaller. becomes.
本実施例のような構造では、受光部以外の配線
部でも、光を感じるため、薄膜１５の裏面電極１
７側にａ−Ge堆積させ遮光させたのと同様、遮
光材料が必要である。またセンサーのカラー化も
素子高級化には必要である。本発明では、上記２
点を兼ねて、基板の光入射側の面全体にフイルタ
を形成し、受光部のみにカラー化に必要なフイル
タ構成をする。すなわち、例えば赤２１、緑２
２、青２３のフイルタ３枚を重ねれば（第３図、
第４図）、光すべて吸収され遮光の働きをし、受
光部のみにフイルタ１枚のみを残せば３原色の１
色を検知するセンサーとなる。薄膜１５の３原色
の感度の低いものがあれば、センサーの数を増加
させると回路側での色補正が簡単になる。また第
４図の３１の部分には、フイルタを蒸着していな
い。これは、明るさのセンサーとしても使え、ま
た原稿の位置センサ、原稿の枚数検知、移動速度
検知等の役割を持たせることができる。 In the structure of this embodiment, since light is sensed even in wiring parts other than the light receiving part, the back electrode 1 of the thin film 15
Similar to the case where a-Ge was deposited on the 7 side to block light, a light blocking material is required. Furthermore, colorization of sensors is also necessary for the upgrading of devices. In the present invention, the above 2
Also, a filter is formed on the entire surface of the substrate on the light incident side, and only the light receiving section is provided with the filter configuration necessary for colorization. That is, for example, red 21, green 2
2. If you stack three pieces of blue 23 filters (Fig. 3,
(Fig. 4), all of the light is absorbed and acts as a light shield, and if only one filter is left only in the light receiving area, one of the three primary colors can be used.
It becomes a sensor that detects color. If the sensitivity of the three primary colors of the thin film 15 is low, increasing the number of sensors will simplify color correction on the circuit side. Further, no filter is deposited on the portion 31 in FIG. 4. This can be used as a brightness sensor, and can also serve as a document position sensor, document number detection, movement speed detection, etc.
なお、本実施例では、透明導電膜付きガラス板
上にａ−Si：Ｈ膜によるセンサーを構成したが、
全く逆の構成すなわち、ガラス板上に、第２電極
配線電極を配しａ−Si：Ｈ膜センサーを配し金属
によつて貫通、短絡させた後、透明導電膜、カラ
ーフイルタを順に配しても本発明は実施される。 In this example, a sensor was constructed using an a-Si:H film on a glass plate with a transparent conductive film.
In a completely opposite configuration, a second electrode wiring electrode is arranged on a glass plate, an a-Si:H film sensor is arranged, the metal is used to penetrate and short-circuit, and then a transparent conductive film and a color filter are arranged in this order. However, the present invention can be practiced.
第２図に基づいて本発明による長尺一次元セン
サーの動作について説明する。まず動作初期に
は、第１電極１２，１２′，１２″および第２電極
１７″は開放の状態にする。次に第１電極１２′を
接地し、第２電極１７″を順次端から、または乱
数を発生させその乱数に従つて接地状態にさせる
ことにより光が照射されている個別の受光素子か
ら、薄膜１５中に構成されているａ−Si：Hpin
ダイオードより発生する光電流をとり出す。次に
第１電極１２″を接地し、上述したように第２電
極１７″を次々と接地し光電流をとり出す。この
ようにして第１電極を１通り接地して光電流を取
り出し終わつた後、再び初めの状態にもどつて上
述した動作をくり返す。この間に原稿等の移動に
よつて変化した様子を光電流で検出することがで
きる。 The operation of the long one-dimensional sensor according to the present invention will be explained based on FIG. First, in the initial stage of operation, the first electrodes 12, 12', 12'' and the second electrode 17'' are in an open state. Next, the first electrode 12' is grounded, and the second electrode 17'' is sequentially connected to the thin film from the end or from the individual light-receiving elements irradiated with light by generating random numbers and grounding them according to the random numbers. a-Si composed in 15: Hpin
Extract the photocurrent generated by the diode. Next, the first electrode 12'' is grounded, and as described above, the second electrodes 17'' are grounded one after another to extract the photocurrent. After the first electrode is grounded once and the photocurrent is extracted in this manner, the first electrode is returned to the initial state and the above-described operation is repeated. During this time, changes due to the movement of the document or the like can be detected using photocurrent.
以上述べた動作は光起電力効果の光電流検出に
よるものであるが、短絡状態を開放状態とすべて
置き換えることにより光起電力効果の光電圧検出
による動作もできる。また、透明導電膜よりなる
第１電極１２，１２′，１２″とｉ型ａ−Si：Ｈと
のヘテロ接合によつてもこの動作は同様に行なう
ことができる。この場合、センサーは上述のpin
構造からｐ型をとり除けば良い。 The operation described above is based on photocurrent detection of the photovoltaic effect, but by replacing all short-circuit states with open states, the operation can also be performed using photovoltage detection of the photovoltaic effect. Further, this operation can be similarly performed by using a heterojunction between the first electrodes 12, 12', 12'' made of a transparent conductive film and i-type a-Si:H. In this case, the sensor is pin
All you have to do is remove the p-type from the structure.
上記動作説明は光起電力効果を利用したもので
あるが、光導電効果を利用してもセンサーは動作
可能である。この場合、薄膜１５の構成は実施例
で説明したものでも良く、また、ａ−Si：Ｈ膜は
ｉ型層のみでも、pip型、nin型、Pi型、ni型等、
ｉ型層でキヤリアの光励起が起こりｉ型層の抵抗
が下がるような構造であればいずれの構造であつ
ても良い。また、この場合、ｉ型層の抵抗が光照
射により下がることを検知できるように電界をか
けておけば良い。実施例で説明した構成で光導電
効果を利用する動作にするためには、ダイオード
を逆バイアスさせれば良い。 Although the above explanation of the operation uses the photovoltaic effect, the sensor can also operate using the photoconductive effect. In this case, the structure of the thin film 15 may be the one explained in the embodiment, and the a-Si:H film may have only an i-type layer, a pip-type, nin-type, Pi-type, ni-type, etc.
Any structure may be used as long as the carrier is optically excited in the i-type layer and the resistance of the i-type layer is reduced. Further, in this case, an electric field may be applied so that it can be detected that the resistance of the i-type layer decreases due to light irradiation. In order to operate the structure described in the embodiment using the photoconductive effect, it is sufficient to reverse bias the diode.
発明の効果
本発明によれば、前述のように立体配線を簡単
に行なうことができるため、素子をコンパクトに
形成でき生産性が向上できる。また、受光部以外
の遮光にカラーフイルタを用いれば、素子のカラ
ー化と同時にＳ／Ｎ比を向上させることができ
る。さらに、外部端子の接続に必要ないハンダ付
けの箇所を減らすことができ、全くハンダ工程を
通さずに素子を作成することもできるため、歩留
の高い作成工程にすることや素子故障時にとり換
え簡単な素子を作ることができる。Effects of the Invention According to the present invention, three-dimensional wiring can be easily performed as described above, so that elements can be formed compactly and productivity can be improved. Furthermore, if a color filter is used to block light from areas other than the light receiving section, the S/N ratio can be improved at the same time as the element is colored. Furthermore, it is possible to reduce the number of soldering points that are not necessary for connecting external terminals, and it is also possible to create devices without going through the soldering process at all, allowing for high-yield manufacturing processes and replacement in the event of device failure. You can make simple elements.
第１図は従来例の構成を示す平面図、第２図は
本発明の一実施例を示す平面図、第３図は第２図
イ−イ′線における断面図、第４図は第２図ロ−
ロ′線における断面図である。
１，１１……透光性絶縁基板、２，１２，１
２′，１２″……透明導電性第１電極、４，１７″
……第２電極、３……光起電力を発生させる材
料、１３……配線電極、１４……Al，Fe，Cu，
Zn，Pd，Ag，Cd，In，Sn，Au等金属を蒸着さ
せる部分、１５……ａ−Si：Ｈ膜およびａ−Si：
Ｈ膜より光学的禁止帯幅の小さな薄膜、１６……
Al，Fe，Cu，Zn，Pd，Ag，Cd，In，Sn，Au
等金属とａ−Si：Ｈ膜等薄膜との合金部分、１７
……裏面配線電極、１７′……外部電極とり出し
部。
FIG. 1 is a plan view showing the configuration of a conventional example, FIG. 2 is a plan view showing an embodiment of the present invention, FIG. 3 is a sectional view taken along the line A--I' in FIG. Figure low
FIG. 1, 11...transparent insulating substrate, 2, 12, 1
2', 12''...transparent conductive first electrode, 4,17''
... Second electrode, 3 ... Material that generates photovoltaic force, 13 ... Wiring electrode, 14 ... Al, Fe, Cu,
Part where metals such as Zn, Pd, Ag, Cd, In, Sn, and Au are deposited, 15...a-Si:H film and a-Si:
Thin film with smaller optical band gap than H film, 16...
Al, Fe, Cu, Zn, Pd, Ag, Cd, In, Sn, Au
Alloy part of metal and thin film such as a-Si:H film, 17
... Back side wiring electrode, 17' ... External electrode extraction part.
Claims (1)
１電極および分離されて第１の方向に延びる複数
の配線電極、水素化された非晶質シリコン半導体
膜、前記非晶質シリコンよりも光学的禁止帯幅が
小さく受光部面と反対側の面から光入射を遮蔽す
る薄膜、各絵素に対応するとともに前記第１電極
に複数本宛対向する第２電極および分離されて第
１の方向と垂直な方向に延びる複数の裏面配線電
極を順次配し、前記配線電極と前記第２電極間お
よび前記配線電極と前記裏面配線電極間を、前記
非晶質シリコン半導体膜および前記光学的禁止帯
幅が非晶質シリコンよりも小さな薄膜に金属を選
択的に拡散させてなる合金領域で接続したことを
特徴とする一次元薄膜センサー。 ２ 非晶質ゲルマニウム、非晶質シリコンゲルマ
ニウム、非晶質シリコンスズまたは水素含有量が
５％未満の非晶質シリコンを、水素化された非晶
質シリコンより光学的禁止帯幅が小さな薄膜とし
て使用することを特徴とする特許請求の範囲第１
項記載の一次元薄膜センサー。 ３ 透光性絶縁基板の一面に、透明導電膜よりな
る第１電極および分離されて第１の方向に延びる
複数の配線電極、水素化された非晶質シリコン半
導体膜、前記非晶質シリコンよりも光学的禁止帯
幅が小さく受光部面と反対側の面から光入射を遮
蔽する薄膜、各絵素に対応するとともに前記第１
電極に複数本宛対向する第２電極および分離され
て第１の方向と垂直な方向に延びる複数の裏面配
線電極を順次配し、前記配線電極と前記第２電極
間および前記配線電極と前記裏面配線電極間を、
前記非晶質シリコン半導体膜および前記光学的禁
止帯幅が非晶質シリコンよりも小さな薄膜に金属
を選択的に拡散させてなる合金領域で接続し、前
記透光性絶縁基板の他面に前記第２電極と対向す
る位置に、赤、緑、青の三原色に対応する個別の
カラーフイルタを配し、その他の部分に前記三原
色に対応するカラーフイルタを重ね合わせて配し
たことを特徴とする一次元薄膜センサー。[Scope of Claims] 1. A first electrode made of a transparent conductive film, a plurality of separated wiring electrodes extending in a first direction, a hydrogenated amorphous silicon semiconductor film, and a hydrogenated amorphous silicon semiconductor film; a thin film that has an optical bandgap smaller than that of amorphous silicon and blocks light from entering from a surface opposite to the light-receiving surface; a second electrode that corresponds to each picture element and faces the first electrode; A plurality of back wiring electrodes separated and extending in a direction perpendicular to the first direction are sequentially arranged, and the amorphous silicon semiconductor is connected between the wiring electrode and the second electrode and between the wiring electrode and the back wiring electrode. A one-dimensional thin film sensor, characterized in that the film is connected to the film by an alloy region formed by selectively diffusing metal into the thin film having an optical band gap smaller than that of amorphous silicon. 2. Amorphous germanium, amorphous silicon germanium, amorphous silicon tin, or amorphous silicon with a hydrogen content of less than 5% as a thin film with an optical bandgap smaller than that of hydrogenated amorphous silicon. Claim 1 characterized in that the use of
The one-dimensional thin film sensor described in Section 1. 3. A first electrode made of a transparent conductive film, a plurality of separated wiring electrodes extending in a first direction, a hydrogenated amorphous silicon semiconductor film, and a layer formed from the amorphous silicon on one surface of a light-transmitting insulating substrate. A thin film having a small optical forbidden band width and shielding light from entering from the surface opposite to the light-receiving section surface corresponds to each picture element and the first
A plurality of second electrodes facing the electrodes and a plurality of separated back surface wiring electrodes extending in a direction perpendicular to the first direction are sequentially arranged, and between the wiring electrode and the second electrode and between the wiring electrode and the back surface. between the wiring electrodes,
The amorphous silicon semiconductor film and the thin film having an optical bandgap smaller than that of the amorphous silicon are connected to each other by an alloy region formed by selectively diffusing metal, and the other surface of the transparent insulating substrate is A primary device characterized in that individual color filters corresponding to the three primary colors of red, green, and blue are arranged at a position facing the second electrode, and color filters corresponding to the three primary colors are arranged in an overlapping manner in other parts. Original thin film sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58225904A JPS60117770A (en) | 1983-11-30 | 1983-11-30 | One-dimensional thin film sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58225904A JPS60117770A (en) | 1983-11-30 | 1983-11-30 | One-dimensional thin film sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60117770A JPS60117770A (en) | 1985-06-25 |
| JPH0464185B2 true JPH0464185B2 (en) | 1992-10-14 |
Family
ID=16836706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58225904A Granted JPS60117770A (en) | 1983-11-30 | 1983-11-30 | One-dimensional thin film sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60117770A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687381A (en) * | 1979-12-19 | 1981-07-15 | Ricoh Co Ltd | Photoelectric conversion element |
| JPS5853870A (en) * | 1981-09-26 | 1983-03-30 | Matsushita Electric Ind Co Ltd | Thin film solar battery |
-
1983
- 1983-11-30 JP JP58225904A patent/JPS60117770A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687381A (en) * | 1979-12-19 | 1981-07-15 | Ricoh Co Ltd | Photoelectric conversion element |
| JPS5853870A (en) * | 1981-09-26 | 1983-03-30 | Matsushita Electric Ind Co Ltd | Thin film solar battery |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60117770A (en) | 1985-06-25 |
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