JPS6417024A - Active device - Google Patents

Active device

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Publication number
JPS6417024A
JPS6417024A JP62173158A JP17315887A JPS6417024A JP S6417024 A JPS6417024 A JP S6417024A JP 62173158 A JP62173158 A JP 62173158A JP 17315887 A JP17315887 A JP 17315887A JP S6417024 A JPS6417024 A JP S6417024A
Authority
JP
Japan
Prior art keywords
ferroelectric layer
electrodes
electrode
high contrast
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62173158A
Other languages
Japanese (ja)
Inventor
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62173158A priority Critical patent/JPS6417024A/en
Publication of JPS6417024A publication Critical patent/JPS6417024A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain a sharp image having a high contrast by forming a ferroelectric layer as well as 1st and 2nd electrodes on an insulating substrate. CONSTITUTION:The ferroelectric layer 14 consisting of non-single crystalline TiBaO3 is provided on the insulating substrate 12 consisting of a glass substrate. The 1st electrode 13 consisting of Cr and the 2nd electrode 15 consisting of ITO are provided on the ferroelectric layer 14. The 1st and 2nd electrodes are not superposed in a vertical direction if the device is constructed in such a manner and, therefore, there is no short-circuit between the two electrodes by the defect of the ferroelectric layer 14. Since there is no annihilation of the image information by the leak current of the liquid crystal itself, the sharp image having high contrast is obtd.
JP62173158A 1987-07-10 1987-07-10 Active device Pending JPS6417024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173158A JPS6417024A (en) 1987-07-10 1987-07-10 Active device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173158A JPS6417024A (en) 1987-07-10 1987-07-10 Active device

Publications (1)

Publication Number Publication Date
JPS6417024A true JPS6417024A (en) 1989-01-20

Family

ID=15955172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173158A Pending JPS6417024A (en) 1987-07-10 1987-07-10 Active device

Country Status (1)

Country Link
JP (1) JPS6417024A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488262B1 (en) 1999-06-02 2002-12-03 Tokyo Electron Limited Gate valve for semiconductor processing system
US8075193B2 (en) 2007-03-27 2011-12-13 Brother Kogyo Kabushiki Kaisha Bearing
US8233145B2 (en) 2007-05-02 2012-07-31 Hitachi High-Technologies Corporation Pattern defect inspection apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488262B1 (en) 1999-06-02 2002-12-03 Tokyo Electron Limited Gate valve for semiconductor processing system
US8075193B2 (en) 2007-03-27 2011-12-13 Brother Kogyo Kabushiki Kaisha Bearing
US8233145B2 (en) 2007-05-02 2012-07-31 Hitachi High-Technologies Corporation Pattern defect inspection apparatus and method

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