JPS6459322A - Active panel - Google Patents

Active panel

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Publication number
JPS6459322A
JPS6459322A JP62217661A JP21766187A JPS6459322A JP S6459322 A JPS6459322 A JP S6459322A JP 62217661 A JP62217661 A JP 62217661A JP 21766187 A JP21766187 A JP 21766187A JP S6459322 A JPS6459322 A JP S6459322A
Authority
JP
Japan
Prior art keywords
electrode
liquid crystal
capacity
ferroelectric material
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62217661A
Other languages
Japanese (ja)
Inventor
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62217661A priority Critical patent/JPS6459322A/en
Publication of JPS6459322A publication Critical patent/JPS6459322A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain a sharp image of a high contrast by forming a ferroelectric material layer to the capacity smaller than the capacity of a liquid crystal layer. CONSTITUTION:An electrode 13 consisting of ITO is formed on an insulating substrate 12 consisting of a glass substrate and the ferroelectric material layer 14 consisting of a copolymer of vinylidene fluoride and trifluoroethylene is formed on the electrode 12. The liquid crystal layer F is held between a substrate D consisting of an electrode 15 made of Cr and a counter substrate E formed on an electrode 17 made of ITO on an insulating substrate 16 consisting of a glass substrate, on the ferroelectric material layer 14. The relation CLC/CF >1 is satisfied between the capacity CLC of the liquid crystal layer F and the capacity CF of the ferroelectric material layer 14. The erasing of the display data by the leak current of the liquid crystal itself is thereby obviated and the sharp image of the high contrast is obtd.
JP62217661A 1987-08-31 1987-08-31 Active panel Pending JPS6459322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62217661A JPS6459322A (en) 1987-08-31 1987-08-31 Active panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217661A JPS6459322A (en) 1987-08-31 1987-08-31 Active panel

Publications (1)

Publication Number Publication Date
JPS6459322A true JPS6459322A (en) 1989-03-07

Family

ID=16707739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62217661A Pending JPS6459322A (en) 1987-08-31 1987-08-31 Active panel

Country Status (1)

Country Link
JP (1) JPS6459322A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181403B1 (en) 1992-06-30 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6693696B1 (en) 1992-06-30 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181403B1 (en) 1992-06-30 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6693696B1 (en) 1992-06-30 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7567320B2 (en) 1992-06-30 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with liquid crystal

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