JPS6477029A - Active device - Google Patents

Active device

Info

Publication number
JPS6477029A
JPS6477029A JP11992188A JP11992188A JPS6477029A JP S6477029 A JPS6477029 A JP S6477029A JP 11992188 A JP11992188 A JP 11992188A JP 11992188 A JP11992188 A JP 11992188A JP S6477029 A JPS6477029 A JP S6477029A
Authority
JP
Japan
Prior art keywords
electrode
ferroelectric material
material layer
active device
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11992188A
Other languages
Japanese (ja)
Inventor
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP11992188A priority Critical patent/JPS6477029A/en
Publication of JPS6477029A publication Critical patent/JPS6477029A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain an image being distinct and having a high contrast by providing an island-like ferroelectric material layer so as to connect a first electrode A and a first electrode B which are provided on an insulating substrate, and also, providing a second electrode so as to come into contact with the first electrode B. CONSTITUTION:On an insulating substrate 12 consisting of a glass substrate, a ferroelectric material layer 14 consisting of a copolymer of a VDF and a TrFE is provided, and on the ferroelectric material, the first electrode A 13 and the first electrode B 18, consisting of an ITO are provided, and on the first electrode B 18, the second electrode 15 is provided. An active device uses the ferroelectric material layer 14 existing between the first electrodes A, B, 13, 18, as an active layer, therefore, a distance between both the electrodes is formed so as to be constant, by which in the substrate, the active device having the same characteristic is formed easily. In such a way, an active display having a uniform display performance can be formed extending over a large area.
JP11992188A 1987-06-29 1988-05-17 Active device Pending JPS6477029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11992188A JPS6477029A (en) 1987-06-29 1988-05-17 Active device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16158487 1987-06-29
JP11992188A JPS6477029A (en) 1987-06-29 1988-05-17 Active device

Publications (1)

Publication Number Publication Date
JPS6477029A true JPS6477029A (en) 1989-03-23

Family

ID=26457578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11992188A Pending JPS6477029A (en) 1987-06-29 1988-05-17 Active device

Country Status (1)

Country Link
JP (1) JPS6477029A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7615913B2 (en) 2006-02-23 2009-11-10 Tdk Corporation Composite electronic component
US8058965B2 (en) 2005-06-20 2011-11-15 Epcos Ag Electrical multilayer component with reduced parasitic capacitance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058965B2 (en) 2005-06-20 2011-11-15 Epcos Ag Electrical multilayer component with reduced parasitic capacitance
US7615913B2 (en) 2006-02-23 2009-11-10 Tdk Corporation Composite electronic component

Similar Documents

Publication Publication Date Title
TW324862B (en) Liquid display apparatus
CA2113958A1 (en) Semiconductor device and method for manufacturing the same
CA2180105A1 (en) Active Matrix Type Liquid Crystal Display System
EP0244530A3 (en) Thin oxide fuse in an integrated circuit
SE8501605L (en) CAPACITIVE SWITCHES
TW362274B (en) Semiconductor apparatus and manufacturing method thereof used for the pixel switches or driving circuit of a kind of active matrix type display apparatus
EP0381428A3 (en) Active matrix substrate and active matrix display display apparatus
EP0376648A3 (en) A liquid crystal display apparatus
JPS6477029A (en) Active device
GB2090036B (en) Liquid crystal display device
JPS567480A (en) Film transistor
JPS5769778A (en) Semiconductor device
JPS6468726A (en) Thin film transistor and its manufacture
JPS6435529A (en) Active matrix cell and its manufacture
JPS6417024A (en) Active device
JPS6459323A (en) Active device
JPS6432234A (en) Production of active matrix type liquid crystal display device
JPS6467970A (en) Thin film transistor
JPS6459322A (en) Active panel
JPS6459326A (en) Active device
JPS6459328A (en) Active device
TW325572B (en) Plasma-addressed display device and manufacturing method thereof
JPS6468721A (en) Optical modulating element
JPS6468968A (en) Thin film transistor
JPS6429819A (en) Active matrix cell and its production