JPS6477029A - Active device - Google Patents
Active deviceInfo
- Publication number
- JPS6477029A JPS6477029A JP11992188A JP11992188A JPS6477029A JP S6477029 A JPS6477029 A JP S6477029A JP 11992188 A JP11992188 A JP 11992188A JP 11992188 A JP11992188 A JP 11992188A JP S6477029 A JPS6477029 A JP S6477029A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ferroelectric material
- material layer
- active device
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
Abstract
PURPOSE:To obtain an image being distinct and having a high contrast by providing an island-like ferroelectric material layer so as to connect a first electrode A and a first electrode B which are provided on an insulating substrate, and also, providing a second electrode so as to come into contact with the first electrode B. CONSTITUTION:On an insulating substrate 12 consisting of a glass substrate, a ferroelectric material layer 14 consisting of a copolymer of a VDF and a TrFE is provided, and on the ferroelectric material, the first electrode A 13 and the first electrode B 18, consisting of an ITO are provided, and on the first electrode B 18, the second electrode 15 is provided. An active device uses the ferroelectric material layer 14 existing between the first electrodes A, B, 13, 18, as an active layer, therefore, a distance between both the electrodes is formed so as to be constant, by which in the substrate, the active device having the same characteristic is formed easily. In such a way, an active display having a uniform display performance can be formed extending over a large area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11992188A JPS6477029A (en) | 1987-06-29 | 1988-05-17 | Active device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16158487 | 1987-06-29 | ||
JP11992188A JPS6477029A (en) | 1987-06-29 | 1988-05-17 | Active device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477029A true JPS6477029A (en) | 1989-03-23 |
Family
ID=26457578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11992188A Pending JPS6477029A (en) | 1987-06-29 | 1988-05-17 | Active device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477029A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7615913B2 (en) | 2006-02-23 | 2009-11-10 | Tdk Corporation | Composite electronic component |
US8058965B2 (en) | 2005-06-20 | 2011-11-15 | Epcos Ag | Electrical multilayer component with reduced parasitic capacitance |
-
1988
- 1988-05-17 JP JP11992188A patent/JPS6477029A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8058965B2 (en) | 2005-06-20 | 2011-11-15 | Epcos Ag | Electrical multilayer component with reduced parasitic capacitance |
US7615913B2 (en) | 2006-02-23 | 2009-11-10 | Tdk Corporation | Composite electronic component |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW324862B (en) | Liquid display apparatus | |
CA2113958A1 (en) | Semiconductor device and method for manufacturing the same | |
CA2180105A1 (en) | Active Matrix Type Liquid Crystal Display System | |
EP0244530A3 (en) | Thin oxide fuse in an integrated circuit | |
SE8501605L (en) | CAPACITIVE SWITCHES | |
TW362274B (en) | Semiconductor apparatus and manufacturing method thereof used for the pixel switches or driving circuit of a kind of active matrix type display apparatus | |
EP0381428A3 (en) | Active matrix substrate and active matrix display display apparatus | |
EP0376648A3 (en) | A liquid crystal display apparatus | |
JPS6477029A (en) | Active device | |
GB2090036B (en) | Liquid crystal display device | |
JPS567480A (en) | Film transistor | |
JPS5769778A (en) | Semiconductor device | |
JPS6468726A (en) | Thin film transistor and its manufacture | |
JPS6435529A (en) | Active matrix cell and its manufacture | |
JPS6417024A (en) | Active device | |
JPS6459323A (en) | Active device | |
JPS6432234A (en) | Production of active matrix type liquid crystal display device | |
JPS6467970A (en) | Thin film transistor | |
JPS6459322A (en) | Active panel | |
JPS6459326A (en) | Active device | |
JPS6459328A (en) | Active device | |
TW325572B (en) | Plasma-addressed display device and manufacturing method thereof | |
JPS6468721A (en) | Optical modulating element | |
JPS6468968A (en) | Thin film transistor | |
JPS6429819A (en) | Active matrix cell and its production |