JPS6459328A - Active device - Google Patents

Active device

Info

Publication number
JPS6459328A
JPS6459328A JP62217668A JP21766887A JPS6459328A JP S6459328 A JPS6459328 A JP S6459328A JP 62217668 A JP62217668 A JP 62217668A JP 21766887 A JP21766887 A JP 21766887A JP S6459328 A JPS6459328 A JP S6459328A
Authority
JP
Japan
Prior art keywords
electrode
substrate
material layer
ferroelectric material
adhesiveness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62217668A
Other languages
Japanese (ja)
Inventor
Nobuyuki Shimotomai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62217668A priority Critical patent/JPS6459328A/en
Publication of JPS6459328A publication Critical patent/JPS6459328A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To improve the adhesiveness between an insulating substrate and electrode and to obtain a sharp image having a high contrast ratio by forming the electrode on the substrate and forming a ferroelectric material layer via a surfactant on the electrode. CONSTITUTION:The electrode 13 consisting of ITO is formed on the insulating substrate 12 consisting of a glass substrate and after the surfactant 21 having a polar group is formed on the electrode 13, the ferroelectric material layer 14 is formed thereon by coating a copolymer of vinylidene fluoride and trifluoroethylene thereon and baking the coating. The electrode 15 consisting of Cr is finally formed. The adhesiveness between the ferroelectric material layer 14 and the substrate 12 or the electrode 15 is thereby improved and the sharp image having the high contrast ratio is obtd.
JP62217668A 1987-08-31 1987-08-31 Active device Pending JPS6459328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62217668A JPS6459328A (en) 1987-08-31 1987-08-31 Active device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217668A JPS6459328A (en) 1987-08-31 1987-08-31 Active device

Publications (1)

Publication Number Publication Date
JPS6459328A true JPS6459328A (en) 1989-03-07

Family

ID=16707848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62217668A Pending JPS6459328A (en) 1987-08-31 1987-08-31 Active device

Country Status (1)

Country Link
JP (1) JPS6459328A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181403B1 (en) 1992-06-30 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6693696B1 (en) 1992-06-30 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181403B1 (en) 1992-06-30 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6693696B1 (en) 1992-06-30 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7567320B2 (en) 1992-06-30 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with liquid crystal

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