JPS6459325A - Active device - Google Patents
Active deviceInfo
- Publication number
- JPS6459325A JPS6459325A JP62217664A JP21766487A JPS6459325A JP S6459325 A JPS6459325 A JP S6459325A JP 62217664 A JP62217664 A JP 62217664A JP 21766487 A JP21766487 A JP 21766487A JP S6459325 A JPS6459325 A JP S6459325A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thickness
- material layer
- insulating substrate
- ferroelectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 abstract 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 abstract 1
- 229920001577 copolymer Polymers 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Liquid Crystal (AREA)
Abstract
PURPOSE:To eliminate such a step as to generate dielectric breakdown and to improve reliability by forming an insulator layer which exhibits a ferroelectric property on a substrate at the film thickness larger than the thickness of a 1st electrode and forming the 2nd electrode on the insulator layer. CONSTITUTION:The 1st electrode 13 consisting of a transparent conductive film made of ITO, etc., is formed at a thickness d1 on the insulating substrate 12 consisting of a glass substrate. The ferroelectric material layer 14 consisting of the copolymer of vinylidene fluoride and trifluoroethylene is coated at the thickness d2 larger than the thickness of the 1st electrode 13 on the insulating substrate 12 and the insulating substrate 12 is held horizontal to flatten the surface of the ferroelectric material layer 14. The 2nd electrode 15 consisting or Cr is then formed on the ferroelectric material layer 14. The generation of the dielectric breakdown by concn. of electric fields to the edge part of the 1st electrode 13 when a voltage is impressed to the device is thereby obviated and the reliability is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62217664A JPS6459325A (en) | 1987-08-31 | 1987-08-31 | Active device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62217664A JPS6459325A (en) | 1987-08-31 | 1987-08-31 | Active device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6459325A true JPS6459325A (en) | 1989-03-07 |
Family
ID=16707783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62217664A Pending JPS6459325A (en) | 1987-08-31 | 1987-08-31 | Active device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6459325A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6181403B1 (en) | 1992-06-30 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6693696B1 (en) | 1992-06-30 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
-
1987
- 1987-08-31 JP JP62217664A patent/JPS6459325A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6181403B1 (en) | 1992-06-30 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6693696B1 (en) | 1992-06-30 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US7567320B2 (en) | 1992-06-30 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device with liquid crystal |
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