JPS644012A - Through-type capacitor - Google Patents

Through-type capacitor

Info

Publication number
JPS644012A
JPS644012A JP62157637A JP15763787A JPS644012A JP S644012 A JPS644012 A JP S644012A JP 62157637 A JP62157637 A JP 62157637A JP 15763787 A JP15763787 A JP 15763787A JP S644012 A JPS644012 A JP S644012A
Authority
JP
Japan
Prior art keywords
external housing
tracking
sectional shape
cross
circumferential edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62157637A
Other languages
Japanese (ja)
Inventor
Mamoru Kurokuzuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62157637A priority Critical patent/JPS644012A/en
Priority to US07/200,065 priority patent/US4872085A/en
Priority to KR1019880006733A priority patent/KR910005755B1/en
Publication of JPS644012A publication Critical patent/JPS644012A/en
Pending legal-status Critical Current

Links

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

PURPOSE:To prevent a creeping discharge at an external housing and a tracking from being caused even when a high voltage is impressed between electrodes in a humid atmosphere by a method wherein a cross-sectional shape at a circumferential edge situated on the remote side from a conductor sheet of the external housing is formed to be a nearly semicircular curved face and an angular part is removed. CONSTITUTION:A cross-sectional shape at a circumferential edge of an external housing 4 is formed to be a nearly semicircular smooth curved face. If the cross-sectional shape at the circumferential edge of this external housing is angular, a creeping discharge on the surface of the external housing is caused from a part where an electric field is concentrated when a high voltage is impressed between a central conductor 2 and a grounding electrode sheet 3; a tracking is caused. If the cross-sectional shape at the circumferential edge of the external housing is formed to be the nearly semicircular smooth curved face, the electric field is hardly concentrated. If an external face of the external housing is coated with a film of a tracking-resistant resin 7, e.g. an epoxy resin-related insulating resin, the tracking-resistant performance is improved.
JP62157637A 1987-06-05 1987-06-26 Through-type capacitor Pending JPS644012A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62157637A JPS644012A (en) 1987-06-26 1987-06-26 Through-type capacitor
US07/200,065 US4872085A (en) 1987-06-05 1988-05-27 Through-type capacitor with improved anti-tracking performance
KR1019880006733A KR910005755B1 (en) 1987-06-05 1988-06-04 Through-type capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62157637A JPS644012A (en) 1987-06-26 1987-06-26 Through-type capacitor

Publications (1)

Publication Number Publication Date
JPS644012A true JPS644012A (en) 1989-01-09

Family

ID=15654075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62157637A Pending JPS644012A (en) 1987-06-05 1987-06-26 Through-type capacitor

Country Status (1)

Country Link
JP (1) JPS644012A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7911832B2 (en) 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US9812184B2 (en) 2007-10-31 2017-11-07 New York University Current induced spin-momentum transfer stack with dual insulating layers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7911832B2 (en) 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US8363465B2 (en) 2003-08-19 2013-01-29 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US9812184B2 (en) 2007-10-31 2017-11-07 New York University Current induced spin-momentum transfer stack with dual insulating layers

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