JPS645061A - Manufacture of image sensor - Google Patents
Manufacture of image sensorInfo
- Publication number
- JPS645061A JPS645061A JP62161475A JP16147587A JPS645061A JP S645061 A JPS645061 A JP S645061A JP 62161475 A JP62161475 A JP 62161475A JP 16147587 A JP16147587 A JP 16147587A JP S645061 A JPS645061 A JP S645061A
- Authority
- JP
- Japan
- Prior art keywords
- film
- deposition method
- electrodes
- partial deposition
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To provide semiconductor films having accurate configurations, and a transparent common electrode having less variance in film thickness, by forming semiconductor films having gentle inclination at the ends of discrete electrodes by means of a partial deposition method using appropriate mask. CONSTITUTION:A metallic thin film is vapor deposited all over the surface of an insulating substrate 21 of glass or the like. The film is then photoetched so that a multiplicity of discrete electrodes 23, lead lines 24 and common electrodes 25 are formed simultaneously in respective patterns as desired. Then, a semiconductor film 27 of amorphous silicon or the like is formed by a partial deposition method so as to cover all the discrete electrodes 23. A transparent common electrode film 28 is then formed by a partial deposition method so as to cover the film 27 and the electrodes 25 almost totally. Metallic thin films 29a, 29b are deposited one on another by a partial deposition method along one end of the film 28 with respect to the shorter sides. After the films 29a, 29b are patterned, the film 28 is also patterned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62161475A JPH07101735B2 (en) | 1987-06-29 | 1987-06-29 | Method of manufacturing image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62161475A JPH07101735B2 (en) | 1987-06-29 | 1987-06-29 | Method of manufacturing image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS645061A true JPS645061A (en) | 1989-01-10 |
| JPH07101735B2 JPH07101735B2 (en) | 1995-11-01 |
Family
ID=15735796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62161475A Expired - Lifetime JPH07101735B2 (en) | 1987-06-29 | 1987-06-29 | Method of manufacturing image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07101735B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101284354B1 (en) * | 2012-10-22 | 2013-07-08 | 주식회사 엠티에스 | Duality cold cycle of heat pump system with cascade heat exchanger |
| JP2014067768A (en) * | 2012-09-25 | 2014-04-17 | Fujifilm Corp | Solid-state image sensor and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295658A (en) * | 1985-06-24 | 1986-12-26 | Mitsubishi Electric Corp | Manufacture of photoelectric conversion device |
-
1987
- 1987-06-29 JP JP62161475A patent/JPH07101735B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295658A (en) * | 1985-06-24 | 1986-12-26 | Mitsubishi Electric Corp | Manufacture of photoelectric conversion device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014067768A (en) * | 2012-09-25 | 2014-04-17 | Fujifilm Corp | Solid-state image sensor and method of manufacturing the same |
| KR101284354B1 (en) * | 2012-10-22 | 2013-07-08 | 주식회사 엠티에스 | Duality cold cycle of heat pump system with cascade heat exchanger |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07101735B2 (en) | 1995-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54154289A (en) | Manufacture of thin-film transistor array | |
| JPS6435421A (en) | Thin film transistor array | |
| JPS5355986A (en) | Manufacture of semiconductor device | |
| JPS645061A (en) | Manufacture of image sensor | |
| JPS5688317A (en) | Manufacture of semiconductor device | |
| JPS6425433A (en) | Manufacture of semiconductor device | |
| JPS57138638A (en) | Photoetching mask | |
| JPS575328A (en) | Growing method for semiconductor crystal | |
| JPS5710224A (en) | Forming method for silicone single crystalline film | |
| JPS5317583A (en) | Process for forming vacuum evaporation layer on largeesized substrate surface | |
| JPS5784876A (en) | Manufacture of thermal head | |
| JPS6431457A (en) | Manufacture of thin film transistor | |
| JPS577925A (en) | Manufacture of thin film integrated circuit | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS5713776A (en) | Photovoltaic device | |
| JPS5568674A (en) | Fabrication of charge coupled device | |
| JPS56133847A (en) | Metal processing | |
| JPS5710225A (en) | Forming method for silicon single crystalline film | |
| JPS5745289A (en) | Production of multidimentional semiconductor device | |
| JPS57164713A (en) | Manufacture of substrate for liquid crystal cell having patterned electrode and patterned orienting film | |
| JPS53108771A (en) | Semiconductor device | |
| JPS5730382A (en) | Manufacture of solid state image pickup device | |
| JPS6412503A (en) | Electronic component and manufacture thereof | |
| JPS57128950A (en) | Manufacture ot of thin film element | |
| JPS57133759A (en) | Optical sensor array |