JPS645061A - Manufacture of image sensor - Google Patents

Manufacture of image sensor

Info

Publication number
JPS645061A
JPS645061A JP62161475A JP16147587A JPS645061A JP S645061 A JPS645061 A JP S645061A JP 62161475 A JP62161475 A JP 62161475A JP 16147587 A JP16147587 A JP 16147587A JP S645061 A JPS645061 A JP S645061A
Authority
JP
Japan
Prior art keywords
film
deposition method
electrodes
partial deposition
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62161475A
Other languages
Japanese (ja)
Other versions
JPH07101735B2 (en
Inventor
Hitoshi Chiyoma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62161475A priority Critical patent/JPH07101735B2/en
Publication of JPS645061A publication Critical patent/JPS645061A/en
Publication of JPH07101735B2 publication Critical patent/JPH07101735B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To provide semiconductor films having accurate configurations, and a transparent common electrode having less variance in film thickness, by forming semiconductor films having gentle inclination at the ends of discrete electrodes by means of a partial deposition method using appropriate mask. CONSTITUTION:A metallic thin film is vapor deposited all over the surface of an insulating substrate 21 of glass or the like. The film is then photoetched so that a multiplicity of discrete electrodes 23, lead lines 24 and common electrodes 25 are formed simultaneously in respective patterns as desired. Then, a semiconductor film 27 of amorphous silicon or the like is formed by a partial deposition method so as to cover all the discrete electrodes 23. A transparent common electrode film 28 is then formed by a partial deposition method so as to cover the film 27 and the electrodes 25 almost totally. Metallic thin films 29a, 29b are deposited one on another by a partial deposition method along one end of the film 28 with respect to the shorter sides. After the films 29a, 29b are patterned, the film 28 is also patterned.
JP62161475A 1987-06-29 1987-06-29 Method of manufacturing image sensor Expired - Lifetime JPH07101735B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62161475A JPH07101735B2 (en) 1987-06-29 1987-06-29 Method of manufacturing image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62161475A JPH07101735B2 (en) 1987-06-29 1987-06-29 Method of manufacturing image sensor

Publications (2)

Publication Number Publication Date
JPS645061A true JPS645061A (en) 1989-01-10
JPH07101735B2 JPH07101735B2 (en) 1995-11-01

Family

ID=15735796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62161475A Expired - Lifetime JPH07101735B2 (en) 1987-06-29 1987-06-29 Method of manufacturing image sensor

Country Status (1)

Country Link
JP (1) JPH07101735B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101284354B1 (en) * 2012-10-22 2013-07-08 주식회사 엠티에스 Duality cold cycle of heat pump system with cascade heat exchanger
JP2014067768A (en) * 2012-09-25 2014-04-17 Fujifilm Corp Solid-state image sensor and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295658A (en) * 1985-06-24 1986-12-26 Mitsubishi Electric Corp Manufacture of photoelectric conversion device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295658A (en) * 1985-06-24 1986-12-26 Mitsubishi Electric Corp Manufacture of photoelectric conversion device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014067768A (en) * 2012-09-25 2014-04-17 Fujifilm Corp Solid-state image sensor and method of manufacturing the same
KR101284354B1 (en) * 2012-10-22 2013-07-08 주식회사 엠티에스 Duality cold cycle of heat pump system with cascade heat exchanger

Also Published As

Publication number Publication date
JPH07101735B2 (en) 1995-11-01

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