JPS60115259A - Photoelectric conversion device and manufacture thereof - Google Patents
Photoelectric conversion device and manufacture thereofInfo
- Publication number
- JPS60115259A JPS60115259A JP58222952A JP22295283A JPS60115259A JP S60115259 A JPS60115259 A JP S60115259A JP 58222952 A JP58222952 A JP 58222952A JP 22295283 A JP22295283 A JP 22295283A JP S60115259 A JPS60115259 A JP S60115259A
- Authority
- JP
- Japan
- Prior art keywords
- light
- shielding film
- film
- forming
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 150000004820 halides Chemical class 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 35
- 239000011521 glass Substances 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 1
- 229910001120 nichrome Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ファクシミリの送信側宿゛に用いる、原稿と
1対1に対応する大きさで原稿に密着した光電変換装置
およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a photoelectric conversion device that is used as a transmitting host in a facsimile and is in close contact with a document in a size that corresponds one-to-one with the document, and a method for manufacturing the same.
従来例の構成とその問題点
従来、ファクシミリ送信機の読み取り系tよ、第1図に
示すように、IC技術等で製造されるMO8素子やCO
D等のイメージセンサ1を用い、原稿2をけい先月で照
明し、その反射光をレンズ系3によってイメージセンサ
1上に縮小結像して光電変換する方法をとっている。こ
の方法は、レンズ系を使用するので縮率が大きい場合、
原稿からセンサまでの光路長が大きく装置の小形化に不
利であること、画面周辺部の分解能が悪いこと及び光量
が少なくなることなどの欠点を有していた。Conventional structure and its problems Conventionally, as shown in Figure 1, the reading system of a facsimile transmitter uses an MO8 element manufactured using IC technology, etc.
A method is used in which an image sensor 1 such as D is used to illuminate a document 2 at a distance, and the reflected light is reduced to form an image on the image sensor 1 by a lens system 3 and photoelectrically converted. This method uses a lens system, so if the reduction ratio is large,
The optical path length from the document to the sensor is long, which is disadvantageous for downsizing the device, and the resolution at the periphery of the screen is poor and the amount of light is small.
そこで、原稿とイメージセンサが1対1に対応する密着
形イメージセンサが提案され、その結果原稿像を縮小結
像する必要がなくなり、センサまでの光路長を短くでき
るために装置の小形化が可能となった。原稿と等倍の一
次元イメージセンサいわゆる密着形イメージセンサの読
み取9方式としては、光フアイバーアレイを用いる方式
(第2図)と用いない方式(第3図)が提案されている
。Therefore, a close-contact image sensor was proposed in which the document and image sensor correspond one-to-one.As a result, there is no need to reduce the document image and the optical path length to the sensor can be shortened, making it possible to downsize the device. It became. As nine reading methods for a one-dimensional image sensor of the same size as the original, so-called contact type image sensor, a method using an optical fiber array (FIG. 2) and a method not using an optical fiber array (FIG. 3) have been proposed.
前者は、画像情報を光フアイバーアレイを用いてセンサ
に導いて読み取るので、密着形イメージセンサ自体の構
成は、光センサアレイだけを組み込んだ簡単なものにな
る。すなわち、第2図に示すごとく、原稿2上にLED
アレイ6、光フアイバーアレイ6、原稿と1対1に対応
する光電変換装置4を構成したものである。In the former case, image information is guided to a sensor using an optical fiber array and read, so the structure of the contact type image sensor itself is simple, incorporating only the optical sensor array. That is, as shown in FIG. 2, an LED is placed on the document 2.
This configuration includes an array 6, an optical fiber array 6, and a photoelectric conversion device 4 in one-to-one correspondence with an original.
一方後者は、光センサ1素子ごとに照明窓を開け、そこ
から入射した光<X)を原稿面で反射させて読み取ると
いう原理でいわば光学系を内蔵した密着形イメージセン
サである。第3図において、8は遮光膜、9は透明絶縁
膜、10は光(勾の反射光を感知する光センサ、11は
電極、12は照明窓、7は透明絶縁基板、13は透明耐
磨耗層である。On the other hand, the latter is a close-contact type image sensor with a built-in optical system, based on the principle that an illumination window is opened for each optical sensor element, and the light incident thereon is reflected by the surface of the document and read. In Fig. 3, 8 is a light-shielding film, 9 is a transparent insulating film, 10 is a light sensor that detects reflected light, 11 is an electrode, 12 is an illumination window, 7 is a transparent insulating substrate, and 13 is a transparent abrasive film. It is a wear layer.
従って後者は、光ファイバ等の光学系が全く不要なため
に低コスト化がはがれ、がっ光電変換系の体積をさらに
小さくできることになる。また用いている光学系が前者
に比べさらに簡単で色収差がないため、光量伝達率も前
者の2〜3倍にあたる10%近く得られカラー原稿の読
敗りにも対応できる特徴をもっている。Therefore, since the latter does not require any optical system such as an optical fiber, it is possible to reduce the cost and further reduce the volume of the photoelectric conversion system. Furthermore, since the optical system used is simpler than the former and has no chromatic aberration, a light transmission rate of nearly 10%, which is 2 to 3 times that of the former, can be obtained, making it possible to cope with failure in reading color originals.
一方、密着形イメージセンサを製造するという観点から
すれば、光フフイバアレイを用いない方式の密着形イメ
ージセンサは、それを用いる方式のものに比べ光学系が
内蔵されている構成のため、製造プロセスに精度が要求
されるということや製造プロセスが複雑になる。そのだ
めに生じる問題の1つは、そのイメージセンサの構成上
、遮光膜8が必要であり、かつその上に光導電素子を形
成しなければならないことである。On the other hand, from the perspective of manufacturing contact image sensors, contact image sensors that do not use an optical fiber array have a built-in optical system compared to those that do, so the manufacturing process is much easier. This requires precision and complicates the manufacturing process. One problem that arises is that the image sensor requires a light-shielding film 8 due to its structure, and a photoconductive element must be formed thereon.
第4図に第3図の構造を用いた光電変換アレーの部分の
断面を示す。遮光膜8は可視光すべてを遮光するために
Cr等の金属蒸着よりなり、かつその上に形成する光セ
ンサ10と電気的に絶縁するために、光センサ10と遮
光膜8間に絶縁膜9が形成されている。このように光セ
ンサ10は、絶縁膜9をへたてて導電体よりなる金属遮
光膜8の上に形成されているので、元信号をセンサから
電気的に取り出す時に、センサ1oの電極11と金属蒸
着膜よりなる遮光膜8の間に生じている容量成分が問題
となることが判明した。FIG. 4 shows a cross section of a photoelectric conversion array using the structure shown in FIG. 3. The light shielding film 8 is made of vapor-deposited metal such as Cr to block all visible light, and an insulating film 9 is provided between the light sensor 10 and the light shielding film 8 to electrically insulate the light sensor 10 formed thereon. is formed. In this way, the optical sensor 10 is formed on the metal light-shielding film 8 made of a conductor with the insulating film 9 flattened, so that when the original signal is electrically extracted from the sensor, the electrode 11 of the sensor 1o It has been found that the capacitance component occurring between the light shielding films 8 made of vapor-deposited metal films poses a problem.
第4図に示すように■、■・・・・・・0 、@と並ん
だ光センサ部の信号の読み出しは、第6図に示すように
、■−〇間に電圧が印加されている間(第6図Aのtの
間)に第6図の光センサ選択スイ、ノチ20を光センサ
部■から順に切り換えて出力し、時系列の信号とするこ
とによって行う。第6図において、14は負荷抵抗、1
5は出力端子、16は電極11と遮光膜8間の容量、1
9は入力市川である。As shown in Fig. 4, the signals of the optical sensor section lined up with ■, ■...0, @ are read when a voltage is applied between ■ and 〇, as shown in Fig. 6. This is done by sequentially switching the optical sensor selection switch and the notch 20 in FIG. 6 from the optical sensor section (2) during the interval (between t in FIG. 6A) to output a time-series signal. In Fig. 6, 14 is a load resistance, 1
5 is the output terminal, 16 is the capacitance between the electrode 11 and the light shielding film 8, 1
9 is the input Ichikawa.
ところで、第6図に示す読み出しにおいて上記のように
電極11と金属蒸着膜(遮光膜)8間に生じた容量成分
のだめに、■−〇間の入力(第6図A)に対し、■−@
間の出力は、第5図Bのようになる。すなわち、信号読
み出しの最初の方の信号には容量成分が重畳して、本来
の光信号(第6図C)より高い出力を信号として送るこ
とになってしまう。By the way, in the readout shown in FIG. 6, due to the capacitance component generated between the electrode 11 and the metal vapor deposited film (light-shielding film) 8 as described above, for the input between ■-〇 (FIG. 6A), ■- @
The output between them is as shown in FIG. 5B. That is, a capacitance component is superimposed on the signal at the beginning of the signal readout, and a higher output than the original optical signal (FIG. 6C) is sent as a signal.
発明の目的
本発明は、以上に述べたように、光センサ電極と遮光膜
との間に生じる容量成分が除去された光学系を内蔵し、
密着形イメージセンサに好適な光電変換装置およびその
製造方法を提供することを目的とする。Purpose of the Invention As described above, the present invention incorporates an optical system in which the capacitance component generated between the photosensor electrode and the light shielding film is removed,
It is an object of the present invention to provide a photoelectric conversion device suitable for a contact type image sensor and a method for manufacturing the same.
発明の構成
本発明は、透光性絶縁基板上の主走査方向に一列になら
ぶ複数個の照明窓を有する遮光膜を有しこの遮光膜の上
に前記遮光膜を電気的に接地する電極部が形成され、前
記電極部を除く遮光膜上の透光性電気絶縁膜上に主走査
方向に一列に形成された光導電素子を有する光電変換装
置であって、かつこの装置の製造に好適な製造方法を提
供するものである。Structure of the Invention The present invention includes a light-shielding film having a plurality of illumination windows arranged in a line in the main scanning direction on a light-transmitting insulating substrate, and an electrode portion on the light-shielding film for electrically grounding the light-shielding film. is formed, and has photoconductive elements formed in a line in the main scanning direction on a light-transmitting electrical insulating film on a light-shielding film excluding the electrode portion, and a photoelectric conversion device suitable for manufacturing this device. A manufacturing method is provided.
実施例の説明
−第4図に示す電極11すなわち■−■間には、第6図
にも示しだように■−@間と@−■間に存在する直列の
容量16が、光センサ1oに対し並列につながっている
。Description of the Embodiment - Between the electrode 11 shown in FIG. 4, that is, between ■ and ■, as shown in FIG. are connected in parallel.
このような構成で本発明者らは、第4図の@(遮光膜8
)を電気的に接地することを試みた。With such a configuration, the present inventors constructed @(light shielding film 8
) was attempted to be electrically grounded.
すなわち第6図の0点を接地することに相当するが、そ
の結果、第6図Aのような入力に対し、■−@間の出力
は、第6図Cのようにな月1とんど電気的入力に追随し
ていることがわかった。こJlは遮光膜8を接地するこ
とによって、光センサ10の電極11と遮光膜8間に存
在する容量が除去さ、れ、高周波特性が向上しているた
めである。遮光膜8の接地は、第7図に示したように、
たとえば光電変換装置の基板の両端に絶縁膜9を形成し
ない部分を設け、その部分に接地電極部18を設けこの
電極部18を電気的に接地する構成にして行う。In other words, this corresponds to grounding the 0 point in Figure 6, but as a result, for an input like Figure 6 A, the output between ■ and @ will be 1 ton per month as shown in Figure 6 C. It was found that it follows the electrical input. This Jl is because by grounding the light shielding film 8, the capacitance existing between the electrode 11 of the optical sensor 10 and the light shielding film 8 is removed, and the high frequency characteristics are improved. The grounding of the light shielding film 8 is as shown in FIG.
For example, a configuration is employed in which a portion where the insulating film 9 is not formed is provided at both ends of the substrate of the photoelectric conversion device, and a ground electrode portion 18 is provided in that portion, and this electrode portion 18 is electrically grounded.
実際、第7図に示したような構成を実現するだめには、
従来の遮光膜8を接地しない場合の)’l’二電変電変
換装置造方法を考慮しなければならないのは言うまでも
ない。たとえば、遮光膜8上に形成する光センサ都10
を構成する光導電膜として、Cd5−CdSe等を主成
分とするII −Vl族化合物を用いる場合、次のよう
なことに注意して製造方法を工夫するのが望ましい。I
I −Vl族化合物の明抵抗と暗抵抗の比を大きくする
ために、それらの膜を融剤である■族のノ・ロゲン化物
の蒸気を含む雰−囲気中で前記II−Vl族化合物と前
記■族のノ・ロゲン化物との共晶温度以上の温度で熱処
理を行う。In fact, in order to realize the configuration shown in Figure 7,
Needless to say, it is necessary to consider the method of manufacturing the 'l' two-electric transformer (in the case where the conventional light-shielding film 8 is not grounded). For example, the optical sensor layer 10 formed on the light shielding film 8
When a II-Vl group compound containing Cd5-CdSe or the like as a main component is used as the photoconductive film constituting the photoconductive film, it is desirable to devise a manufacturing method with the following points in mind. I
In order to increase the ratio of the bright resistance to the dark resistance of the I-Vl group compound, these films are coated with the II-Vl group compound in an atmosphere containing vapor of a group I-group norogenide, which is a fluxing agent. The heat treatment is performed at a temperature higher than the eutectic temperature with the above-mentioned group (Ⅰ) chloride.
たいていの場合、この熱処理時の温度は500〜6o○
0Cと高温であり、かつ■族のノ・ロゲン化物雰囲気中
というきわめて反応性の高い状況下にあるので、金属蒸
着膜よりなる遮光膜8の表面が変化し、遮光膜80表面
から電気的コンタクトをとることができなくなる。従っ
て前記熱処理時には金属蒸着膜で構成されている遮光膜
8の接地の電極部はハロゲン化物雰囲気にさらされない
ように絶縁膜等で保護しておく必要がある。このだめに
、上記熱処理のあとで接地用電極窓形成のだめの絶縁膜
9を選択的に除去するホトエラチン!工程を行うのが望
ましい。In most cases, the temperature during this heat treatment is 500~6o○
Because the temperature is as high as 0C and the atmosphere is extremely reactive, such as in the atmosphere of group (III) chlorides, the surface of the light shielding film 8 made of a metal vapor deposited film changes, and electrical contact is made from the surface of the light shielding film 80. You will not be able to take it. Therefore, during the heat treatment, it is necessary to protect the grounded electrode portion of the light shielding film 8 made of a metal vapor deposited film with an insulating film or the like so that it is not exposed to the halide atmosphere. To avoid this, photoeratin is used to selectively remove the insulating film 9 for forming the grounding electrode window after the heat treatment. It is desirable to carry out the process.
しかし、前述の光導電膜としてたとえばアモルファスシ
リコン等を用い、光導電膜を高温で活性な雰囲気中を経
ずに形成できる場合はその限りではない。この場合はあ
らかじめ、遮光膜8の接地のだめの電極形成部にマスク
をして絶縁膜を形成しないようにしておけば、その接地
電極部を光導電膜形成時にもマスクするだけであるいは
マスクさえせずに露出したままで製造できる。However, this is not the case if, for example, amorphous silicon or the like is used as the photoconductive film and the photoconductive film can be formed at high temperature without being exposed to an active atmosphere. In this case, if you mask the ground electrode forming part of the light-shielding film 8 in advance to prevent the formation of an insulating film, you can mask the ground electrode part when forming the photoconductive film, or even mask it. It can be manufactured with the material exposed.
第8図には、本発明の構造を実現するための方法すなわ
ちIt−Vl族化合物を用い上記のような処理を行って
光導電膜を形成し、遮光膜への接地配線がなされた光電
変換装置の製造工程を示す。第9図は本発明の構造を実
現する他の方法すなわち露出した金属遮光膜80表面を
光導電膜形成時に電気的に絶縁化することなく接地配線
を形成する光電変換装置の製造工程を示した。なお、第
8゜9図に示しだ装置には、最後の工程として光センサ
上に耐磨粍層を形成する工程を省略している。FIG. 8 shows a method for realizing the structure of the present invention, that is, a photoelectric conversion device in which a photoconductive film is formed by performing the above-described treatment using an It-Vl group compound, and a ground wiring is provided to the light-shielding film. The manufacturing process of the device is shown. FIG. 9 shows another method for realizing the structure of the present invention, that is, a manufacturing process of a photoelectric conversion device in which a ground wiring is formed on the exposed surface of the metal light-shielding film 80 without electrically insulating it during formation of the photoconductive film. . In the apparatus shown in FIG. 8-9, the final step of forming an abrasion-resistant layer on the optical sensor is omitted.
以下に、第8,9図の工程について説明する。The steps shown in FIGS. 8 and 9 will be explained below.
〔1〕 透光性絶縁基板7上に、遮光膜8としてCrを
真空蒸着し、照明窓12をホトエツチングで形成する〔
第8図(aン、第9図(a) )。[1] Cr is vacuum-deposited as the light-shielding film 8 on the transparent insulating substrate 7, and the illumination window 12 is formed by photo-etching.
Figure 8 (a), Figure 9 (a).
〔2〕 透明絶縁膜9として、ガラスをスパッター蒸着
する[第8図(b) ]、このとき前述したごとく光導
電素子形成時に露出しているCr遮光膜8に影響をおよ
ぼさないようにする場合は、遮光膜接地のだめの電極部
をあらかじめマスク2゜にてマスクしておくとよい〔第
9図(b)〕。[2] Glass is sputter-deposited as the transparent insulating film 9 [FIG. 8(b)], taking care not to affect the Cr light-shielding film 8 exposed during the formation of the photoconductive element as described above. In this case, it is advisable to mask the electrode portion of the grounded portion of the light-shielding film with a 2° mask in advance [FIG. 9(b)].
〔3〕シかるのち、前述しだ光電変換膜の製造方法によ
り光センサ10となる光導電素子を透明絶縁膜9上に選
択的に形成する〔第8図(C)、第9図(C) )。[3] After that, a photoconductive element that will become the optical sensor 10 is selectively formed on the transparent insulating film 9 using the method for manufacturing a photoelectric conversion film described above [FIGS. 8(C) and 9(C)] ) ).
〔4〕 遮光膜8接地のための電極部を設けるために、
ホトエツチングによって絶縁膜9の一部を取り去る〔第
8図(d) )、ただし、第9図の工程のように、あら
かじめマスクして接地のだめの電極を形成する部分に絶
縁膜をスパッター蒸着していない場合はその必要はない
。[4] In order to provide an electrode part for grounding the light shielding film 8,
A part of the insulating film 9 is removed by photo-etching (Fig. 8(d)); however, as in the process shown in Fig. 9, the insulating film is sputter-deposited on the part where the grounding electrode is to be formed by masking it in advance. If not, there is no need to do so.
〔6〕 リフトオフ法によって、光センサ10にNiC
r/Au電極11を形成すると同時に、遮光膜8の接地
のだめの電極18を形成する〔第8図(C)、第9図(
カ〕。[6] NiC is applied to the optical sensor 10 by the lift-off method.
At the same time as forming the r/Au electrode 11, a grounding electrode 18 of the light shielding film 8 is formed [FIG. 8(C), FIG. 9(
mosquito〕.
〔6〕 そしてマイクロシートガラス(図示せず)をパ
シベーションと耐磨粍を兼ねて光センサ上に接着する。[6] Then, a microsheet glass (not shown) is bonded onto the optical sensor for both passivation and abrasion resistance.
このように、前述したごとく、光導電膜を、■=Y族化
合物を■族ハロゲン雰囲気中で熱処理して形成する方法
(第8図)に比べ、アモルファスシリコン等を用いて露
出している金属膜表面を電気的に絶縁化させない不活性
な雰囲気中で光導電素子を形成する工程(第9図)を採
用すると、透明絶縁膜に遮光膜接地の電極部の窓開けの
工程が省略できるため、遮光膜を容易に接地できかつよ
り生産性の向上もはかれる。As described above, compared to the method of forming a photoconductive film by heat-treating the ■=Y group compound in a group ■ halogen atmosphere (Fig. 8), it is possible to form a photoconductive film by using amorphous silicon or the like to form an exposed metal film. By adopting the process of forming a photoconductive element in an inert atmosphere that does not electrically insulate the film surface (Figure 9), the process of opening a window in the transparent insulating film at the electrode part of the light-shielding film grounding can be omitted. , the light-shielding film can be easily grounded, and productivity can be further improved.
第3図に示したタイプの光電変換装置の遮光膜8を接地
した時の効果を第10図に示しだ。各光センサの定常状
態における出力は、光センサの感度に依存している。各
光センサの感度ばらつきがほとんどなくしかも光センサ
の下に遮光膜がない場合、一定照度の光を照射して10
kHz程度のパルス駆動では第10図(b)に示しだよ
うに出力はフラットである。しかし、光センサの下に遮
光膜がある場合上記と同様な条件で駆動すると、第10
図(−)に示したように最初の数ビットには、光センサ
の電極と遮光膜に存在する容量成分が重畳するだめ、本
来の光信号xシ高い出力を示す。FIG. 10 shows the effect when the light shielding film 8 of the photoelectric conversion device of the type shown in FIG. 3 is grounded. The steady state output of each optical sensor depends on the sensitivity of the optical sensor. If there is almost no variation in the sensitivity of each photosensor and there is no light shielding film under the photosensor, irradiation with light at a constant illuminance will cause
When pulsed at about kHz, the output is flat as shown in FIG. 10(b). However, if there is a light-shielding film under the optical sensor and it is driven under the same conditions as above, the 10th
As shown in the figure (-), the original optical signal x exhibits a high output because the capacitance components existing in the electrode of the optical sensor and the light-shielding film are superimposed on the first few bits.
そこで、本発明のごとく遮光膜8を接地すると、上記の
容量成分が除去でき、再び出力は第10図(b)に示し
たような光信号に忠実な出力信号が得られた。Therefore, by grounding the light shielding film 8 as in the present invention, the above-mentioned capacitance component could be removed, and an output signal faithful to the optical signal as shown in FIG. 10(b) could be obtained again.
発明の効果
本発明によれば、光センサ電極と遮光膜との間に生じる
容量成分を除去でき、光信号に忠実な出力信号を得ると
いう原稿の読み取9用等の光電変換装置にとって格別の
効果を発揮することができ、小型で高性能な光電変換装
置の実現に大きく寄与するものである。Effects of the Invention According to the present invention, the capacitance component generated between the optical sensor electrode and the light-shielding film can be removed, and an output signal faithful to the optical signal can be obtained, which is a special effect for a photoelectric conversion device for reading originals, etc. This will greatly contribute to the realization of compact, high-performance photoelectric conversion devices.
第1図はICイメージセンサを用いた場合のファクシミ
リ送信機の読み取υ系の概略図、第2図は原稿と1対1
に対応したイメージセンサを用いた場合のファクシミリ
送信機の読み取り系(光フアイバーアレイを使用するも
の)の概略図、第3図は原稿と1対1に対応したイメー
ジセンサを用いた場合のファクシミリ送信機の読み取り
系(元ファイバーアレ・l使用しないもの)の概略断面
図、第4図は第3図の構造を用いた光電変換装置の要部
断面図、第6図A 、 B 、 C(d、Cr遮光膜力
;ある場合の光センサの電圧応答の説明図、第6図は第
3図の装置における各光センサの信号入出力等価回路図
、第7図は本発明の一実施例の光電変換装置の一部拡大
図、第8図(a)〜(e)は光導電素子としてIt−V
l族化合物を用いる場合の本発明の一実MM例の光電変
換装置の製造工程断面図、第91QI (a)〜(d)
は低温形成できる光導電素子を用いる場合のA・発明の
他の実施例の光電変換装置の製造工程断面図、第10図
(a) l (b)は光電変換装置の出力1j=4j性
の比較を示す図である。
7・・・・・・透明絶縁基板、8・・・・・・遮光膜、
9・・・・・・透明絶縁膜、1o・・・・・・光センサ
、11・・・・・電極、12・・・・・・照明窓、13
・・・・・・透明面」磨耗層、14・・・・・1′↓荷
抵抗、16・・・・・・出力端、18・・・・・・接地
型(ψ(i′τIS1゜代理人の氏名 弁理士 中 尾
敏 男 ほか1名第1図
第2図
4 〆
第3図 ノ
第4図
第5図
σ ρlAS幻
第6図
ノ
第7図
第9図
72.7
第10図
6 ″ ′ ビ′1,7F N/。
taノ
j io /6 じ゛、v FIV。
ど2ノ
第1頁の続き
0発 明 者 山 上 登
0発 明 者 大 野 勝Figure 1 is a schematic diagram of the reading υ system of a facsimile transmitter when using an IC image sensor, and Figure 2 is a one-to-one diagram of the reading system of a facsimile transmitter using an IC image sensor.
A schematic diagram of the reading system of a facsimile transmitter (one that uses an optical fiber array) when using an image sensor compatible with Figure 4 is a cross-sectional view of the main parts of a photoelectric conversion device using the structure shown in Figure 3. , Cr light-shielding film force; An explanatory diagram of the voltage response of the optical sensor in a certain case, FIG. 6 is a signal input/output equivalent circuit diagram of each optical sensor in the device of FIG. 3, and FIG. 7 is an example of the present invention. Partially enlarged views of the photoelectric conversion device, FIGS. 8(a) to 8(e) show It-V as a photoconductive element.
Cross-sectional views of the manufacturing process of a photoelectric conversion device according to an MM example of the present invention when using a Group I compound, No. 91QI (a) to (d)
10(a) and 10(b) are cross-sectional views of the manufacturing process of a photoelectric conversion device according to another embodiment of the A/invention in which a photoconductive element that can be formed at a low temperature is used. It is a figure showing a comparison. 7... Transparent insulating substrate, 8... Light shielding film,
9... Transparent insulating film, 1o... Optical sensor, 11... Electrode, 12... Lighting window, 13
......transparent surface" wear layer, 14...1'↓load resistance, 16...output end, 18...ground type (ψ(i'τIS1゜Name of agent Patent attorney Toshio Nakao and one other person Figure 1 Figure 2 Figure 4 Figure 3 Figure 4 Figure 5 σ ρlAS Vision Figure 6 Figure 7 Figure 9 Figure 72.7 Figure 10 6 ″ ′ bi′1,7F N/. tanoji io /6 ji゛, v FIV. Continued from page 1 of 2 0 Inventor Noboru Yamagami 0 Inventor Masaru Ohno
Claims (1)
個の照明窓を有する遮光膜と、この遮光膜の上に形成さ
れ前記遮光膜を電気的に接地する電極部と、前記電極部
を除く遮光膜上に形成された透光性電気絶縁膜と、前記
絶縁膜上に主走査方向に形成された光導電素子と、この
光導電素子上に形成された電極とを備えたことを特徴と
する光電変換装置。 (卸 透光性絶縁基板上に遮光膜を形成する工程と、前
記透光膜上に透明絶縁膜を形成する工程と、前記絶縁膜
上に真空蒸着法で11−Vl化合物を蒸着し、融剤でろ
る11族のハロゲン化物の蒸気を含む雰囲気中で前記I
I −Vl族化合物と前記■族ハロゲン化物との共晶温
度以上の温度で熱処理を行って光導電素子を形成する工
程と、前記遮光膜の接地の電極部を設けるために前記透
明絶縁膜を選択的に除去し、前記遮光膜を一部露出させ
る工程と、前記光導電素子の電極形成と同時に前記遮光
膜の接地電極を形成する工程とを備えたことを特徴とす
る光電変換装置の製造方法。 (3)透光性絶縁基板上に遮光膜を形成する工程と、前
記遮光膜上に前記遮光膜を電気的に接地するための電極
部を除いて透明絶縁膜を形成する工程と、前記絶縁膜が
形成されていない前記遮光膜表面合一電気的に絶縁化さ
せないようにして前記P、It 11% 、1:に光導
電素子を形成する工程と、前記光導電素子の電極形成と
同時に前記遮光膜の接地型+@を形成する工程とを備え
だことを特徴とする)し電変換装置の製造方法。Scope of Claims: (1) A light-shielding film having a plurality of illumination windows arranged in the main scanning direction on a transparent insulating substrate, and a light-shielding film formed on the light-shielding film and electrically grounding the light-shielding film. a light-transmitting electrical insulating film formed on the light-shielding film excluding the electrode part, a photoconductive element formed on the insulating film in the main scanning direction, and a light-transmitting electric insulating film formed on the photoconductive element. What is claimed is: 1. A photoelectric conversion device comprising: an electrode; (Wholesale) A step of forming a light-shielding film on a light-transmitting insulating substrate, a step of forming a transparent insulating film on the light-transmitting film, and a step of depositing an 11-Vl compound on the insulating film by vacuum evaporation method, In an atmosphere containing a vapor of a Group 11 halide,
A step of forming a photoconductive element by performing heat treatment at a temperature higher than the eutectic temperature of the I-Vl group compound and the group II halide, and forming the transparent insulating film in order to provide a grounded electrode portion of the light shielding film. Manufacturing a photoelectric conversion device characterized by comprising a step of selectively removing the light shielding film to expose a portion of the light shielding film, and a step of forming a ground electrode of the light shielding film at the same time as forming an electrode of the photoconductive element. Method. (3) forming a light-shielding film on the light-transmitting insulating substrate; forming a transparent insulating film on the light-shielding film except for an electrode portion for electrically grounding the light-shielding film; and A step of forming a photoconductive element on the P, It 11%, 1: without electrically insulating the surface of the light-shielding film on which no film is formed, and simultaneously forming an electrode of the photoconductive element. 1. A method for manufacturing an electrical conversion device, characterized by comprising a step of forming a ground type +@ of a light shielding film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58222952A JPS60115259A (en) | 1983-11-26 | 1983-11-26 | Photoelectric conversion device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58222952A JPS60115259A (en) | 1983-11-26 | 1983-11-26 | Photoelectric conversion device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60115259A true JPS60115259A (en) | 1985-06-21 |
Family
ID=16790444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58222952A Pending JPS60115259A (en) | 1983-11-26 | 1983-11-26 | Photoelectric conversion device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60115259A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2600460A1 (en) * | 1986-06-20 | 1987-12-24 | Canon Kk | METHOD FOR CONTROLLING A PHOTODETECTOR |
US5097304A (en) * | 1986-10-07 | 1992-03-17 | Canon Kabushiki Kaisha | Image reading device with voltage biases |
US5128532A (en) * | 1986-10-07 | 1992-07-07 | Canon Kabushiki Kaisha | Image reading device having a conductive layer formed below a light receiving window |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5471593A (en) * | 1977-11-18 | 1979-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Production of photo sensor array |
JPS55149576A (en) * | 1979-05-11 | 1980-11-20 | Nippon Telegr & Teleph Corp <Ntt> | Photodetection sensor array unit |
JPS5778263A (en) * | 1980-11-04 | 1982-05-15 | Nippon Telegr & Teleph Corp <Ntt> | Adhesive type image sensor |
JPS5856363A (en) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | Light-receiving element |
JPS58125864A (en) * | 1982-01-22 | 1983-07-27 | Oki Electric Ind Co Ltd | Manufacture of line sensor |
JPS58162055A (en) * | 1982-03-23 | 1983-09-26 | Nec Corp | Thin film photoelectric converter |
-
1983
- 1983-11-26 JP JP58222952A patent/JPS60115259A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5471593A (en) * | 1977-11-18 | 1979-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Production of photo sensor array |
JPS55149576A (en) * | 1979-05-11 | 1980-11-20 | Nippon Telegr & Teleph Corp <Ntt> | Photodetection sensor array unit |
JPS5778263A (en) * | 1980-11-04 | 1982-05-15 | Nippon Telegr & Teleph Corp <Ntt> | Adhesive type image sensor |
JPS5856363A (en) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | Light-receiving element |
JPS58125864A (en) * | 1982-01-22 | 1983-07-27 | Oki Electric Ind Co Ltd | Manufacture of line sensor |
JPS58162055A (en) * | 1982-03-23 | 1983-09-26 | Nec Corp | Thin film photoelectric converter |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2600460A1 (en) * | 1986-06-20 | 1987-12-24 | Canon Kk | METHOD FOR CONTROLLING A PHOTODETECTOR |
US5097304A (en) * | 1986-10-07 | 1992-03-17 | Canon Kabushiki Kaisha | Image reading device with voltage biases |
US5128532A (en) * | 1986-10-07 | 1992-07-07 | Canon Kabushiki Kaisha | Image reading device having a conductive layer formed below a light receiving window |
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