JPS57130451A - Formation of multilayer wiring - Google Patents

Formation of multilayer wiring

Info

Publication number
JPS57130451A
JPS57130451A JP1708681A JP1708681A JPS57130451A JP S57130451 A JPS57130451 A JP S57130451A JP 1708681 A JP1708681 A JP 1708681A JP 1708681 A JP1708681 A JP 1708681A JP S57130451 A JPS57130451 A JP S57130451A
Authority
JP
Japan
Prior art keywords
wiring
film
hole
irradiated
constitute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1708681A
Other languages
Japanese (ja)
Inventor
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1708681A priority Critical patent/JPS57130451A/en
Publication of JPS57130451A publication Critical patent/JPS57130451A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To suppress generation of a hillock of wiring and to avoid disconnection at the through-hole part when a multilayer wiring of semiconductor device is to be formed by a method wherein a part of a lower layer metal wiring is covered with a dielectric film, and charged corpuscular rays or a laser beam is irradiated in an oxidizing atmosphere to oxidize the metal surface of the exposed part of wiring. CONSTITUTION:An oxide film 40 is made to be generated on an Si substrate 1, the Al wiring 81 of the prescribed pattern to constitute the lower layer wiring is formed thereon, and an SiO2 film or a P type SiN film 41 is provided on the part 11 to constitute a through-hole. Then the laser beam 10 having as much power to melt the surface layer part of the wiring 81 is irradiated on the whole surface exposing the surface in the oxygen atmosphere to make an Al<2>O3 film 94 to be generated on the surface layer part. After then, a dielectric film 41 covering the through-hole is removed, and an Al wiring 82 of the upper layer to come in contact with the wiring 81 through the through-hole part 11 is adhered extending over the films 94, 40.
JP1708681A 1981-02-06 1981-02-06 Formation of multilayer wiring Pending JPS57130451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1708681A JPS57130451A (en) 1981-02-06 1981-02-06 Formation of multilayer wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1708681A JPS57130451A (en) 1981-02-06 1981-02-06 Formation of multilayer wiring

Publications (1)

Publication Number Publication Date
JPS57130451A true JPS57130451A (en) 1982-08-12

Family

ID=11934167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1708681A Pending JPS57130451A (en) 1981-02-06 1981-02-06 Formation of multilayer wiring

Country Status (1)

Country Link
JP (1) JPS57130451A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605944A (en) * 1984-09-11 1986-08-12 Sanyo Electric Co., Ltd. LED array device for printer
US4942138A (en) * 1987-12-26 1990-07-17 Sharp Kabushiki Kaisha Ion-implantation of wiring electrodes of a semiconductor device for hillock reduction
JPH0637189A (en) * 1992-07-17 1994-02-10 Sharp Corp Manufacture of thin film element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605944A (en) * 1984-09-11 1986-08-12 Sanyo Electric Co., Ltd. LED array device for printer
US4942138A (en) * 1987-12-26 1990-07-17 Sharp Kabushiki Kaisha Ion-implantation of wiring electrodes of a semiconductor device for hillock reduction
JPH0637189A (en) * 1992-07-17 1994-02-10 Sharp Corp Manufacture of thin film element

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