JPS57130451A - Formation of multilayer wiring - Google Patents
Formation of multilayer wiringInfo
- Publication number
- JPS57130451A JPS57130451A JP1708681A JP1708681A JPS57130451A JP S57130451 A JPS57130451 A JP S57130451A JP 1708681 A JP1708681 A JP 1708681A JP 1708681 A JP1708681 A JP 1708681A JP S57130451 A JPS57130451 A JP S57130451A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- hole
- irradiated
- constitute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To suppress generation of a hillock of wiring and to avoid disconnection at the through-hole part when a multilayer wiring of semiconductor device is to be formed by a method wherein a part of a lower layer metal wiring is covered with a dielectric film, and charged corpuscular rays or a laser beam is irradiated in an oxidizing atmosphere to oxidize the metal surface of the exposed part of wiring. CONSTITUTION:An oxide film 40 is made to be generated on an Si substrate 1, the Al wiring 81 of the prescribed pattern to constitute the lower layer wiring is formed thereon, and an SiO2 film or a P type SiN film 41 is provided on the part 11 to constitute a through-hole. Then the laser beam 10 having as much power to melt the surface layer part of the wiring 81 is irradiated on the whole surface exposing the surface in the oxygen atmosphere to make an Al<2>O3 film 94 to be generated on the surface layer part. After then, a dielectric film 41 covering the through-hole is removed, and an Al wiring 82 of the upper layer to come in contact with the wiring 81 through the through-hole part 11 is adhered extending over the films 94, 40.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1708681A JPS57130451A (en) | 1981-02-06 | 1981-02-06 | Formation of multilayer wiring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1708681A JPS57130451A (en) | 1981-02-06 | 1981-02-06 | Formation of multilayer wiring |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57130451A true JPS57130451A (en) | 1982-08-12 |
Family
ID=11934167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1708681A Pending JPS57130451A (en) | 1981-02-06 | 1981-02-06 | Formation of multilayer wiring |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57130451A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4605944A (en) * | 1984-09-11 | 1986-08-12 | Sanyo Electric Co., Ltd. | LED array device for printer |
US4942138A (en) * | 1987-12-26 | 1990-07-17 | Sharp Kabushiki Kaisha | Ion-implantation of wiring electrodes of a semiconductor device for hillock reduction |
JPH0637189A (en) * | 1992-07-17 | 1994-02-10 | Sharp Corp | Manufacture of thin film element |
-
1981
- 1981-02-06 JP JP1708681A patent/JPS57130451A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4605944A (en) * | 1984-09-11 | 1986-08-12 | Sanyo Electric Co., Ltd. | LED array device for printer |
US4942138A (en) * | 1987-12-26 | 1990-07-17 | Sharp Kabushiki Kaisha | Ion-implantation of wiring electrodes of a semiconductor device for hillock reduction |
JPH0637189A (en) * | 1992-07-17 | 1994-02-10 | Sharp Corp | Manufacture of thin film element |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5548926A (en) | Preparation of semiconductor device | |
JPS57155726A (en) | Manufacture of semiconductor device | |
JPS57130451A (en) | Formation of multilayer wiring | |
JPS57130450A (en) | Formation of multilayer wiring | |
JPS57107040A (en) | Manufacture of semiconductor device | |
JPS5745288A (en) | Thin film photo diode | |
JPS5270762A (en) | Electrode formation method of semiconductor element | |
JPS5739534A (en) | Manufacture of semiconductor device | |
JPS559415A (en) | Semiconductor manufacturing method | |
JPS566434A (en) | Manufacture of semiconductor device | |
JPS5513945A (en) | Amorphous semiconductor device | |
JPS57136366A (en) | Manufacture of semiconductor device | |
JPS5730346A (en) | Semiconductor device | |
JPS5792849A (en) | Manufacture of semiconductor device | |
JPS5513995A (en) | Method of producing a semiconductor device | |
JPS57122534A (en) | Manufacture of semiconductor device | |
JPS5762543A (en) | Manufacture of semiconductor device | |
JPS56134748A (en) | Manufacture of semiconductor device | |
JPS571244A (en) | Semiconductor device | |
JPS5762542A (en) | Manufacture of semiconductor device | |
JPS5723230A (en) | Manufacture of semiconductor device | |
JPS57202756A (en) | Manufacture of semiconductor device | |
JPS5690539A (en) | Production of semiconductor device | |
JPS56110229A (en) | Manufacture of semiconductor device | |
JPS56134749A (en) | Manufacture of semiconductor device |