JPS5730346A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5730346A JPS5730346A JP10531280A JP10531280A JPS5730346A JP S5730346 A JPS5730346 A JP S5730346A JP 10531280 A JP10531280 A JP 10531280A JP 10531280 A JP10531280 A JP 10531280A JP S5730346 A JPS5730346 A JP S5730346A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- overall surface
- metallic layer
- layer
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Non-Volatile Memory (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To completely eliminate an optical leakage current in a semiconductor device by forming a metallic layer on the overall surface of the device to approximately completely shield the light, and thus reducing the light reaching the interior of a semiconductor substrate even if the external light is emitted to the surface of a semiconductor integrated circuit to the possible minimum. CONSTITUTION:An aluminum layer 19 is formed on a substrate 18, and is removed at the unnecessary parts in accordance with the pattern of a resist 20. Subsequently, the pattern edge of the aluminum is oxidized by an anodic oxidization method or the like to form an oxidized aluminum layer 21. Then, the second metallic layer 22 is formed on the overall surface, and the resist 30 is removed by a lift-off method. Since alumina is interposed as an insulator between the metallic layers 19 and 22 in this manner, no shortcircuit occurs between wires, but a structure in which the metallic layer is covered on the overall surface of the semiconductor device can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10531280A JPS5730346A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10531280A JPS5730346A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5730346A true JPS5730346A (en) | 1982-02-18 |
Family
ID=14404179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10531280A Pending JPS5730346A (en) | 1980-07-31 | 1980-07-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5730346A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5945771A (en) * | 1982-09-09 | 1984-03-14 | Sony Corp | Method for converting video signal |
-
1980
- 1980-07-31 JP JP10531280A patent/JPS5730346A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5945771A (en) * | 1982-09-09 | 1984-03-14 | Sony Corp | Method for converting video signal |
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