JPS5730346A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5730346A
JPS5730346A JP10531280A JP10531280A JPS5730346A JP S5730346 A JPS5730346 A JP S5730346A JP 10531280 A JP10531280 A JP 10531280A JP 10531280 A JP10531280 A JP 10531280A JP S5730346 A JPS5730346 A JP S5730346A
Authority
JP
Japan
Prior art keywords
semiconductor device
overall surface
metallic layer
layer
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10531280A
Other languages
Japanese (ja)
Inventor
Hiroyuki Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP10531280A priority Critical patent/JPS5730346A/en
Publication of JPS5730346A publication Critical patent/JPS5730346A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Non-Volatile Memory (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To completely eliminate an optical leakage current in a semiconductor device by forming a metallic layer on the overall surface of the device to approximately completely shield the light, and thus reducing the light reaching the interior of a semiconductor substrate even if the external light is emitted to the surface of a semiconductor integrated circuit to the possible minimum. CONSTITUTION:An aluminum layer 19 is formed on a substrate 18, and is removed at the unnecessary parts in accordance with the pattern of a resist 20. Subsequently, the pattern edge of the aluminum is oxidized by an anodic oxidization method or the like to form an oxidized aluminum layer 21. Then, the second metallic layer 22 is formed on the overall surface, and the resist 30 is removed by a lift-off method. Since alumina is interposed as an insulator between the metallic layers 19 and 22 in this manner, no shortcircuit occurs between wires, but a structure in which the metallic layer is covered on the overall surface of the semiconductor device can be obtained.
JP10531280A 1980-07-31 1980-07-31 Semiconductor device Pending JPS5730346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10531280A JPS5730346A (en) 1980-07-31 1980-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10531280A JPS5730346A (en) 1980-07-31 1980-07-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5730346A true JPS5730346A (en) 1982-02-18

Family

ID=14404179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10531280A Pending JPS5730346A (en) 1980-07-31 1980-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5730346A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945771A (en) * 1982-09-09 1984-03-14 Sony Corp Method for converting video signal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945771A (en) * 1982-09-09 1984-03-14 Sony Corp Method for converting video signal

Similar Documents

Publication Publication Date Title
KR930024138A (en) Electronic circuits and fabrication methods thereof
JPS56150871A (en) Semiconductor device
JPS5730346A (en) Semiconductor device
JPS5562764A (en) Semiconductor device
JPS5633891A (en) Light emitting semiconductor device
JPS57130451A (en) Formation of multilayer wiring
EP0396276A3 (en) Method of manufacturing semiconductor device
JPS5568655A (en) Manufacturing method of wiring
JPS56148846A (en) Manufacture of circuit pattern
JPS5368184A (en) Formation method of multilayer wiring structure
JPS57130450A (en) Formation of multilayer wiring
DE69025939D1 (en) APPARATUS AND METHOD FOR PRODUCING A STORAGE CELL WITH FLOATING GATE AND DOUBLE DIELECTRIC LAYER
JPS5723230A (en) Manufacture of semiconductor device
JPS57206059A (en) Laser trimming method for hybrid integrated circuit
JPS56134749A (en) Manufacture of semiconductor device
JPS5270762A (en) Electrode formation method of semiconductor element
JPS5723224A (en) Manufacture of semiconductor integrated circuit
JPS56123879A (en) Thick film circuit substrate
JPS5718354A (en) Semiconductor integrated circuit
JPS56134748A (en) Manufacture of semiconductor device
JPS5785247A (en) Formation of fetch electrode
JPS575366A (en) Semiconductor device and manufacture thereof
JPS55118653A (en) Semiconductor device
JPS56162831A (en) Forming method for electrode and wiring layer
JPS56160052A (en) Semiconductor device