JPS5723230A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5723230A JPS5723230A JP9839180A JP9839180A JPS5723230A JP S5723230 A JPS5723230 A JP S5723230A JP 9839180 A JP9839180 A JP 9839180A JP 9839180 A JP9839180 A JP 9839180A JP S5723230 A JPS5723230 A JP S5723230A
- Authority
- JP
- Japan
- Prior art keywords
- gap
- substrate
- conductor layer
- constitution
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To prevent generation of caves when a conductor layer and an insulating layer are to be formed covering the surface of an Si substrate mutually complementally by a method wherein a gap between the conductor layer and the insulating layer is covered by oxidation of the surface of the conductor layer. CONSTITUTION:To form an Al wiring 5' favorably at an opening part of the SiO2 film 2 on the Si substrate 1 by the lift off technique, it is necessary to form eaves part at the opening part of an etching mask for the SiO2 film. Therefore when the mask is removed, the gap is generated inevitably. The substrate being finished with patterning is boiled in water, and an Al2O3 film is made to be formed on the surface of the Al to cover the gap. When the gap is covered by this constitution, no cave is generated inside when PSG, etc., is to be laminted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9839180A JPS5723230A (en) | 1980-07-18 | 1980-07-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9839180A JPS5723230A (en) | 1980-07-18 | 1980-07-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5723230A true JPS5723230A (en) | 1982-02-06 |
Family
ID=14218538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9839180A Pending JPS5723230A (en) | 1980-07-18 | 1980-07-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723230A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60256418A (en) * | 1984-05-31 | 1985-12-18 | 三菱電機株式会社 | Rice cooker |
-
1980
- 1980-07-18 JP JP9839180A patent/JPS5723230A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60256418A (en) * | 1984-05-31 | 1985-12-18 | 三菱電機株式会社 | Rice cooker |
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