JPS5739534A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5739534A
JPS5739534A JP11503180A JP11503180A JPS5739534A JP S5739534 A JPS5739534 A JP S5739534A JP 11503180 A JP11503180 A JP 11503180A JP 11503180 A JP11503180 A JP 11503180A JP S5739534 A JPS5739534 A JP S5739534A
Authority
JP
Japan
Prior art keywords
laser beam
aperture
layer
liquid crystal
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11503180A
Other languages
Japanese (ja)
Inventor
Wakao Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11503180A priority Critical patent/JPS5739534A/en
Publication of JPS5739534A publication Critical patent/JPS5739534A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To provide a liquid crystal driving semiconductor device which is prevented from optical leakage, by a method wherein patterning of a metal layer provided for optical shielding is operated by laser beam so that an aperture area is made minimum. CONSTITUTION:After a P<+> diffusion layer 22, a field oxide film 23 and a gate oxide film 24 are formed on a P type single crystal silicone substrate 21, a polycrystalline silicone layer 25 is formed. Then an N<+> diffusion layer 26, which is to become source and drain, is formed, a layer, insulation film 27 is formed and an aperture as a contact hole is made. The surface is covered with Al or Al-alloy overall. Then Al or Al-alloy is patterned to the prescribed pattern by laser beam so that a video signal line wiring 28 and a liquid crystal driving electrode 29 are formed. Because the laser beam can be focused to a small diameter, the area of the aperture can be minimum so that the optical leakage current can be eliminated.
JP11503180A 1980-08-21 1980-08-21 Manufacture of semiconductor device Pending JPS5739534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11503180A JPS5739534A (en) 1980-08-21 1980-08-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11503180A JPS5739534A (en) 1980-08-21 1980-08-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5739534A true JPS5739534A (en) 1982-03-04

Family

ID=14652494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11503180A Pending JPS5739534A (en) 1980-08-21 1980-08-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5739534A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053526A (en) * 2006-08-25 2008-03-06 Semiconductor Energy Lab Co Ltd Fabricating method of semiconductor device
JP2008078634A (en) * 2006-08-25 2008-04-03 Semiconductor Energy Lab Co Ltd Method of producing semiconductor device
US9803312B2 (en) 2012-11-21 2017-10-31 Lg Electronics Inc. Dryer with heat pump

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053526A (en) * 2006-08-25 2008-03-06 Semiconductor Energy Lab Co Ltd Fabricating method of semiconductor device
JP2008078634A (en) * 2006-08-25 2008-04-03 Semiconductor Energy Lab Co Ltd Method of producing semiconductor device
US9803312B2 (en) 2012-11-21 2017-10-31 Lg Electronics Inc. Dryer with heat pump

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