JPS5513945A - Amorphous semiconductor device - Google Patents

Amorphous semiconductor device

Info

Publication number
JPS5513945A
JPS5513945A JP8697478A JP8697478A JPS5513945A JP S5513945 A JPS5513945 A JP S5513945A JP 8697478 A JP8697478 A JP 8697478A JP 8697478 A JP8697478 A JP 8697478A JP S5513945 A JPS5513945 A JP S5513945A
Authority
JP
Japan
Prior art keywords
film
thin film
metalic
wiring
concave portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8697478A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8697478A priority Critical patent/JPS5513945A/en
Publication of JPS5513945A publication Critical patent/JPS5513945A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To easily establish reduction of the wiring width by utilizing an amorphous material for the wiring for interconnecting between the elements provided in an integrated circuit.
CONSTITUTION: A concave portion is formed on the surface of a semiconductor substrate 201, a metalic film made of Mo is covered over the full surface to take a contact with the substrate 201, the metalic film is left as a thin film 202 only in the one side wall of the concave portion and the remainding is removed. Successively, an armophous material film is formed over the full surface, a laser beam is irradiated directly to the film or through a photomask to turn the film into the thin film 203 having a metalic conductivity and the thin film 204 having an insulation property. According to such a method, a conversion of a phase is occurred by irradiating the light to the amorphous material, the thin film 203 is caused to make a contact with the Mo thin film 202 and the thin film 204 having the insulating property is buried in the other side wall. Therefore, the miniturization of the wiring can be easily established and the disconnection be prevented if the stepping may be caused.
COPYRIGHT: (C)1980,JPO&Japio
JP8697478A 1978-07-17 1978-07-17 Amorphous semiconductor device Pending JPS5513945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8697478A JPS5513945A (en) 1978-07-17 1978-07-17 Amorphous semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8697478A JPS5513945A (en) 1978-07-17 1978-07-17 Amorphous semiconductor device

Publications (1)

Publication Number Publication Date
JPS5513945A true JPS5513945A (en) 1980-01-31

Family

ID=13901836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8697478A Pending JPS5513945A (en) 1978-07-17 1978-07-17 Amorphous semiconductor device

Country Status (1)

Country Link
JP (1) JPS5513945A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019240455A1 (en) * 2018-06-15 2019-12-19 주식회사 엘지화학 Method for manufacturing amorphous thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019240455A1 (en) * 2018-06-15 2019-12-19 주식회사 엘지화학 Method for manufacturing amorphous thin film
US11680311B2 (en) 2018-06-15 2023-06-20 Lg Chem, Ltd. Method for producing amorphous thin film

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