JPS5513945A - Amorphous semiconductor device - Google Patents
Amorphous semiconductor deviceInfo
- Publication number
- JPS5513945A JPS5513945A JP8697478A JP8697478A JPS5513945A JP S5513945 A JPS5513945 A JP S5513945A JP 8697478 A JP8697478 A JP 8697478A JP 8697478 A JP8697478 A JP 8697478A JP S5513945 A JPS5513945 A JP S5513945A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- metalic
- wiring
- concave portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To easily establish reduction of the wiring width by utilizing an amorphous material for the wiring for interconnecting between the elements provided in an integrated circuit.
CONSTITUTION: A concave portion is formed on the surface of a semiconductor substrate 201, a metalic film made of Mo is covered over the full surface to take a contact with the substrate 201, the metalic film is left as a thin film 202 only in the one side wall of the concave portion and the remainding is removed. Successively, an armophous material film is formed over the full surface, a laser beam is irradiated directly to the film or through a photomask to turn the film into the thin film 203 having a metalic conductivity and the thin film 204 having an insulation property. According to such a method, a conversion of a phase is occurred by irradiating the light to the amorphous material, the thin film 203 is caused to make a contact with the Mo thin film 202 and the thin film 204 having the insulating property is buried in the other side wall. Therefore, the miniturization of the wiring can be easily established and the disconnection be prevented if the stepping may be caused.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8697478A JPS5513945A (en) | 1978-07-17 | 1978-07-17 | Amorphous semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8697478A JPS5513945A (en) | 1978-07-17 | 1978-07-17 | Amorphous semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5513945A true JPS5513945A (en) | 1980-01-31 |
Family
ID=13901836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8697478A Pending JPS5513945A (en) | 1978-07-17 | 1978-07-17 | Amorphous semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5513945A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019240455A1 (en) * | 2018-06-15 | 2019-12-19 | 주식회사 엘지화학 | Method for manufacturing amorphous thin film |
-
1978
- 1978-07-17 JP JP8697478A patent/JPS5513945A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019240455A1 (en) * | 2018-06-15 | 2019-12-19 | 주식회사 엘지화학 | Method for manufacturing amorphous thin film |
US11680311B2 (en) | 2018-06-15 | 2023-06-20 | Lg Chem, Ltd. | Method for producing amorphous thin film |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5519857A (en) | Semiconductor | |
JPS56160050A (en) | Semiconductor device and manufacture thereof | |
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
JPS5365088A (en) | Semiconductor device | |
JPS5513945A (en) | Amorphous semiconductor device | |
JPS5559741A (en) | Preparation of semiconductor device | |
JPS52131484A (en) | Semiconductor device | |
JPS5437472A (en) | Manufacture of semiconductor | |
JPS5299085A (en) | Production of semiconductor device | |
JPS534469A (en) | Semiconductor device | |
JPS57130451A (en) | Formation of multilayer wiring | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS5661175A (en) | Thin-film solar cell | |
JPS546767A (en) | Manufacture of semiconductor device | |
JPS56130916A (en) | Manufacture of semiconductor device | |
JPS566434A (en) | Manufacture of semiconductor device | |
JPS5242379A (en) | Method of inspecting pinholes of insulating film formed on semiconduct or surface | |
JPS54139486A (en) | Manufacture of semiconductor device | |
JPS57130450A (en) | Formation of multilayer wiring | |
JPS5683940A (en) | Manufacturing of semiconductor device | |
JPS5513994A (en) | Integrated circuit device | |
JPS5428566A (en) | Manufacture of semiconductor device | |
JPS5516495A (en) | Semiconductor device | |
JPS52113184A (en) | Semiconductor integrated circuit | |
JPS5331966A (en) | Production of semiconductor device |